Oxidation of AlInAs for current blocking in a photonic crystal laser

To make an electrically pumped photonic crystal membrane laser is a challenging task. One of the problems is how to avoid short circuiting between the p- and n-doped parts of the laser diode, when the membrane thickness is limited to 200-300nm. We propose to use the oxide of AlInAs to realize a current blocking function. In this way, based on submicron selective area re-growth, we aim for electrically injected photonic crystal lasers with high output power, small threshold currents and low power consumption. Here results are presented on the oxidation of AlInAs. The results show that it is feasible to use the oxide of AlInAs for current blocking in an InP-based membrane photonic crystal laser

The performance of organic electronic ratchets

Organic electronic ratchets rectify time-correlated external driving forces, giving output powers that can drive electronic circuitry. In this work their performance characteristics are investigated using numerical modeling and measurements. It is shown how the characteristic parameters of the time–varying asymmetric potential like length scales and amplitude, as well as the density and mobility of the charge carriers in the device influence the performance characteristics. Various ratchet efficiencies and their relations are discussed. With all settings close to optimum, a ratchet with charge displacement and power efficiencies close to 50% and 7% respectively is obtained

First demonstration of single-layer InAs/InP (100) quantum-dot laser : continuous wave, room temperature, ground state

Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at room temperature on the QD ground state transition employing a single-layer of QDs grown by metal organic vapour phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). These QDs on the QW laser exhibit a high slope efficiency and a lasing wavelength of 1.74 µm, which is important for biomedical applications

Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices

In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C 60 fullerene. The addition of C 60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3¿¿dB/cm has been demonstrated

Differences in neuropsychiatric symptoms between nursing home residents with young-onset dementia and late-onset dementia

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The 243 steps of making photonic integrated circuits in InP

The fabrication ofInP-based Photonic Integrated Circuits (PICs) is a complex process. The process used in the COBRA cleanroom in Eindhoven consists of 13 deposition, 10 lithography, 14 dry- and 7 wet-etching steps. Together with the intermediate cleaning, preparation and inspection procedures, the total process flow consists of 243 steps. In this paper we show how we created a robust modular process flow that can be usedfor a large variety of active- and passive circuits. These circuits can be fabricated together in multi-project wafer runs, allowing a drastic reduction of the fabrication costs making even small-volume production economicallyfeasible

Heterogeneously integrated III-V/Si multi-wavelength laser based on a ring resonator array multiplexer

A 4-channel multi-wavelength laser integrated on a silicon waveguide circuit is realized. Waveguide-coupled output powers of 2mW and a side mode suppression ratio of more than 45dB for all channels is realized

Advanced Photonics Congress

Abstract: We investigated the passivation of III-V semiconductor nanostructures using wet-chemical ammonium sulfide treatment and SiO x encapsulation. We achieved an ultra-low surface recombination velocity value of ~530 cm/s enabling the future development of high-performance room-temperature nanolasers

III-V/silicon first order distributed feedback lasers integrated on SOI waveguide circuits

Heterogeneously integrated III-V-on-silicon first order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel design exploiting high confinement in the active waveguide is demonstrated. 5 mW output power coupled to a silicon waveguide, 40 dB side mode suppression ratio and continuous wave operation up to 60°C is obtained