Tearing of free-standing graphene

We examine the fracture mechanics of tearing graphene. We present a molecular dynamics simulation of the propagation of cracks in clamped, free-standing graphene as a function of the out-of-plane force. The geometry is motivated by experimental configurations that expose graphene sheets to out-of-plane forces, such as back-gate voltage. We establish the geometry and basic energetics of failure and obtain approximate analytical expressions for critical crack lengths and forces. We also propose a method to obtain graphene's toughness. We observe that the cracks' path and the edge structure produced are dependent on the initial crack length. This work may help avoid the tearing of graphene sheets and aid the production of samples with specific edge structures.CAPESNational Science Foundation DMR 1002428Physic

Transillumination imaging through scattering media by use of photorefractive polymers

We demonstrate the use of a near-infrared-sensitive photorefractive polymer with high efficiency for imaging through scattering media, using an all-optical holographic time gate. Imaging through nine scattering mean free paths is performed at 800 nm with a mode-locked continuous-wave Ti:sapphire laser

Dynamical stability of the crack front line

Dynamical stability of the crack front line that propagates between two plates is studied numerically using the simple two-dimensional mass-spring model. It is demonstrated that the straight front line is unstable for low speed while it becomes stable for high speed. For the uniform model, the roughness exponent in the slower speed region is fairly constant around 0.4 and there seems to be a rough-smooth transition at a certain speed. For the inhomogeneous case with quenched randomness, the transition is gradual.Comment: 14 pages, 7 figure

Third-order optical autocorrelator for time-domain operation at telecommunication wavelengths

We report on amorphous organic thin films that exhibit efficient third-harmonic generation at telecommunication wavelengths. At 1550 nm, micrometer-thick samples generate up to 17 µW of green light with input power of 250 mW delivered by an optical parametric oscillator. This high conversion efficiency is achieved without phase matching or cascading of quadratic nonlinear effects. With these films, we demonstrate a low-cost, sensitive third-order autocorrelator that can be used in the time-frequency domain

Necessary and sufficient condition for longitudinal magnetoresistance

Since the Lorentz force is perpendicular to the magnetic field, it should not affect the motion of a charge along the field. This argument seems to imply absence of longitudinal magnetoresistance (LMR) which is, however, observed in many materials and reproduced by standard semiclassical transport theory applied to particular metals. We derive a necessary and sufficient condition on the shape of the Fermi surface for non-zero LMR. Although an anisotropic spectrum is a pre-requisite for LMR, not all types of anisotropy can give rise to the effect: a spectrum should not be separable in any sense. More precisely, the combination $k_{\rho}v_{\phi}/v_{\rho}$, where $k_\rho$ is the radial component of the momentum in a cylindrical system with the z-axis along the magnetic field and $v_{\rho} (v_{\phi}$) is the radial (tangential) component of the velocity, should depend on the momentum along the field. For some lattice types, this condition is satisfied already at the level of nearest-neighbor hopping; for others, the required non-separabality occurs only if next-to-nearest-neighbor hopping is taken into account.Comment: 7 pages, 2 figure

Ultrafast-pulse diagnostic using third-order frequency-resolved optical gating in organic films

We report on the diagnostic of ultrafast pulses by frequency-resolved optical gating (FROG) based on strong third-harmonic generation (THG) in amorphous organic thin films. The high THG conversion efficiency of these films allows for the characterization of sub-nanojoule short pulses emitting at telecommunication wavelengths using a low cost portable fiber spectrometer

Magnetic Strings in Dilaton Gravity

First, I present two new classes of magnetic rotating solutions in four-dimensional Einstein-Maxwell-dilaton gravity with Liouville-type potential. The first class of solutions yields a 4-dimensional spacetime with a longitudinal magnetic field generated by a static or spinning magnetic string. I find that these solutions have no curvature singularity and no horizons, but have a conic geometry. In these spacetimes, when the rotation parameter does not vanish, there exists an electric field, and therefore the spinning string has a net electric charge which is proportional to the rotation parameter. The second class of solutions yields a spacetime with an angular magnetic field. These solutions have no curvature singularity, no horizon, and no conical singularity. The net electric charge of the strings in these spacetimes is proportional to their velocities. Second, I obtain the ($n+1$)-dimensional rotating solutions in Einstein-dilaton gravity with Liouville-type potential. I argue that these solutions can present horizonless spacetimes with conic singularity, if one chooses the parameters of the solutions suitable. I also use the counterterm method and compute the conserved quantities of these spacetimes.Comment: 16 pages, no figure, references added, some minor correction

Ab initio calculation of intrinsic spin Hall effect in semiconductors

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect beyond the four band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the $ac$ spin Hall conductivity in the semiconductors is large in pure as well as doped semiconductors.Comment: Phys. Rev. Lett. (accepted