Electric field driven donor-based charge qubits in semiconductors

We investigate theoretically donor-based charge qubit operation driven by external electric fields. The basic physics of the problem is presented by considering a single electron bound to a shallow-donor pair in GaAs: This system is closely related to the homopolar molecular ion H_2^+. In the case of Si, heteropolar configurations such as PSb^+ pairs are also considered. For both homopolar and heteropolar pairs, the multivalley conduction band structure of Si leads to short-period oscillations of the tunnel-coupling strength as a function of the inter-donor relative position. However, for any fixed donor configuration, the response of the bound electron to a uniform electric field in Si is qualitatively very similar to the GaAs case, with no valley quantum interference-related effects, leading to the conclusion that electric field driven coherent manipulation of donor-based charge qubits is feasible in semiconductors

Effects of two dimensional plasmons on the tunneling density of states

We show that gapless plasmons lead to a universal $(\delta\nu(\epsilon)/\nu\propto |\epsilon|/E_F)$ correction to the tunneling density of states of a clean two dimensional Coulomb interacting electron gas. We also discuss a counterpart of this effect in the "composite fermion metal" which forms in the presence of a quantizing perpendicular magnetic field corresponding to the half-filled Landau level. We argue that the latter phenomenon might be relevant for deviations from a simple scaling observed by A.Chang et al in the tunneling $I-V$ characteristics of Quantum Hall liquids.Comment: 12 pages, Latex, NORDITA repor

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.Comment: Minor Revisions. To appear in Phys. Rev. Let

Ferromagnetic and random spin ordering in diluted magnetic semiconductors

In a diluted magnetic semiconductor system, the exchange interaction between magnetic impurities has two independent components: a direct antiferromagnetic interaction and a ferromagnetic interaction mediated by charge carriers. Depending on the system parameters, the ground state of the system may be ordered either ferromagnetically or randomly. In this paper we use percolation theory to find the ferromagnetic transition temperature and the location of the quantum critical point separating the ferromagnetic phase and a valence bond glass phase.Comment: 9 pages, 2 figures, a reference adde

Correlation induced phonon softening in low density coupled bilayer systems

We predict a possible phonon softening instability in strongly correlated coupled semiconductor bilayer systems. By studying the plasmon-phonon coupling in coupled bilayer structures, we find that the renormalized acoustic phonon frequency may be softened at a finite wave vector due to many-body local field corrections, particularly in low density systems where correlation effects are strong. We discuss experimental possibilities to search for this predicted phonon softening phenomenon.Comment: 4 pages with 2 figure

Carrier relaxation due to electron-electron interaction in coupled double quantum well structures

We calculate the electron-electron interaction induced energy-dependent inelastic carrier relaxation rate in doped semiconductor coupled double quantum well nanostructures within the two subband approximation at zero temperature. In particular, we calculate, using many-body theory, the imaginary part of the full self-energy matrix by expanding in the dynamically RPA screened Coulomb interaction, obtaining the intrasubband and intersubband electron relaxation rates in the ground and excited subbands as a function of electron energy. We separate out the single particle and the collective excitation contributions, and comment on the effects of structural asymmetry in the quantum well on the relaxation rate. Effects of dynamical screening and Fermi statistics are automatically included in our many body formalism rather than being incorporated in an ad-hoc manner as one must do in the Boltzman theory.Comment: 26 pages, 5 figure

Estimates of electronic interaction parameters for LaMMO3_3 compounds (MM=Ti-Ni) from ab-initio approaches

We have analyzed the ab-initio local density approximation band structure calculations for the family of perovskite oxides, La$M$O$_3$ with $M$=Ti-Ni within a parametrized nearest neighbor tight-binding model and extracted various interaction strengths. We study the systematics in these interaction parameters across the transition metal series and discuss the relevance of these in a many-body description of these oxides. The results obtained here compare well with estimates of these parameters obtained via analysis of electron spectroscopic results in conjunction with the Anderson impurity model. The dependence of the hopping interaction strength, t, is found to be approximately $r^{-3}$.Comment: 18 pages; 1 tex file+9 postscript files (appeared in Phys Rev B Oct 15,1996

Regge behaviour of distribution functions and t and x-evolutions of gluon distribution function at low-x

In this paper t and x-evolutions of gluon distribution function from Dokshitzer-Gribov-Lipatov-Altarelli-Parisi(DGLAP) evolution equation in leading order(LO) at low-x, assuming the Regge behaviour of quark and gluon at this limit, are presented. We compare our results of gluon distribution function with MRST 2001, MRST 2004 and GRV '98 parameterizations and show the compatibility of Regge behaviour of quark and gluon distribution functions with perturbative quantum chromodynamics(PQCD) at low-x. We also discuss the limitations of Taylor series expansion method used earlier to solve DGLAP evolution equations, in the Regge behaviour of distribution functions.Comment: 19 pages, 7 figure

Measuring the condensate fraction of rapidly rotating trapped boson systems: off-diagonal order from the density

We demonstrate a direct connection between the density profile of a system of ultra-cold trapped bosonic particles in the rapid-rotation limit and its condensate fraction. This connection can be used to probe the crossover from condensed vortex-lattice states to uncondensed quantum fluid states that occurs in rapidly rotating boson systems as the particle density decreases or the rotation frequency increases. We illustrate our proposal with a series of examples, including ones based on models of realistic finite trap systems, and comment on its application to freely expanding boson density profile measurements.Comment: 4 pages, 3 figures, version accepted for publication in Phys. Rev. Let

Decay-Time Asymmetries at the B-Factories

Absract (Invited talk at the X DAE High Energy Physics symposium in December 1992, held at Tata Institute of Fundamental Research, Bombay)Comment: 20pages, TIFR/TH/93-1