233 research outputs found

    Ion implantation and low-temperature epitaxial regrowth of GaAs

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    Channeling and transmission electron microscopy have been used to investigate the parameters that govern the extent of damage in ion‐implanted GaAs and the crystal quality following capless furnace annealing at low temperature (∌400 °C). The implantation‐induced disorder showed a strong dependence on the implanted ion mass and on the substrate temperature during implantation. When the implantation produced a fully amorphous surface layer the main parameter governing the regrowth was the amorphous thickness. Formation of microtwins after annealing was observed when the initial amorphous layer was thicker than 400 Å. Also, the number of extended residual defects after annealing increased linearly with the initial amorphous thickness and extrapolation of that curve predicts good regrowth of very thin (<400 Å) GaAs amorphous layers produced by ion implantation. A model is presented to explain the observed features of the low‐temperature annealing of GaAs

    Epitaxial regrowth of thin amorphous GaAs layers

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    Channeling and transmission electron microscopy have been used to investigate the parameters that govern the crystal quality following capless funace annealing at low temperature (~ 400 °C) in ion-implanted GaAs. From the results obtained, we concluded that the crystal quality after annealing depends strongly on the thickness of the amorphous layer generated by ion implantation and the number of residual defects increases linearly with the thickness of the implanted layer. Single-crystal regrowth free of defects detectable by megaelectron volt He + channeling was achieved for a very thin amorphous layer (<~ 400 Å)

    Criteria for multiplicity for complex biochemical reactions

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    This article does not have an abstract

    World health system performance revisited: the impact of varying the relative importance of health system goals

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    BACKGROUND: In 2002, the World Health Organization published a health system performance ranking for 191 member countries. The ranking was based on five indicators, with fixed weights common to all countries. METHODS: We investigate the feasibility and desirability of using mathematical programming techniques that allow weights to vary across countries to reflect their varying circumstances and objectives. RESULTS: By global distributional measures, scores and ranks are found to be not very sensitive to changes in weights, although differences can be large for individual countries. CONCLUSIONS: Building the flexibility of variable weights into calculation of the performance index is a useful way to respond to the debates and criticisms appearing since publication of the ranking

    Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene

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    Graphene epitaxy on the Si face of a SiC wafer offers monolayer graphene with unique crystal orientation at the wafer-scale. However, due to carrier scattering near vicinal steps and excess bilayer stripes, the size of electrically uniform domains is limited to the width of the terraces extending up to a few microns. Nevertheless, the origin of carrier scattering at the SiC vicinal steps has not been clarified so far. A layer-resolved graphene transfer (LRGT) technique enables exfoliation of the epitaxial graphene formed on SiC wafers and transfer to flat Si wafers, which prepares crystallographically single-crystalline monolayer graphene. Because the LRGT flattens the deformed graphene at the terrace edges and permits an access to the graphene formed at the side wall of vicinal steps, components that affect the mobility of graphene formed near the vicinal steps of SiC could be individually investigated. Here, we reveal that the graphene formed at the side walls of step edges is pristine, and scattering near the steps is mainly attributed by the deformation of graphene at step edges of vicinalized SiC while partially from stripes of bilayer graphene. This study suggests that the two-step LRGT can prepare electrically single-domain graphene at the wafer-scale by removing the major possible sources of electrical degradation

    Building capacity without disrupting health services: public health education for Africa through distance learning

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    The human resources crisis in Africa is especially acute in the public health field. Through distance education, the School of Public Health of the University of the Western Cape, South Africa, has provided access to master's level public health education for health professionals from more than 20 African countries while they remain in post. Since 2000, interest has increased overwhelmingly to a point where four times more applications are received than can be accommodated. This home-grown programme remains sensitive to the needs of the target learners while engaging them in high-quality learning applied in their own work contexts

    Protocol: Health, social care and technological interventions to improve functional ability of older adults: Evidence and gap map

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    This is the final version. Available on open access from Wiley via the DOI in this frecordThis is a protocol for a Campbell Evidence and Gap Map. The objectives are to identify and assess the available evidence on health, social care and technological interventions to improve functional ability among older adults

    Engaging Undergraduates to Solve Global Health Challenges: A New Approach Based on Bioengineering Design

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    Recent reports have highlighted the need for educational programs to prepare students for careers developing and disseminating new interventions that improve global public health. Because of its multi-disciplinary, design-centered nature, the field of Biomedical Engineering can play an important role in meeting this challenge. This article describes a new program at Rice University to give undergraduate students from all disciplines a broad background in bioengineering and global health and provides an initial assessment of program impact. Working in partnership with health care providers in developing countries, students in the Beyond Traditional Borders (BTB) initiative learn about health challenges of the poor and put this knowledge to work immediately, using the engineering design process as a framework to formulate solutions to complex global health challenges. Beginning with a freshman design project and continuing through a capstone senior design course, the BTB curriculum uses challenges provided by partners in the developing world to teach students to integrate perspectives from multiple disciplines, and to develop leadership, communication, and teamwork skills. Exceptional students implement their designs under the guidance of clinicians through summer international internships. Since 2006, 333 students have designed more than 40 technologies and educational programs; 28 have been implemented in sub-Saharan Africa, Latin America, the Caribbean, southeast Asia, and the United States. More than 18,000 people have benefited from these designs. 95% of alumni who completed an international internship reported that participation in the program changed or strengthened their career plans to include a focus on global health medicine, research, and/or policy. Empowering students to use bioengineering design to address real problems is an effective way to teach the new generation of leaders needed to solve global health challenges
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