Pressure Mapping Mat for Tele-Home Care Applications

In this paper we present the development of a mat-like pressure mapping system based on a single layer textile sensor and intended to be used in home environments for monitoring the physical condition of persons with limited mobility. The sensor is fabricated by embroidering silver-coated yarns on a light cotton fabric and creating pressure-sensitive resistive elements by stamping the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) at the crossing points of conductive stitches. A battery-operated mat prototype was developed and includes the scanning circuitry and a wireless communication module. A functional description of the system is presented together with a preliminary experimental evaluation of the mat prototype in the extraction of plantar pressure parameters

Charge density increase in submonolayer organic field-effect transistors

Interface confinement plays a central role in charge carrier accumulation and transport along the channel of organic field-effect transistors. Understanding the relevant interfacial interactions that affect the energy landscape experienced by carriers in the channel is of fundamental interest. Here we investigate charge transport in the submonolayer regime of pentacene transistors in which confinement arises due to the finite size of the interconnected semiconducting islands. In situ real-time electrical characterization is used to monitor the formation and evolution of the accumulation layer at the very early stages of growth. The morphology of the confining interfaces is controlled by growth conditions and pentacene coverage. Charge transport occurs when percolation pathways connecting source and drain electrodes are formed at a critical coverage. The displacement current across the oxide/semiconductor interface is observed starting from the onset of percolation (0.69 monolayer coverage). The analysis of the characteristics shows that already the submonolayer film fully screens the gate field and accumulates higher charge carrier density as compared to the monolayer film. We propose an electrostatic model to correlate the charge density to the characteristic length scale of the submonolayer film and the thickness of the dielectric layer. This explains charge mobility and threshold voltage of thin-film transistors in the submonolayer regime

Two-dimensional electron gas formation in undoped In[0.75]Ga[0.25]As/In[0.75]Al[0.25]As quantum wells

We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to reported values in similar modulation-doped structures. We found experimentally that the electronic charge in the quantum well is likely due to a deep-level donor state in the In[0.75]Al[0.25]As barrier band gap, whose energy lies within the In[0.75]Ga[0.25]As/In[0.75]Al[0.25]As conduction band discontinuity. This result is further confirmed through a Poisson-Schroedinger simulation of the two-dimensional electron gas structure.Comment: 17 pages, 6 figures, to be published in J. Vac. Sci. Technol.

Spatial-distribution of recombination centers in gaaste - effects of the doping level

The distribution in liquid-encapsulated-Czochralski (LEC) GaAs:Te wafers of point and complex defects has been investigated together with their influence on the minority-carrier diffusion length L. Three wafers with different Te-doping concentration (2.2 X 10(17), 4.5 X 10(17), and 1.5 X 10(18) cm-3) have been studied by means of the electron-beam-induced-current (EBIC) mode of scanning electron microscopy and of the surface photovoltage (SPV) method. The morphology and electrical activity of the defects observed across each wafer have been correlated to the formation and distribution of deep electronic levels, which are significantly affected by the tellurium concentration. The diffusion length has been found to be mainly controlled by deep levels associated with dislocations. EBIC localized measurements of L and of the net ionized free-carrier concentration provide evidence for the influence of Te concentration on impurity segregation at complex defects

Direct imaging of defect formation in strained organic flexible electronics by Scanning Kelvin Probe Microscopy

The development of new materials and devices for flexible electronics depends crucially on the understanding of how strain affects electronic material properties at the nano-scale. Scanning Kelvin-Probe Microscopy (SKPM) is a unique technique for nanoelectronic investigations as it combines non-invasive measurement of surface topography and surface electrical potential. Here we show that SKPM in non-contact mode is feasible on deformed flexible samples and allows to identify strain induced electronic defects. As an example we apply the technique to investigate the strain response of organic thin film transistors containing TIPS-pentacene patterned on polymer foils. Controlled surface strain is induced in the semiconducting layer by bending the transistor substrate. The amount of local strain is quantified by a mathematical model describing the bending mechanics. We find that the step-wise reduction of device performance at critical bending radii is caused by the formation of nano-cracks in the microcrystal morphology of the TIPS-pentacene film. The cracks are easily identified due to the abrupt variation in SKPM surface potential caused by a local increase in resistance. Importantly, the strong surface adhesion of microcrystals to the elastic dielectric allows to maintain a conductive path also after fracture thus providing the opportunity to attenuate strain effects

The EL2 trap in highly doped GaAs:Te

We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed

Ultra-Stable and Robust Response to X-Rays in 2D Layered Perovskite Micro-Crystalline Films Directly Deposited on Flexible Substrate

2D layered hybrid perovskites have recently attracted an increasing interest as active layers in LEDs and UV–Vis photodetectors. 2D perovskites crystallize in a natural self-assembled quantum well-like structure and possess several interesting features among which low-temperature (<100 °C) synthesis and low defect density. Here are presented solid-state ionizing radiation direct detectors based on the 2D layered hybrid perovskite PEA2PbBr4 (PEA = C6H5C2H4NH3+) deposited from solution using scalable techniques and directly integrated onto a pre-patterned flexible substrate in the form of micro-crystalline films displaying crystal-like behavior, as evidenced by the ultra-fast (sub-microsecond) and good detection performances under UV light. The effective detection of X-rays (up to 150 kVp) is demonstrated with sensitivity values up to 806 µC Gy−1 cm−2 and Limit of Detection of 42 nGy s−1, thus combining the excellent performance for two relevant figures of merit for solid-state detectors. Additionally, the tested devices exhibit exceptionally stable response under constant irradiation and bias, assessing the material robustness and the intimate electrical contact with the electrodes. PEA2PbBr4 micro-crystalline films directly grown on flexible pre-patterned substrate open the way for large-area solid-state detectors working at low radiation flux for ultra-fast X-ray imaging and dosimetry

In Situ Nanomechanical Characterization Techniques for Soft Bioelectronic Interfaces and Their Building Blocks

Soft bioelectronic interfaces constitute a paradigm shift for biomedicaldevices. High-resolution monitoring and stimulation of physiologicalprocesses in vivo are becoming possible with minimally invasive devicesoperated without inflicting tissue damage or discomfort over prolongedtimescales. However, the development and commercialization of suchinterfaces still must address significant challenges. Biological tissue issubjected to continuous motion and the related device deformations caneasily trigger fracture or delamination of the device components, puttinglong-term durability of soft implants at risk. In this review, an overview ofexperimental techniques for testing mechanical properties and failuremechanisms of soft bioelectronic devices at the nanoscale while thedeformation takes place (in situ) is provided. Through the tensile test,bending test, nanoindentation, and micropillar compression test, precisemeasurements of the mechanical properties of individual building blocks andthe interfaces themselves can be obtained. Such parameters are crucial todesign, model, and optimize the device’s performance. Then, recent examplesof how this information guides design and optimization of soft bioelectronicinterfaces and devices for healthcare, robotics, and human–machineinterfaces is provided. Last of all, future research that is needed to fullyachieve long-term soft bioelectronic interfaces for integration with the humanbody is discussed

Organic Electrochemical Transistors as Versatile Analytical Potentiometric Sensors

Potentiometric transduction is an important tool of analytical chemistry to record chemical signals, but some constraints in the miniaturization and low-cost fabrication of the reference electrode are a bottleneck in the realization of more-advanced devices such as wearable and lab-on-a-chip sensors. Here, an organic electrochemical transistor (OECT) has been designed with an alternative architecture that allows to record the potentiometric signals of gate electrodes, which have been chemically modified to obtain Ag/AgnX interfaces (X = Cl−, Br−, I−, and S2−), without the use of a reference electrode. When the OECT is immersed in a sample solution, it reaches an equilibrium state, because PEDOT:PSS exchanges charges with the electrolyte until its Fermi level is aligned to the one of Ag/AgnX. The latter is controlled by Xn− concentration in the solution. As a consequence, in this spontaneous process, the conductivity of PEDOT:PSS changes with the electrochemical potential of the modified gate electrode without any external bias. The sensor works by applying only a fixed drain current or drain voltage and thus the OECT sensor operates with just two terminals. It is also demonstrated that, in this configuration, gate potential values extracted from the drain current are in good agreement with the ones measured with respect to a reference electrode being perfectly correlated (linear slope equal to 1.00 ± 0.03). In the case of the sulfide anion, the OECT performance overcomes the limit represented by the Nernst equation, with a sensitivity of 0.52 V decade−1. The presented results suggest that OECTs could be a viable option to fabricate advanced sensors based on potentiometric transduction

Textile chemical sensors based on conductive polymers for the analysis of sweat

Wearable textile chemical sensors are promising devices due to the potential applications in medicine, sports activities and occupational safety and health. Reaching the maturity required for commercialization is a technology challenge that mainly involves material science because these sensors should be adapted to flexible and light-weight substrates to preserve the comfort of the wearer. Conductive polymers (CPs) are a fascinating solution to meet this demand, as they exhibit the mechanical properties of polymers, with an electrical conductivity typical of semiconductors. Moreover, their biocompatibility makes them promising candidates for effectively interfacing the human body. In particular, sweat analysis is very attractive to wearable technologies as perspiration is a naturally occurring process and sweat can be sampled non-invasively and continuously over time. This review discusses the role of CPs in the development of textile electrochemical sensors specifically designed for real-time sweat monitoring and the main challenges related to this topic