Modulation of a surface plasmon-polariton resonance by sub-terahertz diffracted coherent phonons

Coherent sub-THz phonons incident on a gold grating that is deposited on a dielectric substrate undergo diffraction and thereby induce an alteration of the surface plasmon-polariton resonance. This results in efficient high-frequency modulation (up to 110 GHz) of the structure's reflectivity for visible light in the vicinity of the plasmon-polariton resonance. High modulation efficiency is achieved by designing a periodic nanostructure which provides both plasmon-polariton and phonon resonances. Our theoretical analysis shows that the dynamical alteration of the plasmon-polariton resonance is governed by modulation of the slit widths within the grating at the frequencies of higher-order phonon resonances.Comment: 5 pages, 4 figure

Factorization and Scaling in Hadronic Diffraction

In standard Regge theory with a pomeron intercept a(0)=1+\epsilon, the contribution of the tripe-pomeron amplitude to the t=0 differential cross section for single diffraction dissociation has the form d\sigma/dM^2(t=0) \sim s^{2\epsilon}/(M^2)^{1+\epsilon}. For \epsilon>0, this form, which is based on factorization, does not scale with energy. From an analysis of p-p and p-pbar data from fixed target to collider energies, we find that such scaling actually holds, signaling a breakdown of factorization. Phenomenologically, this result can be obtained from a scaling law in diffraction, which is embedded in the hypothesis of pomeron flux renormalization introduced to unitarize the triple pomeron amplitude.Comment: 39 pages, Latex, 16 figure

Controlled lasing from active optomechanical resonators

Planar microcavities with distributed Bragg reflectors (DBRs) host, besides confined optical modes, also mechanical resonances due to stop bands in the phonon dispersion relation of the DBRs. These resonances have frequencies in the sub-terahertz (10E10-10E11 Hz) range with quality factors exceeding 1000. The interaction of photons and phonons in such optomechanical systems can be drastically enhanced, opening a new route toward manipulation of light. Here we implemented active semiconducting layers into the microcavity to obtain a vertical-cavity surface-emitting laser (VCSEL). Thereby three resonant excitations -photons, phonons, and electrons- can interact strongly with each other providing control of the VCSEL laser emission: a picosecond strain pulse injected into the VCSEL excites long-living mechanical resonances therein. As a result, modulation of the lasing intensity at frequencies up to 40 GHz is observed. From these findings prospective applications such as THz laser control and stimulated phonon emission may emerge

Experimental study of negative photoconductivity in n-PbTe(Ga) epitaxial films

We report on low-temperature photoconductivity (PC) in n-PbTe(Ga) epitaxial films prepared by the hot-wall technique on -BaF_2 substrates. Variation of the substrate temperature allowed us to change the resistivity of the films from 10^8 down to 10_{-2} Ohm x cm at 4.2 K. The resistivity reduction is associated with a slight excess of Ga concentration, disturbing the Fermi level pinning within the energy gap of n-PbTe(Ga). PC has been measured under continuous and pulse illumination in the temperature range 4.2-300 K. For films of low resistivity, the photoresponse is composed of negative and positive parts. Recombination processes for both effects are characterized by nonexponential kinetics depending on the illumination pulse duration and intensity. Analysis of the PC transient proves that the negative photoconductivity cannot be explained in terms of nonequilibrium charge carriers spatial separation of due to band modulation. Experimental results are interpreted assuming the mixed valence of Ga in lead telluride and the formation of centers with a negative correlation energy. Specifics of the PC process is determined by the energy levels attributed to donor Ga III, acceptor Ga I, and neutral Ga II states with respect to the crystal surrounding. The energy level corresponding to the metastable state Ga II is supposed to occur above the conduction band bottom, providing fast recombination rates for the negative PC. The superposition of negative and positive PC is considered to be dependent on the ratio of the densities of states corresponding to the donor and acceptor impurity centers.Comment: 7 pages, 4 figure

Single electron emission in two-phase xenon with application to the detection of coherent neutrino-nucleus scattering

We present an experimental study of single electron emission in ZEPLIN-III, a two-phase xenon experiment built to search for dark matter WIMPs, and discuss applications enabled by the excellent signal-to-noise ratio achieved in detecting this signature. Firstly, we demonstrate a practical method for precise measurement of the free electron lifetime in liquid xenon during normal operation of these detectors. Then, using a realistic detector response model and backgrounds, we assess the feasibility of deploying such an instrument for measuring coherent neutrino-nucleus elastic scattering using the ionisation channel in the few-electron regime. We conclude that it should be possible to measure this elusive neutrino signature above an ionisation threshold of $\sim$3 electrons both at a stopped pion source and at a nuclear reactor. Detectable signal rates are larger in the reactor case, but the triggered measurement and harder recoil energy spectrum afforded by the accelerator source enable lower overall background and fiducialisation of the active volume

Phonon spectroscopy with chirped shear and compressive acoustic pulses

Picosecond duration compressive and shear phonon wave packets injected into (311) GaAs slabs transform after propagation through ∼1  mm into chirped acoustic pulses with a frequency increasing in time due to phonon dispersion. By probing the temporal optical response to coherent phonons in a near surface layer of the GaAs slab, we show that phonon chirping opens a transformational route for high-sensitivity terahertz and subterahertz phonon spectroscopy. Temporal gating of the chirped phonon pulse allows the selection of a narrow band phonon spectrum with a central frequency up to 0.4 THz for longitudinal and 0.2 THz for transverse phonons