Consumer Propensity to Adopt Illicit Goods: Theory, Methods, and Results

The purpose of this study is to examine consumer propensity to adopt illicit goods. The adoption of illicit goods is a worldwide problem that undermines legitimate markets, funds criminal organizations, and harms the most vulnerable in society. International organizations, such as World Economic Forum, have called for the study of the demand of illicit products. Research is crucial to understanding the demand for these products and can contribute to public policy addressing this issue. This research uses two theoretical frameworks: The Theory of Planned Behavior and the Theory of Marketing Ethics. Using the Theory of Planned Behavior, research results suggest that subjective norms influence consumers’ propensity to adopt illicit goods. Using the Theory of Marketing Ethics, research on consumers’ ethical orientation found that both teleological and deontological orientations influence consumers’ ethical judgement and intention. Theoretical and methodological conclusions are derived, and managerial and policy implications are offered

Diagnosing early onset dementia and then what? A frustrating system of aftercare resources

Recent studies indicate that the prevalence of early onset dementia (EOD) is more common than it was once presumed. As such, and considering the substantial challenges EOD presents to the patient, caregivers, and health care providers, this study sought to investigate the mechanism of care delivered to these patients. A medical record chart review was conducted for 85 patients attending a memory disorder unit who initially presented to rule out EOD as a working diagnosis. The results suggest that while the majority of these patients received an extensive work-up and were heavily medicated, they remained at home, where they lacked adequate age-related services and could not be placed, despite the crippling caregiver burden. This manuscript is a platform to discuss our current system limitations in the care of these patients with an eye on new opportunities for this challenging group

Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system

We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8K and magnetic fields below 5T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant advance in technology has come about as a result of the unique properties of epitaxial graphene on SiC.Comment: 15 pages, 9 figure

Effectiveness reduction of nucleopolyhedrovirus against Chrysodeixis includens days after application in soybean plants.

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Strong-Coupling Theory of Rattling-Induced Superconductivity

In order to clarify the mechanism of the enhancement of superconducting transition temperature $T_{\rm c}$ due to anharmonic local oscillation of a guest ion in a cage composed of host atoms, i.e., {\it rattling}, we analyze the anharmonic Holstein model by applying the Migdal-Eliashberg theory. From the evaluation of the normal-state electron-phonon coupling constant, it is found that the strong coupling state is developed, when the bottom of a potential for the guest ion becomes wide and flat. Then, $T_{\rm c}$ is enhanced with the increase of the anharmonicity in the potential, although $T_{\rm c}$ is rather decreased when the potential becomes a double-well type due to very strong anharmonicity. From these results, we propose a scenario of anharmonicity-controlled strong-coupling tendency for superconductivity induced by rattling. We briefly discuss possible relevance of the present scenario with superconductivity in $\beta$-pyrochlore oxides.Comment: 8 pages, 6 figure

Stable organic static random access memory from a roll-to-roll compatible vacuum evaporation process

An organic Static Random Access Memory (SRAM) based on p-type, six-transistor cells is demonstrated. The bottom-gate top-contact thin film transistors composing the memory were fabricated on flexible polyethylene naphthalate substrates. All metallization layers and the p-type semiconductor dinaphtho[2,3-b:2',3'-f] thieno[3,2-b]thiophene were deposited by thermal evaporation. The gate dielectric was deposited in a vacuum roll-to-roll environment at a web speed of 25 m/min by flash-evaporation and subsequent plasma polymerisation of tripropyleneglycol diacrylate (TPGDA). Buffering the TPGDA with a polystyrene layer yields hysteresis-free transistor characteristics with turn-on voltage close to zero. The static transfer characteristic of diode-connected load inverters were also hysteresis-free with maximum gain >2 and noise margin ∼2.5 V. When incorporated into SRAM cells the time-constant for writing data into individual SRAM cells was less than 0.4 ms. Little change occurred in the magnitude of the stored voltages, when the SRAM was powered continuously from a −40 V rail for over 27 h testifying to the electrical stability of the threshold voltage of the individual transistors. Unencapsulated SRAM cells measured two months after fabrication showed no significant degradation after storage in a clear plastic container in normal laboratory ambient