Fluorescence and Electroluminescence of J-Aggregated Polythiophene Monolayers on Hexagonal Boron Nitride

The photophysics of a semiconducting polymer is manipulated through molecular self-assembly on an insulating surface. Adsorption of polythiophene (PT) monolayers on hexagonal boron nitride (hBN) leads to a structurally induced planarization and a rebalancing of inter- and intrachain excitonic coupling. This conformational control results in a dominant 0–0 photoluminescence peak and a reduced Huang–Rhys factor, characteristic of J-type aggregates, and optical properties which are significantly different to both PT thin films and single polymer strands. Adsorption on hBN also provides a route to explore electroluminescence from PT monolayers though incorporation into hybrid van der Waals heterostructures whereby the polymer monolayer is embedded within a hBN tunnel diode. In these structures we observe up-converted singlet electroluminescence from the PT monolayer, with an excitation mechanism based upon inelastic electron scattering. We argue that surface adsorption provides a methodology for the study of fundamental optoelectronic properties of technologically relevant polymers

Highly responsive UV-photodetectors based on single electrospun TiO2 nanofibres

In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the dark give a conductivity above 2*10^-5 S, which increases up to 8*10^-5 S in vacuum. Photocurrent measurements under UV-irradiation show high sensitivity (responsivity of 90 A/W for 375 nm wavelength) and a response time to illumination of ~ 5 s, which is superior to state-of-the-art TiO2-based UV photodetectors. Both responsivity and response speed are higher in air than in vacuum, due to oxygen adsorbed on the TiO2 surface which traps photoexcited free electrons in the conduction band, thus reducing the recombination processes. The photodetectors are sensitive to light polarization, with an anisotropy ratio of 12%. These results highlight the interesting combination of large surface area and low 1D transport resistance in electrospun TiO2 fibres. The simplicity of the sol-gel/electrospinning synthesis method, combined with a fast response and high responsivity makes them attractive candidates for UV-photodetection in ambient conditions. We anticipate their high (photo) conductance is also relevant for photocatalysis and dye-sensitized solar cells.Comment: 29 pages, 5 figures in the main text, 9 figures in the Supporting Information. in J. Mater. Chem. C, 201

Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells

Practical device architectures are proposed here for the implementation of three-terminal heterojunction bipolar transistor solar cells (3T-HBTSCs). These photovoltaic devices, which have a potential efficiency similar to that of multijunction cells, exhibit reduced spectral sensitivity compared with monolithically and series-connected tandem solar cells. In addition, the simplified n-p-n (or p-np) structure does not require the use of tunnel junctions. In this framework, four architectures are proposed and discussed in this paper: 1) one in which the top cell is based on silicon and the bottom cell is based on a heterojunction between silicon and III-V nanomaterials; 2) one in which the top cell is made of amorphous silicon and the bottom cell is made of an amorphous silicon-silicon heterojunction; 3) one based on the use of III-V semiconductors aimed at space applications; and 4) one in which the top cell is based on a perovskite material and the bottom cell is made of a perovskitesilicon heterostructure

Design study of a nanowire three-terminal heterojunction bipolar transistor solar cell

We present an optical design study on a nanowire heterojunction bipolar transistor solar cell. The simple structure of this novel architecture of double-junction solar cell, allows for independent power extraction from the two junctions and makes the nanowire growth easier than in current-matched double-junction solar cells as there is no need for tunnel junctions and only three main semiconductor regions must be grown. We show that the nanowire heterojunction bipolar transistor solar cell design results in an optical performance similar to comparable planar devices, with the nanowires only covering 1/3 of the substrate area. Furthermore, it allows for the growth of lattice-mismatched semiconductor combinations, which increases the detailed balance efficiency limit

Design of an indium arsenide cell for near-field thermophotovoltaic devices

48 pages; 6 figures; 4 tables; 2 supplementary figuresAn indium arsenide photovoltaic cell with gold front contacts is designed for use in a near-field thermophotovoltaic (NF-TPV) device consisting of millimeter-size surfaces separated by a nanosize vacuum gap. The device operates with a doped silicon radiator maintained at a temperature of 800 K. The architecture of the photovoltaic cell, including the emitter and base thicknesses, the doping level of the base, and the front contact grid parameters, are optimized for maximizing NF-TPV power output. This is accomplished by solving radiation and charge transport in the cell via fluctuational electrodynamics and the minority charge carrier continuity equations, in addition to accounting for the shading losses due to the front contacts and additional series resistance losses introduced by the front contacts and the substrate. The results reveal that these additional loss mechanisms negatively affect NF-TPV performance in a non-negligible manner, and that the maximum power output is a trade-off between shading losses and series resistance losses introduced by the front contacts. For instance, when the cell is optimized for a 1 x 1 mm2 device operating at a vacuum gap of 100 nm, the losses introduced by the front contacts reduce the maximum power output by a factor of ~ 2.5 compared to the idealized case when no front contact grid is present. If the optimized grid for the 1 x 1 mm2 device is scaled up for a 5 x 5 mm2 device, the maximum power output is only increased by a factor of ~ 1.08 with respect to the 1 x 1 mm2 case despite an increase of the surface area by a factor of 25. This work demonstrates that the photovoltaic cell in a NF-TPV device must be designed not only for a specific radiator temperature, but also for specific gap thickness and device surface area

Potential of the three-terminal heterojunction bipolar transistor solar cell for space applications

Multi-Terminal multi-junction solar cells (MJSC) offer higher efficiency potential than series connected (two-Terminal) ones. In addition, for terrestrial applications, the efficiency of multi-Terminal solar cells is less sensitive to solar spectral variations than the two-Terminal series-connected one. In space, generally, cells are always illuminated with AM0 spectrum and no impact is expected from spectral variations. Still, in space, the multi-Terminal approach offers some advantages in comparison with the series-connected architecture approach derived from a higher end of life (EOL) efficiency. In this work we review the potential of multi-Terminal solar cells for achieving extended EOL efficiencies with emphasis in the potential of the three-Terminal heterojunction bipolar transistor solar cell, a novel multi-Terminal MJSC architecture with a simplified structure not requiring, for example, tunnel junctions

Thermophotovoltaic devices for solar and thermal energy conversion

International audienc

SbSeI and SbSeBr micro-columnar solar cells by a novel high pressure-based synthesis process

Van der Waals chalcogenides and chalcohalides have the potential to become the next thin film PV breakthrough, owing to the earth-abundancy and non-toxicity of their components, and their stability, high absorption coefficient and quasi-1D structure, which leads to enhanced electrical anisotropic properties when the material is oriented in a specific crystalline direction. However, quasi-1D semiconductors beyond Sb2(S,Se)3, such as SbSeX chalcohalides, have been scarcely investigated for energy generation applications, and rarely synthesised by physical vapor deposition methodologies, despite holding the promise of widening the bandgap range (opening the door to tandem or semi-transparent devices), and showing enticing new properties such as ferroelectric behaviour and defect-tolerant nature. In this work, SbSeI and SbSeBr micro-columnar solar cells have been obtained for the first time by an innovative methodology based on the selective halogenation of Sb2Se3 thin films at pressure above 1 atm. It is shown that by increasing the annealing temperature and pressure, the height and density of the micro-columnar structures grows monotonically, resulting in SbSeI single-crystal columns up to 30 µm, and tuneable morphology. In addition, solar cell prototypes with substrate configuration have shown remarkable Voc values above 550 mV and 1.8 eV bandgap.Peer ReviewedPostprint (published version

Sub-Bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells

In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage.Peer ReviewedPostprint (published version