High Curie temperature Mn 5 Ge 3 thin films produced by non-diffusive reaction

Polycrystalline Mn 5 Ge 3 thin films were produced on SiO 2 using magnetron sputtering and reactive diffusion (RD) or non-diffusive reaction (NDR). In situ X-ray diffraction and atomic force microscopy were used to determine the layer structures, and magnetic force microscopy, superconducting quantum interference device and ferromagnetic resonance were used to determine their magnetic properties. RD-mediated layers exhibit similar magnetic properties as MBE-grown monocrystalline Mn 5 Ge 3 thin films, while NDR-mediated layers show magnetic properties similar to monocrystalline C-doped Mn 5 Ge 3 C x thin films with $0.1 \leq x \leq 0.2.$ NDR appears as a CMOS-compatible efficient method to produce good magnetic quality high-curie temperature Mn 5 Ge 3 thin films

Intensity correlations and mesoscopic fluctuations of diffusing photons in cold atoms

We study the angular correlation function of speckle patterns that result from multiple scattering of photons by cold atomic clouds. We show that this correlation function becomes larger than the value given by Rayleigh law for classical scatterers. These large intensity fluctuations constitute a new mesoscopic interference effect specific to atom-photon interactions, that could not be observed in other systems such as weakly disordered metals. We provide a complete description of this behavior and expressions that allow for a quantitative comparison with experiments.Comment: 4 pages, 2 figure

Antiferromagnetic phase of the gapless semiconductor V3Al

Discovering new antiferromagnetic compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The antiferromagnetic gapless semiconducting D03 phase of V3Al was successfully synthesized via arc-melting and annealing. The antiferromagnetic properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely-oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-third of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing antiferromagnetic elements.Comment: Accepted to Physics Review B on 02/23/1

OXIDATIVE-REFORMING OF METHANE AND PARTIAL OXIDATION OF METHANE REACTIONS OVER NiO/PrO2/ZrO2 CATALYSTS: EFFECT OF NICKEL CONTENT

In this work the behavior of NiO-PrO2-ZrO2 catalysts containing various nickel loadings was evaluated in the partial oxidation of methane and oxidative-reforming reactions of methane. The catalysts were characterized by X-Ray Diffraction Analysis (in situ-XRD), Temperature Programmed Reduction (H-2-TPR), Scanning Electron Microscopy (SEM/EDX) and Adsorption-Desorption of nitrogen (BET area). The reactions were carried out at 750 degrees C and 1 atm for 5 hours. The catalysts were studied with different nickel content: 0, 5, 10 and 15% (related to total weight of catalyst, wt%). In both reactions, the catalyst containing the mixture of the three oxides (NiO/PrO2/ZrO2) with 15% nickel (15NiPrZr catalyst) showed the best activity for the conversion of the reactants into Syngas and showed high selectivity for H-2 and CO. The results suggest that the promoter PrO2 and the Ni degrees centers are in a good proportion in the catalyst with 15% Ni. Our results showed that low nickel concentrations in the catalyst led to high metallic dispersion; however, very low nickel concentrations did not favor the methane transformation into Syngas. The catalyst containing only NiO/ZrO2 in the mixture was not sufficient for the catalysis. The presence of the promoter PrO2 was very important for the catalysis of the POM.Univ Fed Sao Paulo, Inst Mar, BR-11070100 Santos, SP, BrazilUniv Sao Paulo, Inst Quim Sao Carlos, BR-13560970 Sao Carlos, SP, BrazilUniv Fed Sao Carlos, Dept Engn Quim, BR-13565905 Sao Carlos, SP, BrazilUniv Fed Sao Paulo, Inst Mar, BR-11070100 Santos, SP, BrazilWeb of Scienc

The Effective Potential of the N=0* Yang-Mills Theory

We study the \N=4 SYM theory with SU(N) gauge group in the large N limit, deformed by giving equal mass to the four adjoint fermions. With this modification, a potential is dynamically generated for the six scalars in the theory, \phi^i. We show that the resulting theory is stable (perturbatively in the 't Hooft coupling), and that there are some indications that =0 is the vacuum of the theory. Using the AdS/CFT correspondence, we compare the results to the corresponding supergravity computation, i.e. brane probing a deformed AdS_5 x S^5 background, and we find qualitative agreement.Comment: 12 pages, 2 figures, version to appear in JHE