Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence (PL) spectroscopy. A comprehensive model is suggested describing the evolution and interconversion of irradiation-induced point defects during annealing below 1000{\deg}C. The model proposes the EH4 and EH5 traps frequently found by DLTS to originate from the (+/0) charge transition level belonging to different configurations of the carbon antisite-carbon vacancy (CAV) complex. Furthermore, we show that the transformation channel between the silicon vacancy (VSi) and CAV is effectively blocked under n-type conditions, but becomes available in samples where the Fermi level has moved towards the center of the band gap due to irradiation-induced donor compensation. The annealing of VSi and the carbon vacancy (VC) is shown to be dominated by recombination with residual self-interstitials at temperatures of up to 400{\deg}C. Going to higher temperatures, a decay of the CAV pair density is reported which is closely correlated to a renewed increase of VC concentration. A conceivable explanation for this process is the dissociation of the CAV pair into separate carbon anitisites and VC defects. Lastly, the presented data supports the claim that the removal of free carriers in irradiated SiC is due to introduced compensating defects and not passivation of shallow nitrogen donors

Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions

The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis was varied by applying different growth temperatures (325–485 °C), affecting decomposition of the metal organic precursors. The microscopic identification of vacancy complexes was derived from a systematic variation in the defect balance in accordance with Zn/O supply trends.Peer reviewe

Effect of substrate proximity on luminescence yield from Si nanocrystals

The influence of the proximity of a high refractive index substrate on the luminescence of Si nanocrystals was investigated by time-integrated and time-resolved photoluminescence. The luminescence yield was found to be ∼2.5 times larger for emitters distanced from the substrate compared to those in proximity with the substrate, while luminescence decay measurements revealed only a slight increase in the luminescence lifetime (∼15%). Results are discussed in terms of local density of optical modes surrounding a pointlike light emitter with important implications for the collection efficiency of luminescence and the estimation of internal quantum efficiency for a quantum dot.Support for this work was provided by the Swedish Research Council VR and the Australian Research Council ARC

Testing ZnO based photoanodes for PEC applications

AbstractWe report on multi layered ZnCdO photoanode structures synthesized on c-A12O3 substrates using metal organic vapor phase epitaxy and covered with a thin TiO2 protective film using atomic layer deposition and pulsed laser deposition techniques. Structural, optical and photoelectrochemical properties of the multilayers were investigated systematically in connection with their potential application in the photolysis of water. X-ray diffraction and Rutherford backscattering techniques confirmed staggered arrangement and graded Cd content of the multilayers. Temperature-dependant photoluminescence revealed excitonic nature of a broad emission band representing combined band-edge emissions from the individual layers. The photocurrent was found to increase with decreasing thickness of the TiO2 protective layer

Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations

The carrier lifetime control over 150 μm thick 4H-SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (VC) related Z1/2 lifetime killer sites is reported. The defect developments upon typical SiC processing steps, such as high- and moderate-temperature anneals in the presence of a carbon cap, are monitored by combining electrical characterization techniques capable of VC depth-profiling, capacitance–voltage (CV) and deep-level transient spectroscopy (DLTS), with a novel all-optical approach of cross-sectional carrier lifetime profiling across 4H-SiC epilayer/substrate based on imaging time-resolved photoluminescence (TRPL) spectroscopy in orthogonal pump-probe geometry, which readily exposes in-depth efficacy of defect reduction and surface recombination effects. The lifetime control is realized by initial high-temperature treatment (1800 °C) to increase VC concentration to ≈1013 cm−3 level followed by a moderate-temperature (1500 °C) post-annealing of variable duration under C-rich thermodynamic equilibrium conditions. The post-annealing carried out for 5 h in effect eliminates VC throughout the entire ultra-thick epilayer. The reduction of VC-related Z1/2 sites is proven by a significant lifetime increase from 0.8 to 2.5 μs. The upper limit of lifetimes in terms of carrier surface leakage and the presence of other nonradiative recombination centers besides Z1/2, possibly related to residual impurities such as boron are discussed.publishedVersio

Galvanic restructuring of exsolved nanoparticles for plasmonic and electrocatalytic energy conversion

There is a growing need to control and tune nanoparticles (NPs) to increase their stability and effectiveness, especially for photo‐ and electrochemical energy conversion applications. Exsolved particles are well anchored and can be re‐shaped without changing their initial location and structural arrangement. However, this usually involves lengthy treatments and use of toxic gases. Here, the galvanic replacement/deposition method is used, which is simpler, safer, and leads to a wealth of new hybrid nanostructures with a higher degree of tailorability. The produced NiAu bimetallic nanostructures supported on SrTiO3 display exceptional activity in plasmon‐assisted photoelectrochemical (PEC) water oxidation reactions. In situ scanning transmission electron microscopy is used to visualize the structural evolution of the plasmonic bimetallic structures, while theoretical simulations provide mechanistic insight and correlate the surface plasmon resonance effects with structural features and enhanced PEC performance. The versatility of this concept in shifting catalytic modes to the hydrogen evolution reaction is demonstrated by preparing hybrid NiPt bimetallic NPs of low Pt loadings on highly reduced SrTiO3 supports. This powerful methodology enables the design of supported bimetallic nanomaterials with tunable morphology and catalytic functionalities through minimal engineering