Quantum mechanical scattering investigation of the thermionic and field induced emission components of the dark current in quantum well infrared photodetectors

The thermionic emission and field induced emission components of the dark current in quantum well infrared photodetectors are investigated using a quantum mechanical scattering theory approach. Calculations are performed for an experimentally reported device. Using this as a standard, the device dimensions were altered in order to increase its detection wavelength to cover the mid- (MIR) and far-infrared (FIR) regions of the spectrum. The behavior of the scattering mechanisms that contribute to the thermionic emission and field induced emission components were studied. The results highlight the change in the dominating scattering mediator across the MIR and FIR bands. © 2002 American Institute of Physics

Advanced Infrared Technology and Applications

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16th International Workshop on Advanced Infrared Technology and Applications (AITA 2021)

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InAsSb-Based Infrared Photodetectors: Thirty Years Later On

In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies

Mercury Cadmium Telluride Photodiodes at the Beginning of the Next Millennium (Review Paper)

"At present, efforts in infrared (IR) detector research are directed towards improving the performance of large electronically scanned arrays and to obtain higher operating temperature of detectors. Another aim is to make IR detectors cheaper and more convenient to use. Mercury cadmium telluride (HgCdTe) ternary alloy system maintains its privileged position in IR detector technology. In this paper, the recent progress in HgCdTe photovoltaic detectors is described from the historical point of view. Discussion is mainly on homo junction and heterojunction photodiodes !and their applications in large focal plane arrays and two-colour detectors. Also, an outlook on near-future trends in IR technologies is presented

Infrared and terahertz detectors

This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays

Infrared detectors

This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukrain

Van der Waals materials for HOT infrared detectors : a review

In the last decade several papers have announced usefulness of two-dimensional materials for high operating temperature photodetectors covering long wavelength infrared spectral region. Transition metal dichalcogenide photodetectors, such as PdSe₂/MoS₂ and WS₂/HfS₂ heterojunctions, have been shown to achieve record detectivities at room temperature (higher than HgCdTe photodiodes). Under these circumstances, it is reasonable to consider the advantages and disadvantages of two-dimensional materials for infrared detection. This review attempts to answer the question thus posed

2D Materials in Infrared Detector Family

The paper compares two-dimensional (2D) material detectors performance with traditionally and commercially available ones operating in high temperature conditions. The most effective single graphene detectors are THz detectors which utilize plasma rectification phenomena in FETs. Most of 2D layered semiconducting material photodetectors operate at the visible and near-infrared regions and generally their high sensitivity does not coincide with a fast response time, which limits real detector functions