Weak antilocalization in quantum wells in tilted magnetic fields

Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the quantum well plane. Spin and phase relaxation times are found as functions of temperature and parallel field. It is demonstrated that spin dephasing is due to the Dresselhaus spin-orbit interaction. The values of electron spin splittings and spin relaxation times are found in the wide range of 2D density. Application of in-plane field is shown to destroy weak antilocalization due to competition of Zeeman and microroughness effects. Their relative contributions are separated, and the values of the in-plane electron g-factor and characteristic size of interface imperfections are found.Comment: 8 pages, 8 figure

Role of doped layers in dephasing of 2D electrons in quantum well structures

The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in quantum well and to saturation of the phase breaking time at low temperature.Comment: 4 pages, 6 figure

Light emission and spin-polarised hole injection in InAs/GaAs quantum dot heterostructures with Schottky contact

EPL draftWe demonstrate the feasibility to obtain electroluminescence (EL), up to room temperature, from InGaAs self-assembled quantum dots (QDs) included in a forward-biased Schottky diode. Moreover, using a ferromagnet (FM) as the contact layer, sizable circular polarization of the EL emission in the presence of an external magnetic eld is obtained. A resonant behav- ior of the degree of circular polarization (P) as a function of applied voltage (V ), for a given value of magnetic eld, is observed. We explain our ndings using a model including tunneling of (spin-polarised) holes through the metal-semiconductor interface, transport in the near surface region of the heterostructure and out-of-equilibrium statistics of the injected carriers occupying the available states in the QD heterostructure. In particular, the resonant P(V ) dependence is related to the splitting of the qusi-Fermi level for two spin orientations in the FM.FCT, Portugal (project POCI/FIS/58524/2004), the RFBR, Russia (grant 10-02- 00501), MEC (grants MAT2008-01555, QOIT-CSD2006- 00019) and CAM (S-2009/ESP-1503) (Spain)

Giant suppression of the Drude conductivity due to quantum interference in disordered two-dimensional systems

Temperature and magnetic field dependences of the conductivity in heavily doped, strongly disordered two-dimensional quantum well structures GaAs/In$_x$Ga$_{1-x}$As/GaAs are investigated within wide conductivity and temperature ranges. Role of the interference in the electron transport is studied in the regimes when the phase breaking length $L_\phi$ crosses over the localization length $\xi\sim l\exp{(\pi k_Fl/2)}$ with lowering temperature, where $k_F$ and $l$ are the Fermi quasimomentum and mean free path, respectively. It has been shown that all the experimental data can be understood within framework of simple model of the conductivity over delocalized states. This model differs from the conventional model of the weak localization developed for $k_Fl\gg 1$ and $L_\phi\ll\xi$ by one point: the value of the quantum interference contribution to the conductivity is restricted not only by the phase breaking length $L_\phi$ but by the localization length $\xi$ as well. We show that just the quantity $(\tau_\phi^\ast)^{-1}=\tau_\phi^{-1}+\tau_\xi^{-1}$ rather than $\tau_\phi^{-1}$, where $\tau_\phi\propto T^{-1}$ is the dephasing time and $\tau_\xi\sim\tau\exp(\pi k_F l)$, is responsible for the temperature and magnetic field dependences of the conductivity over the wide range of temperature and disorder strength down to the conductivity of order $10^{-2} e^2/h$.Comment: 11 pages, 15 figure

Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas

The results of an experimental study of interaction quantum correction to the conductivity of two-dimensional electron gas in A$_3$B$_5$ semiconductor quantum well heterostructures are presented for a wide range of $T\tau$-parameter ($T\tau\simeq 0.03-0.8$), where $\tau$ is the transport relaxation time. A comprehensive analysis of the magnetic field and temperature dependences of the resistivity and the conductivity tensor components allows us to separate the ballistic and diffusion parts of the correction. It is shown that the ballistic part renormalizes in the main the electron mobility, whereas the diffusion part contributes to the diagonal and does not to the off-diagonal component of the conductivity tensor. We have experimentally found the values of the Fermi-liquid parameters describing the electron-electron contribution to the transport coefficients, which are found in a good agreement with the theoretical results.Comment: 11 pages, 11 figure

The environment effect on operation of in-vessel mirrors for plasma diagnostics in fusion devices

First mirrors will be the plasma facing components of optical diagnostic systems in ITER. Mirror surfaces will undergo modification caused by erosion and re-deposition processes [1,2]. As a consequence, the mirror performance may be changed and may deteriorate [3,4]. In the divertor region it may also be obscured by deposition [5-7]. The limited access to in-vessel components of ITER calls for testing the mirror materials in present day devices in order to gather information on the material damage and degradation of the mirror performance, i.e. reflectivity. A dedicated experimental programme, First Mirror Test (FMT), has been initiated at the JET tokamak within the framework Tritium Retention Studies (TRS).Comment: 12th International Congress on Plasma Physics, 25-29 October 2004, Nice (France).Submitted by B. Schunke on behalf of V. Voytseny