On Marginal Entropy of Graphs

Marginal entropy is one of the distances based on the graph entropy. Then, this entropy is computed by the Wiener index of graphs. In this paper, we obtain the marginal entropy of paths, stars, double stars, cycles and vertex-transitive graphs

Physical Properties of Nanostructured CdO Films from Alkaline Baths Containing Saccharin as Additive

Nanostructured cadmium oxide (CdO) films were fabricated on glass substrates from alkaline baths containing saccharin as an additive by a successive ionic layer adsorption and reaction (SILAR) method. The effects of saccharin concentration in the bath on the structural, morphological, and optical properties were studied by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence, and Raman spectroscopy. The analyses showed that the surface morphologies, XRD peak intensities, Raman spectroscopy, and photoluminescence properties of CdO films changed with saccharin concentration. From the results, it can be said that morphological characteristic and optical properties of the films could be calibrated by adding various saccharin percentages in the growth bath

Jones Polynomial for Graphs of Twist Knots

We frequently encounter knots in the flow of our daily life. Either we knot a tie or we tie a knot on our shoes. We can even see a fisherman knotting the rope of his boat. Of course, the knot as a mathematical model is not that simple. These are the reflections of knots embedded in threedimensional space in our daily lives. In fact, the studies on knots are meant to create a complete classification of them. This has been achieved for a large number of knots today. But we cannot say that it has been terminated yet. There are various effective instruments while carrying out all these studies. One of these effective tools is graphs. Graphs are have made a great contribution to the development of algebraic topology. Along with this support, knot theory has taken an important place in low dimensional manifold topology. In 1984, Jones introduced a new polynomial for knots. The discovery of that polynomial opened a new era in knot theory. In a short time, this polynomial was defined by algebraic arguments and its combinatorial definition was made. The Jones polynomials of knot graphs and their applications were introduced by Murasugi. T. U˘gur and A. Kopuzlu found an algorithm for the Jones polynomials of torus knots K(2; q) in 2006. In this paper, first of all, it has been obtained signed graphs of the twist knots which are a special family of knots. We subsequently compute the Jones polynomials for graphs of twist knots. We will consider signed graphs associated with each twist knot diagrams

Diabetes mellitus and peripheral organs involvement: Current treatment options

Diabetes mellitus is a chronic and multi-systemic disease with various treatment options and has long-term effect on lifestyle of individuals and society. Not only disesase itself but also damage to peripherical organs as a result of disease in long term is an important cause of morbidity and mortality. In this review study it has been aimed to assess complications caused by peripherical organ involvment and treatment options rather than those caused by diabetes mellitus itself. J Clin Exp Invest 2014; 5 (2): 329-33

On total vertex-edge domination

Selected papers of International Conference on Life and Engineering Sciences (ICOLES 2018), Kyrenia, Cyprus, 2-6 September, 2018.In this paper we obtain an improved upper bound of total vertex edgedomination number of a tree. If T is a connected tree with order n, then γͭᵥₑ(T) ≤ m/3 with m = 6[ n/6] and we characterize the trees attaining this upper bound. Furthermore we provide a characterization of trees T with γͭᵥₑ(T) = γͭ (T).Publisher's Versio

Transmission electron microscopy, Raman, photoluminescence and electron spin resonance characterization of Si,Ge and SiGe nanocrystals in thin films synthesized by plasma enhanced chemical vapor deposition

YÖK Tez ID: 343928Bu çalışmada, güncel teknolojik uygulamalarda bir çok araştırmacının dikkatlerini üzerine çekmeyi başaran nano boyutlarda malzeme üretimi amaçlandı. Bu doğrultuda, Plazma Destekli Kimyasal Buharlaştırma Tekniği (PECVD) yardımı ile ince filmler büyütüldü. Büyütülen bu filmler daha sonra nanokristallerin oluşabilmesi için farklı sürelerde ısıl tavlanma işlemine tabi tutuldu. SiO2 film içerisinde tavlama sonucu oluşan Si, Ge ve SiGe alaşımlı nanokristallerinin boyut ve boyut dağılımına ilişkin yapısal özellikleri TEM ve Raman spektroskopi teknikleri yardımıyla incelendi. Ge nanokristal içeren silisyum oksit (SiO2) ince filmler GeH4, SiH4 ve N2O gazlarının farklı akış oranları kullanılarak plazma ortamında büyütüldü. Raman spektroskopisi yardımı ile farklı gaz akış oranlarında büyütülmüş filmlerde ve farklı sürelerdeki tavlamalarda Ge nanokristallerin oluşturulabileceği görüldü. Oluşturulan bu nanokristallerin boyutlarının gaz akış oranı ile tavlama süresine bağlı olduğu çalışmada gösterildi. Ayrıca SiO2 film içerisinde tavlama sonucu oluşan nanokristallerinin optiksel özelliklerine ilişkin olarak fotoışıma ölçümleri alındı. Aynı zamanda bu numunelerdeki yapı kusurlarının varlığını tespit etmek amacıyla g-ışınları yardımıyla numunelerin Elektron Spin Rezonans (ESR) ölçümleri yardımıyla nanokristaller içindeki kırık bantlar ve kusurlar ile g-değerlerinin ölçülmesi sonucu kusur merkezlerinin yoğunluğu belirlendi. Elde edilen tüm bu sonuçlar literatürle karşılaştırıldı ve uyum içerisinde olduğu görüldü.In this study, we have proposed to produce nano size metarials which are promised for technological aplications by many scienties. In this aim, thin films have been grown using by Plasma Enchanced Chemical Vapor Deposition (PECVD). After that, grown these films have been annealed to form nanocrystals inside the matrix for different temperature ranges. Due to annealing processes Si, Ge, SiGe nanocrystals in SiO2 martix size and size distiributions have been investigated using by Transmission Electron Microscopy (TEM) and Raman Spectroscopy. SiO2 thin films with Ge nanocriystals have been grown GeH4, SiH4 and N2O gases different flow rates using plasma chamber. Ge nanocrystals formations have been observed depends on annealing time and various gas flow rates by Raman Spectroscopy. The results show that nanocrystals sizes depends on annealing time, temperature and flow rates, clearly. Morever, optical properties have been searched for these nanocrystals using by Photoluminescence (PL). At the same time, defects, in these samples have been obtained from Electron Spin Resonance (ESR) spectroscopy using g-ray broken bands and defects with g-parameters measuruments inside the nanocrystals defect centers intersity were determined. The results were presented in these thesis, have been showed good agrement with literature

PECVD tekniği ile büyütülmüş ince filmlerde oluşan Si, Ge ve SiGe nanokristallerin geçirgen elektron mikroskobu (TEM), raman, fotoışıma ve ESR spektroskopisi teknikleri ile incelenmesi

Tez (Doktora) -- Kırıkkale Üniversitesi78512

Farklı Oranlarda Tiyoüre Katkısının Nanoyapılı Kadmiyum Oksit (CdO) Filmlerin Fiziksel Özellikleri Üzerine Etkisinin İncelenmesi

Bu çalışmanın amacı nanoyapılı CdO filmlerin fiziksel özelliklerine tiyoüre konsantrasyonunun etkisini incelemektir. Bunun için farklı tiyoüre konsantrasyonlarındaki (%0, 0.5, 1 ve 2) dört seri CdO film soda lime cam altlık üzerine SILAR tekniği kullanılarak büyütüldü. Bu filmlerin morfolojileri, kristal yapıları ve optik özellikleri sırasıyla MM, XRD ve UV-visible spektroskopi teknikleri ile karakterize edilmiştir. MM görüntüleri tiyoüre konsantrasyonunun nanoyapılı CdO filmlerin yüzey morfolojilerini etkilediğini göstermektedir. CdO filmlerinin düzlemlerinin tercihli yöneliminin tiyoüre konsantrasyon değerine kuvvetle bağlı olduğunu XRD analizinden elde edilen sonuçlar ortaya koymaktadır. UV-vis analizinden, tiyoüre miktarı arttıkça CdO filmlerinin optik enerji bant aralığının (Eg) önce azaldığı ve daha sonra tekrar artan konsantrasyonla arttığı belirlenmiş ve bu enerji değerlerinin (2.25 - 2.13) eV aralığında olduğu bulunmuştur

Enhancement Physical Performance of Nanostructured CuO Films via Surfactant TX-100

In this study, we informed a systematic approach to obtain CuO films with and without TX-100 surfactant by the SILAR procedure. Morphological, structural and optical features of the CuO films were researched by metallurgical microscope, scanning electron microscopy, X-ray diffraction analysis and ultraviolet–visible spectrophotometry respectively with respect to concentrations of TX-100 agent. Metallurgical and scanning electron microscope photographs displayed that the morphology of the film surface was impressed by surfactant TX-100. X-ray diffraction patterns verified that all CuO films have monoclinic crystal lattice structure with preferential orientations of ( 11) and (111) planes. Ultraviolet–visible spectra demonstrated that the optical bandgap and transmittance values of the films were altered with TX-100 content