329 research outputs found
A new power MEMS component with variable capacitance
Autonomous devices such as wireless sensors and sensor networks need a long battery lifetime in a small volume. Incorporating micro-power generators based on ambient energy increases the lifetime of these systems while reducing the volume. This paper describes a new approach to the conversion of mechanical energy, available in vibrations, to electrical energy. The conversion principle is based on charge transportation between two parallel capacitors. An electret is used to polarize the device. A large-signal model was developed, allowing simulations of the behavior of the generator. A small-signal model was then derived in order to quantify the output power as a function of the design parameters. These models show the possibility of generating up to 40 muW with a device of 10 mm 2. A layout was made based on a standard SOI-technology, available in an MPW. With this design a power of 1 muW at 1020 Hz is expected
Reentrant behavior in the superconducting phase-dependent resistance of a disordered 2-dimensional electron gas
We have investigated the bias-voltage dependence of the phase-dependent
differential resistance of a disordered T-shaped 2-dimensional electron gas
coupled to two superconducting terminals. The resistance oscillations first
increase upon lowering the energy. For bias voltages below the Thouless energy,
the resistance oscillations are suppressed and disappear almost completely at
zero bias voltage. We find a qualitative agreement with the calculated
reentrant behavior of the resistance and discuss quantitative deviations.Comment: 4 pages, 5 figures, to be published in Phys. Rev.
A Temperature Analysis of High-power AlGaN/GaN HEMTs
Galliumnitride has become a strategic superior material for space, defense
and civil applications, primarily for power amplification at RF and mm-wave
frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an
outstanding performance combined together with low cost and high flexibility
can be obtained using a System-in-a-Package (SIP) approach. Since thermal
management is extremely important for these high power applications, a hybrid
integration of the HEMT onto an AlN carrier substrate is proposed. In this
study we investigate the temperature performance for AlGaN/GaN HEMTs integrated
onto AlN using flip-chip mounting. Therefore, we use thermal simulations in
combination with experimental results using micro-Raman spectroscopy and
electrical dc-analysis.Comment: Submitted on behalf of TIMA Editions
(http://irevues.inist.fr/tima-editions
Critical currents in ballistic two-dimensional InAs-based superconducting weak links
The critical supercurrent Ic carried by a short (0.3 to 0.8 µm) ballistic two-dimensional InAs-based electron gas between superconducting niobium electrodes is studied. In relating the maximum value to the resistance of the weak link in the normal state Rn a much lower value is found than theoretically expected for a ballistic system. The energy scale which characterizes the observed temperature dependence is comparable to the energy associated with the product of Ic and Rn. We point out that although the transport between the electrodes is ballistic, in the InAs underneath the superconducting electrodes the transport is diffusive, an experimental case which has not yet been studied theoretically
Energy spectroscopy of Andreev levels between two superconductors
We perform energy spectroscopy of Andreev reflection processes occurring at two superconducting electrodes connected in series via a ballistic two-dimensional channel, by measuring the voltage dependence of the part of the conductance which is modulated by the macroscopic phase difference. The modulation amplitude oscillates as a function of energy and the phase exhibits an abrupt shift close to π at the energy for which the amplitude is minimum. We discuss how our findings are related to the properties of bound states formed between the two superconductors.
Andreev reflection at high magnetic fields: Evidence for electron and hole transport in edge states
We have studied magnetotransport in arrays of niobium filled grooves in an
InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter
the quantum Hall regime. In the superconducting state, we observe strong
magnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haas
oscillations by a factor of about two, when normalized to the background.
Additionally, we find that above a geometry-dependent magnetic field value the
sample in the superconducting state has a higher longitudinal resistance than
in the normal state. Both observations can be explained with edge channels
populated with electrons and Andreev reflected holes.Comment: accepted for Phys Rev Lett, some changes to tex
Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode
We demonstrate highly efficient spin injection at low and room temperature in
an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin
injector. We use a double-step oxide deposition for the fabrication of a
pinhole-free AlOx tunnel barrier. The measurements of the circular polarization
of the electroluminescence in the Oblique Hanle Effect geometry reveal injected
spin polarizations of at least 24% at 80K and 12% at room temperature
Strongly reduced bias dependence in spin-tunnel junctions obtained by ultraviolet light assisted oxidation
For future implementation of ferromagnetic tunnel junctions, we need a better understanding of the influence of the insulating barrier preparation method on the junction resistance, tunnel magnetoresistance (TMR), and its voltage bias dependence. In this letter, we focus on the bias dependence of junctions (Co-Al2O3-Ni80Fe20) prepared by ultraviolet light assisted in situ oxidation in an O-2 ambient. For an initial Al thickness of 1.3 nm, the resistance times area product of the junctions is 60 k Omega mu m(2), while showing up to 20% TMR at 5 mV bias. The decrease of TMR with bias voltage up to 1 V is remarkably small leading to V-1/2, for which half of the low-bias TMR remains, well over 0.6 V. (C) 2000 American Institute of Physics. [S0003-6951(00)02908-9]
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