54 research outputs found
Multiscale Modeling of Photovoltaic Devices
Renewable energy sources are among the most important ingredients for the development of a human society with sustainable environmental footprint. Among these, photovoltaics (PV) plays a key role and is therefore a field of intense research. The key parameters of a solar cell technology includes not only the energy conversion efficiency but also the operating lifetime and the overall cost of the energy produced. The latter must also be compared with other energy sources. The optimization of all these different aspects involves research across the whole photovoltaics value chain, starting from material science up to system optimization. Development of new solar cell device concepts is as important as search for new materials with more suitable optoelectronic properties or improved approaches for PV module design and integration in power distribution systems. This requires a comprehensive view on PV technology across all scales, from the atomic to the macroscopic and industrial scale. An important aspect of PV research and of development of new devices and systems, is theoretical modeling as an indispensable tool for both basic understanding and device optimization. This involves modeling also on all scales, from the microscopic properties of materials and nanostructures up to the behavior of PV modules. During the last decade, multiscale approaches have seen increasing interest for application in numerical simulation of electronic devices. In particular, modeling and understanding of advanced photovoltaic devices are expected to benefit from multiscale modeling, which allows describing consistently both macroscopic device behavior and local microscopic processes governing light absorption, loss mechanisms, carrier transport, and extraction. In fact, many advanced PV concepts rely on effects or contain structural features that are insufficiently described by standard numerical simulation approaches or semianalytic models, both regarding electronic and optical properties. The different length scales of the electronic and optical degrees of freedoms specifically lead to an intrinsic need for multiscale simulation, which is accentuated in many advanced photovoltaics concepts including nanostructured regions. Moreover, the active layers in solar cells generally require to have a certain thickness and a large overall device area, in order to absorb a sufficient amount of light. This special issue is an attempt to collect articles on modeling of PV devices and systems on all scales. It includes two experimental articles, one shedding some light on photoreflectance measurements when probing above the pump beam energy and the other discussing morphology in hybrid lead halide perovskite solar cells. One article describes numerical modeling of Cu2O on Si tandem cells based on a semiempirical approach. A further contribution shows a physics-based model of a quantum dot solar cell, including a comparison with experimental data. The remaining two papers deal with system relevant aspects, namely, power point tracking and electrical inverters for connecting PV modules or power plants with appliances
Piezoelectric tunability and topological insulator transition in a GaN/InN/GaN quantum-well device
Introduction to the OQE special issue on numerical simulation of optoelectronic devices NUSODâ12
Individually switchable InGaN/GaN nano-LED arrays as highly resolved illumination engines
GaN-based light emitting diodes (LEDs) have been shown to effectively operate down to nanoscale dimensions, which allows further downscaling the chip-based LED display technology from micro- to nanoscale. This brings up the question of what resolution limit of the illumination pattern can be obtained. We show two different approaches to achieve individually switchable nano-LED arrays. We evaluated both designs in terms of near-field spot size and optical crosstalk between neighboring pixels by using finite difference time domain (FDTD) simulations. The numerical results were compared with the performance data from a fabricated nano-LED array. The outcome underlines the influence of geometry of the LED array and materials used in contact lines on the final illumination spot size and shape
The real TiO2/HTM interface of solid-state dye solar cells: role of trapped states from a multiscale modelling perspective
We present a multiscale simulation of charge transport in a solid-state dye-sensitized solar cell, where the real morphology between TiO2 and the hole transport material is included
Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices
: The influence of self-assembled short-period superlattices (SPSLs) on the structural and optical properties of InGaN/GaN nanowires (NWs) grown by PAMBE on Si (111) was investigated by STEM, EDXS, ”-PL analysis and k·p simulations. STEM analysis on single NWs indicates that in most of the studied nanostructures, SPSLs self-assemble during growth. The SPSLs display short-range ordering of In-rich and In-poor InxGa1-xN regions with a period of 2-3 nm that are covered by a GaN shell and that transition to a more homogenous InxGa1-xN core. Polarization- and temperature-resolved PL analysis performed on the same NWs shows that they exhibit a strong parallel polarized red-yellow emission and a predominantly perpendicular polarized blue emission, which are ascribed to different In-rich regions in the nanostructures. The correlation between STEM, ”-PL and k·p simulations provides better understanding of the rich optical emission of complex III-N nanostructures and how they are impacted by structural properties, yielding the significant impact of strain on self-assembly and spectral emission
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Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance
Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the âOFFâ state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability
Pursuing the diffraction limit with nano-led scanning transmission optical microscopy
Recent research into miniaturized illumination sources has prompted the development of alternative microscopy techniques. Although they are still being explored, emerging nano-light-emitting-diode (nano-LED) technologies show promise in approaching the optical resolution limit in a more feasible manner. This work presents the exploration of their capabilities with two different prototypes. In the first version, a resolution of less than 1 ”m was shown thanks to a prototype based on an optically downscaled LED using an LED scanning transmission optical microscopy (STOM) technique. This research demonstrates how this technique can be used to improve STOM images by oversampling the acquisition. The second STOM-based microscope was fabricated with a 200 nm GaN LED. This demonstrates the possibilities for the miniaturization of on-chip-based microscopes.This work was partially supported by the European Unionâs Horizon 2020 research and innovation program under grant agreement No. 737089âChipScope
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