1,754 research outputs found
High Curie temperature Mn 5 Ge 3 thin films produced by non-diffusive reaction
Polycrystalline Mn 5 Ge 3 thin films were produced on SiO 2 using magnetron
sputtering and reactive diffusion (RD) or non-diffusive reaction (NDR). In situ
X-ray diffraction and atomic force microscopy were used to determine the layer
structures, and magnetic force microscopy, superconducting quantum interference
device and ferromagnetic resonance were used to determine their magnetic
properties. RD-mediated layers exhibit similar magnetic properties as MBE-grown
monocrystalline Mn 5 Ge 3 thin films, while NDR-mediated layers show magnetic
properties similar to monocrystalline C-doped Mn 5 Ge 3 C x thin films with
NDR appears as a CMOS-compatible efficient method to
produce good magnetic quality high-curie temperature Mn 5 Ge 3 thin films
Intensity correlations and mesoscopic fluctuations of diffusing photons in cold atoms
We study the angular correlation function of speckle patterns that result
from multiple scattering of photons by cold atomic clouds. We show that this
correlation function becomes larger than the value given by Rayleigh law for
classical scatterers. These large intensity fluctuations constitute a new
mesoscopic interference effect specific to atom-photon interactions, that could
not be observed in other systems such as weakly disordered metals. We provide a
complete description of this behavior and expressions that allow for a
quantitative comparison with experiments.Comment: 4 pages, 2 figure
Antiferromagnetic phase of the gapless semiconductor V3Al
Discovering new antiferromagnetic compounds is at the forefront of developing
future spintronic devices without fringing magnetic fields. The
antiferromagnetic gapless semiconducting D03 phase of V3Al was successfully
synthesized via arc-melting and annealing. The antiferromagnetic properties
were established through synchrotron measurements of the atom-specific magnetic
moments, where the magnetic dichroism reveals large and oppositely-oriented
moments on individual V atoms. Density functional theory calculations confirmed
the stability of a type G antiferromagnetism involving only two-third of the V
atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray
diffraction and transport measurements also support the antiferromagnetism.
This archetypal gapless semiconductor may be considered as a cornerstone for
future spintronic devices containing antiferromagnetic elements.Comment: Accepted to Physics Review B on 02/23/1
OXIDATIVE-REFORMING OF METHANE AND PARTIAL OXIDATION OF METHANE REACTIONS OVER NiO/PrO2/ZrO2 CATALYSTS: EFFECT OF NICKEL CONTENT
In this work the behavior of NiO-PrO2-ZrO2 catalysts containing various nickel loadings was evaluated in the partial oxidation of methane and oxidative-reforming reactions of methane. The catalysts were characterized by X-Ray Diffraction Analysis (in situ-XRD), Temperature Programmed Reduction (H-2-TPR), Scanning Electron Microscopy (SEM/EDX) and Adsorption-Desorption of nitrogen (BET area). The reactions were carried out at 750 degrees C and 1 atm for 5 hours. The catalysts were studied with different nickel content: 0, 5, 10 and 15% (related to total weight of catalyst, wt%). In both reactions, the catalyst containing the mixture of the three oxides (NiO/PrO2/ZrO2) with 15% nickel (15NiPrZr catalyst) showed the best activity for the conversion of the reactants into Syngas and showed high selectivity for H-2 and CO. The results suggest that the promoter PrO2 and the Ni degrees centers are in a good proportion in the catalyst with 15% Ni. Our results showed that low nickel concentrations in the catalyst led to high metallic dispersion; however, very low nickel concentrations did not favor the methane transformation into Syngas. The catalyst containing only NiO/ZrO2 in the mixture was not sufficient for the catalysis. The presence of the promoter PrO2 was very important for the catalysis of the POM.Univ Fed Sao Paulo, Inst Mar, BR-11070100 Santos, SP, BrazilUniv Sao Paulo, Inst Quim Sao Carlos, BR-13560970 Sao Carlos, SP, BrazilUniv Fed Sao Carlos, Dept Engn Quim, BR-13565905 Sao Carlos, SP, BrazilUniv Fed Sao Paulo, Inst Mar, BR-11070100 Santos, SP, BrazilWeb of Scienc
The Effective Potential of the N=0* Yang-Mills Theory
We study the \N=4 SYM theory with SU(N) gauge group in the large N limit,
deformed by giving equal mass to the four adjoint fermions. With this
modification, a potential is dynamically generated for the six scalars in the
theory, \phi^i. We show that the resulting theory is stable (perturbatively in
the 't Hooft coupling), and that there are some indications that =0 is
the vacuum of the theory. Using the AdS/CFT correspondence, we compare the
results to the corresponding supergravity computation, i.e. brane probing a
deformed AdS_5 x S^5 background, and we find qualitative agreement.Comment: 12 pages, 2 figures, version to appear in JHE
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