5,594 research outputs found

    Ge growth on ion-irradiated Si self-affine fractal surfaces

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    We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the morphology of ultrathin Ge films eposited on pristine Si(100) and ion-irradiated Si(100) self-affine fractal surfaces. The pristine and the ion-irradiated Si(100) surface have roughness exponents of alpha=0.19+/-0.05 and alpha=0.82+/-0.04 respectively. These measurements were carried out on two halves of the same sample where only one half was ion-irradiated. Following deposition of a thin film of Ge (~6 A) the roughness exponents change to 0.11+/-0.04 and 0.99+/-0.06, respectively. Upon Ge deposition, while the roughness increases by more than an order of magnitude on the pristine surface, a smoothing is observed for the ion-irradiated surface. For the ion-irradiated surface the correlation length xi increases from 32 nm to 137 nm upon Ge deposition. Ge grows on Si surfaces in the Stranski-Krastanov or layer-plus-island mode where islands grow on a wetting layer of about three atomic layers. On the pristine surface the islands are predominantly of square or rectangular shape, while on the ion-irradiated surface the islands are nearly diamond shaped. Changes of adsorption behaviour of deposited atoms depending on the roughness exponent (or the fractal dimension) of the substrate surface are discussed.Comment: 5 pages, 2 figures and 1 tabl

    A new study of shower age distribution in near vertical showers by EAS air shower array

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    The air shower array has been developed since it started operation in 1931. The array covering an area of 900 sq m now incorporates 21 particle density sampling detectors around two muon magnetic spectrographs. The air showers are detected in the size range 10 to the 4th power to 10 to the 6th power particles. A total of 11000 showers has so far been detected. Average values of shower age have been obtained in various shower size ranges to study the dependence of shower age on shower size. The core distance dependence of shower age parameter has also been analyzed for presentation

    Predicting and explaining behavioral intention and hand sanitizer use among US Army soldiers

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    Citation: Naiqing Lin, Kevin R. Roberts, (2017) Predicting and explaining behavioral intention and hand sanitizer use among US Army soldiers, In American Journal of Infection Control, 45(4),396-400. https://doi.org/10.1016/j.ajic.2016.11.008.According to the Centers for Disease Control and Prevention and the World Health Organization, simple hand washing is one of the most effective methods to prevent the spread of infectious diseases.1,2,3 The literature shows a strong and consistent association between personal hand hygiene and reduced gastrointestinal disease, respiratory illness, and absenteeism in the work force.1,4,5 Hands are the primary mode of transmission for many infectious diseases, particularly among military personnel.6 Hand hygiene is a proven measure of controlling infection in military settings

    Nanodot to Nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si (100)

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    We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this critical size. Larger islands adopt a rectangular shape with ever increasing length and the width decreasing to an asymptotic value of ~25 nm. This produces long wires of nearly constant width.We have observed nanowire islands with aspect ratios as large as ~ 20:1. The long nanowire heterostructures grow partly above (~ 3 nm) the surface, but mostly into (~17 nm) the Si substrate. These self-organized nanostructures behave as nanoscale Schottky diodes. They may be useful in Si-nanofabrication and find potential application in constructing nano devices.Comment: 9 pages, 7 figure
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