Investigation In The Convergence Of The Evanescent Model And The Polynomial Model Including Effective Conducting Path Effect (ECPE): Applied To The Submicronic SG FD SOI MOSFET

we are presenting a convergence study of the evanescent model and the polynomial model with and without the Effective Conduction Path Effect. These analytic models of the electric potential in the channel are used to analyze the short channel effect for the submicronic SG FD SOI MOSFET. Hereby, we figure out the 2D Poisson equation and we analytically write the surface potential, the threshold voltage, the DIBL and the sub-threshold slope. The results show a good agreement of the evanescent model and the polynomial model including the Effective Conduction Path Effect with measures done by simulation tools.We are presenting a convergence study of the evanescent model and the polynomial model with and without the Effective Conduction Path Effect. These analytic models of the electric potential in the channel are used to analyze the short channel effect for the submicronic SG FD SOI MOSFET. Hereby, we figure out the 2D Poisson equation and we analytically write the surface potential, the threshold voltage, the DIBL and the sub-threshold slope. The results show a good agreement of the evanescent model and the polynomial model including the Effective Conduction Path Effect with measures done by simulation tools

Impact Of The Effective Conducting Path Effect (ECPE) On The Convergence Of The Evanescent And The Polynomial Models: Applied To The Submicronic MOSFET

We present a comparative study of submicronic MOSFET characteristics using analytic models of electrostatic potential in the channel. We are particularly interested in the surface potential, threshold voltage, swing and DIBL using the polynomial model with and without ECPE and the evanescent model to analytically express the electrostatic potential. The results show a good agreement between the polynomial model including ECPE, the evanescent model and measures done by simulation tools.We present a comparative study of submicronic MOSFET characteristics using analytic models of electrostatic potential in the channel. We are particularly interested in the surface potential, threshold voltage, swing and DIBL using the polynomial model with and without ECPE and the evanescent model to analytically express the electrostatic potential. The results show a good agreement between the polynomial model including ECPE, the evanescent model and measures done by simulation tools

Surface potential modeling of dual metal gate-graded channel?dual oxide thickness with two dielectric constant different of surrounding gate MOSFET

An Analytical study for the surface potential, threshold voltage and Subthreshold swing (SS) of Dual-metal Gate Graded channel and Dual Oxide Thickness with two dielectric constant different cylindrical gate surrounding?gate (DMG-GC-DOTTDCD) metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed to investigate short-channel effects (SCEs). The performance of the modified structure was studied by developing physics-based analytical models for the surface potential, threshold voltage shift, and Subthreshold swing. It is shown that the novel MOSFET could significantly reduce threshold voltage shift and Subthreshold swing, can also provides improved electron transport and reduced short channel effects (SCE). Results reveal that the DMG-GC-DOTTDCD devices with different dielectric constant offer superior characteristics as compared to DMG-GC-DOT devices. The derived analytical models agree well with simulation by ATLAS

Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

Indium tin oxide (ITO) is a well-known n-type degenerate semiconductor with a wide variety of electronic and optoelectronic applications. Herein ITO is utilized as a photocathode material in p-type dye-sensitized solar cells in place of the commonly applied and highly colored nickel oxide (NiO) semiconductor. The application of mesoporous ITO photocathodes, [Fe(acac)3] 0/ - as a redox mediator and a new organic dye afforded an impressive energy conversion efficiency of 1.96 ± 0.12%. Comparative transient absorption spectroscopic studies indicated that the recombination rate at the ITO-electrolyte interface is two orders of magnitude faster than that of NiO. Analysis of the operation mechanism of the ITO-based devices with ultraviolet photon spectroscopy and photoelectron spectroscopy in air showed that ITO exhibits a significant local density of states arising below - 4.8 eV, which enables electron transfer to occur from the ITO to the excited dye, thus giving rise to the sustained photocathodic current