Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures

We report the experimental investigation of bipolar resistive switching with "table with legs" shaped hysteresis switching loops in epitaxial perovskite GdBaCo O /LaNiO bilayers deposited by pulsed laser deposition. The possibility of varying the resistivity of GdBaCo O by changing its oxygen content allowed engineering this perovskite heterostructure with controlled interfaces creating two symmetric junctions. It has been proved that the resistance state of the device can be reproducibly varied by both continuous voltage sweeps and by electrical pulses. The symmetric devices show slightly non-symmetric resistance profiles, which can be explained by a valence change resistive switching model, and presented promising multilevel properties required for novel memories and neuromorphic computing

Interface-type resistive switching in perovskite materials

International audienc

How do the electrodes affect the electrical response of a M/La2NiO4/M memristive device?

session: Processing and Others (ED7.8.02)International audienc

Interface-type Resistive Switching in double-perovskite GdBaCo2O5+δ thin film devices

International audienc

Role of the electrodes on the electrical characteristics of La2NiO4-based memristive devices

International audienc

Resistive Switching in GbBaCo2O5?/LaNiO3 perovskite thin film devices

Session poster (R.P1.42)International audienc

Coexistence of ferroelectric and relaxor states in Ba2PrxNd1-xFeNb4O15

We have investigated the dielectric response of Ba2PrxNd1-xFeNb4O15 ceramics (x = 0, 0.2, 0.5, 0.6, 0.8, 1) in the frequency range from 20 Hz to 1 GHz. The obtained results confirmed the continuous transformation from the ferroelectric behavior of Ba2NdFeNb4O15 to the pure relaxor response of Ba2PrFeNb4O15 with increasing x. For intermediate x values, coexisting ferroelectric transition and relaxor dielectric signatures were observed, corresponding to two different phenomena in the framework of these materials. Increasing the amount of Pr decreases the ferroelectric phase transition temperatures in these ceramics; a large cooling??heating hysteresis exceeding 50K was also observed

Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures

We report the experimental investigation of bipolar resistive switching with "table with legs" shaped hysteresis switching loops in epitaxial perovskite GdBaCo O /LaNiO bilayers deposited by pulsed laser deposition. The possibility of varying the resistivity of GdBaCo O by changing its oxygen content allowed engineering this perovskite heterostructure with controlled interfaces creating two symmetric junctions. It has been proved that the resistance state of the device can be reproducibly varied by both continuous voltage sweeps and by electrical pulses. The symmetric devices show slightly non-symmetric resistance profiles, which can be explained by a valence change resistive switching model, and presented promising multilevel properties required for novel memories and neuromorphic computing

Interface-type Resistive Switching in epitaxial GdBaCo2O5+δ thin film heterostructures

International audienc

Superposition of interface and volume type resistive switching in perovskite nanoionic devices

The microelectronics industry is currently searching for reliable redox-based resistive switching (RS) memories which are filament-free, scale with the electrode size and do not require a high voltage electroforming step. Interface and volume type switching devices are the most promising memristors to achieve these challenging requirements, both for ReRAM (Resistive Random-Access Memories) non-volatile memory and neuromorphic computing applications. Here RS was investigated for the first time in nanoionic memristors based on GdBaCoO (GBCO), an oxide with high oxygen mobility. Non-filamentary and non-volatile reproducible RS was obtained when GBCO is sandwiched between Ag and LaNiO (LNO) electrodes. The observed bipolar RS could be successfully induced both by voltage sweeps and by pulses, showing asymmetric clock-wise hysteretic R(V) characteristics at room temperature. The temperature dependence of two independent devices in high and low resistance states (HRS and LRS) revealed a gradual decrease of the resistance difference between the two states on cooling from room temperature to 150 K and its increase below 100 K. Similarly, the R(V) switching curves obtained at low temperature showed the disappearance of the hysteresis at 150 K and its reappearance at lower temperatures. The superposition of volume and interface type RS mechanisms have proven to be responsible for the observed non-volatile change of the remnant resistance. The volume-type RS was related to the variation of the GBCO resistivity due to a change in oxygen content. The interface-type RS, on the other hand, was associated to the created electronic and ionic conduction barrier between GBCO and the LNO bottom electrode