2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application

Traditional memory devices are facing more challenges due to continuous down-scaling. 6T-SRAM suffers from variability [1-2] and reliability [3-4] issues, which introduce cell stability problems. DRAM cells with one transistor, one capacitor (1T1C) struggle to maintain refresh time [5-6]. Efforts have been made to find new memory solutions, such as one transistor (1T) solutions [7-9]. Floating body based memory structures are among the potential candidates, but impact ionization or band-to-band tunnelling (B2BT) limits their refresh time [10]. A recently proposed zero impact ionization and zero subthreshold swing device named Z2FET [9, 11-12] has been demonstrated and is a promising candidate for 1T DRAM memory cell due to technology advantages such as CMOS technology compatibility, novel capacitor-less structure and sharp switching characteristics. In the Z2FET memory operation, refresh frequency is determined by data retention time. Previous research [11-12] is lacking systematic simulation analysis and understanding on the underlying mechanisms. In this paper, we propose a new simulation methodology to accurately extract retention time in Z2FET devices and understand its dependency on applied biases, temperatures and relevant physical mechanisms. Since the stored ‘1’ state in Z2FET is an equilibrium state [9, 11-12] and there is no need to refresh, we will concentrate on state ‘0’ retention. Two types of ‘0’ retention time: HOLD ‘0’ and READ ‘0’ retention time will be discussed separately

A Prediction of the B*_c mass in full lattice QCD

By using the Highly Improved Staggered Quark formalism to handle charm, strange and light valence quarks in full lattice QCD, and NRQCD to handle bottom valence quarks we are able to determine accurately ratios of the B meson vector-pseudoscalar mass splittings, in particular, (m(B*_c)-m(B_c))/(m(B*_s)-m(B_s)). We find this ratio to be 1.15(15), showing the `light' quark mass dependence of this splitting to be very small. Hence we predict m(B_c*) = 6.330(7)(2)(6) GeV where the first two errors are from the lattice calculation and the third from existing experiment. This is the most accurate prediction of a gold-plated hadron mass from lattice QCD to date.Comment: 4 pages, 2 figure

Terminal Electron–Proton Transfer Dynamics in the Quinone Reduction of Respiratory Complex I

Complex I functions as a redox-driven proton pump in aerobic respiratory chains. By reducing quinone (Q), complex I employs the free energy released in the process to thermodynamically drive proton pumping across its membrane domain. The initial Q reduction step plays a central role in activating the proton pumping machinery. In order to probe the energetics, dynamics, and molecular mechanism for the proton-coupled electron transfer process linked to the Q reduction, we employ here multiscale quantum and classical molecular simulations. We identify that both ubiquinone (UQ) and menaquinone (MQ) can form stacking and hydrogen-bonded interactions with the conserved Q binding-site residue His-38 and that conformational changes between these binding modes modulate the Q redox potentials and the rate of electron transfer (eT) from the terminal N2 iron-sulfur center. We further observe that, while the transient formation of semiquinone is not proton-coupled, the second eT process couples semiconcerted proton uptake from conserved tyrosine (Tyr-87) and histidine (His-38) residues within the active site. Our calculations indicate that both UQ and MQ have low redox potentials around -260 and -230 mV, respectively, in the Q-binding site, respectively, suggesting that release of the Q toward the membrane is coupled to an energy transduction step that could thermodynamically drive proton pumping in complex I.Peer reviewe

Thorough understanding of retention time of Z2FET memory operation

A recently reported zero impact ionization and zero subthreshold swing device Z2FET is a promising candidate for capacitor-less dynamic random access memory (DRAM) memory cell. In the memory operation, data retention time determines refresh frequency and is one of the most important memory merits. In this paper, we have systematically investigated the Z2FET retention time based on a newly proposed characterization methodology. It is found that the degradation of HOLD ``0'' retention time originates from the gated-silicon on insulator (SOI) portion rather than the intrinsic-SOI region of the Z2FET. Electrons accumulate under front gate and finally collapse the potential barrier turning logic ``0''-``1.'' It appears that Shockley-Read-Hall (SRH) generation is the main source for electrons accumulation. Z2FET scalability has been investigated in terms of retention time. As the Z2FET is downscaled, the mechanism dominating electrons accumulation switches from SRH to parasitic injection of electrons from the cathode. The results show that the downscaling of Lg has little effect on data ``0'' retention, but Lin is limited to ~ 125 nm. An optimization method of the fabrication process is proposed based on this new understanding, and Lin can be further scaled down to 75 nm. We have demonstrated by 2-D TCAD simulation that Z2FET is a promising DRAM cells' candidate particularly for Internet-of-Things applications

Cusps in K_L --> 3 pi decays

The pion mass difference generates a pronounced cusp in K --> 3 pi decays, the strength of which is related to the pi pi S-wave scattering lengths. We apply an effective field theory framework developed earlier to evaluate the amplitudes for K_L --> 3 pi decays in a systematic manner, where the strictures imposed by analyticity and unitarity are respected automatically. The amplitudes for the decay eta --> 3 pi are also given.Comment: 15 pages, 3 figures, uses Elsevier styl

Cusps in K --> 3 pi decays

The pion mass difference generates a pronounced cusp in K --> 3 pi decays. As has recently been pointed out by Cabibbo and Isidori, an accurate measurement of the cusp may allow one to pin down the S-wave pi pi scattering lengths to high precision. Here, we present and illustrate an effective field theory framework that allows one to determine the structure of this cusp in a straightforward manner. The strictures imposed by analyticity and unitarity are respected automatically.Comment: 14 pages, 3 figures, uses Elsevier styl

SM with four generations: Selected implications for rare B and K decays

We extend our recent work and study implications of the Standard Model with four generations (SM4) for rare B and K decays. We again take seriously the several 2-3 $\sigma$ anomalies seen in B, $B_s$ decays and interpret them in the context of this simple extension of the SM. SM4 is also of course of considerable interest for its potential relevance to dynamical electroweak symmetry breaking and to baryogenesis. Using experimental information from processes such as $B \to X_s \gamma$, $B_d$ and $B_s$ mixings, indirect CP-violation from $K_L \to \pi \pi$ etc along with oblique corrections, we constrain the relevant parameter space of the SM4, and find $m_{t'}$ of about 400-600 GeV with a mixing angle $| V_{t'b}^*V_{t's}|$ in the range of about (0.05 to 1.4)$\times 10^{-2}$ and with an appreciable CP-odd associated phase, are favored by the current data. Given the unique role of the CP asymmetry in $B_s \to \psi \phi$ due to its gold-plated nature, correlation of that with many other interesting observables, including the semileptonic asymmetry ($A_{SL}$) are studied in SM4. We also identify several processes, such as $B \to X_s \nu \bar\nu$, $K_L \to \pi^0 \nu \bar \nu$ etc, that are significantly different in SM4 from the SM. Experimentally the very distinctive process $B_s\to \mu^+\mu^-$ is also discussed; the branching ratio can be larger or smaller than in SM, $(3.2 \to 4.2)\times 10^{-9}$, by a factor of ${\cal{O}}(3)$.Comment: v2: 49 pages, 20 eps figures, Corrected some typos, added few references and minor changes with regard to direct CP in K pi. Also some added information to facilitate direct comparison with Buras et al, arXiv:1002.2126