900 research outputs found
ΠΡΡΠΎΠΊΠΎΡΠ°ΡΡΠΎΡΠ½ΡΠΉ ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡ Ρ ΡΠ°Π±ΠΎΡΠΈΠΌ Π²Π΅ΡΠ΅ΡΡΠ²ΠΎΠΌ Β«ΠΈΠ·ΠΎΠ»ΡΡΠΎΡ Π½Π΅Π»Π΅Π³ΠΈΡΠΎΠ²Π°Π½Π½ΡΠΉ ΠΊΡΠ΅ΠΌΠ½ΠΈΠΉ ΠΈΠ·ΠΎΠ»ΡΡΠΎΡΒ»
The study of the parameters of capacitors with various working substances is of interest for the design and creation of electronic elements, in particular for the development of high-frequency phase-shifting circuits.The purpose of the work is to calculate the high-frequency capacitance of a capacitor with the working substance "insulator-undoped silicon-insulator" at different applied to the capacitor direct current (DC) voltages, measuring signal frequencies and temperatures.A model of such the capacitor is proposed, in which 30 Β΅m thick layer of undoped (intrinsic) crystalline silicon (i-Si) is separated from each of the capacitor electrodes by 1 Β΅m thick insulator layer (silicon dioxide).The dependences of the capacitor capacitance on the DC electrical voltage U on metal electrodes at zero frequency and at the measuring signal frequency of 1 MHz at absolute temperatures T = 300 and 400 K are calculated. It is shown that the real part of the capacitor capacitance increases monotonically, while the imaginary part is negative and non-monotonically depends on U at the temperature T = 300 K. An increase in the real part of the capacitor capacitance up to the geometric capacitance of oxide layers with increasing temperature is due to a decrease in the electrical resistance of i-Si layer. As a result, with an increase in temperature up to 400 K, the real and imaginary parts of the capacitance take constant values independent of U. The capacitance of i-Si layer with an increase in both temperature T and voltage U is shunted by the electrical conductivity of this layer. The phase shift is determined for a sinusoidal electrical signal with a frequency of 0.3, 1, 10, 30, 100, and 300 MHz applied to the capacitor at temperatures 300 and 400 K.ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡΠΎΠ² Ρ ΡΠ°Π·Π»ΠΈΡΠ½ΡΠΌΠΈ ΡΠ°Π±ΠΎΡΠΈΠΌΠΈ Π²Π΅ΡΠ΅ΡΡΠ²Π°ΠΌΠΈ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»ΡΠ΅Ρ ΠΈΠ½ΡΠ΅ΡΠ΅Ρ Π΄Π»Ρ ΠΏΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΈ ΡΠΎΠ·Π΄Π°Π½ΠΈΡ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΈΠΊΠΈ, Π² ΡΠ°ΡΡΠ½ΠΎΡΡΠΈ Π΄Π»Ρ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠΈ Π²ΡΡΠΎΠΊΠΎΡΠ°ΡΡΠΎΡΠ½ΡΡ
ΡΠ°Π·ΠΎΡΠ΄Π²ΠΈΠ³Π°ΡΡΠΈΡ
ΡΠ΅ΠΏΠ΅ΠΉ.Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡ ΡΠ°ΡΡΡΠΈΡΠ°ΡΡ Π²ΡΡΠΎΠΊΠΎΡΠ°ΡΡΠΎΡΠ½ΡΡ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΡΡ Π΅ΠΌΠΊΠΎΡΡΡ ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡΠ° Ρ ΡΠ°Π±ΠΎΡΠΈΠΌ Π²Π΅ΡΠ΅ΡΡΠ²ΠΎΠΌ Β«ΠΈΠ·ΠΎΠ»ΡΡΠΎΡ Π½Π΅Π»Π΅Π³ΠΈΡΠΎΠ²Π°Π½Π½ΡΠΉ ΠΊΡΠ΅ΠΌΠ½ΠΈΠΉ ΠΈΠ·ΠΎΠ»ΡΡΠΎΡΒ» ΠΏΡΠΈ ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΠΏΠΎΠ΄Π°Π²Π°Π΅ΠΌΡΡ
Π½Π° ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡ ΠΏΠΎΡΡΠΎΡΠ½Π½ΡΡ
Π½Π°ΠΏΡΡΠΆΠ΅Π½ΠΈΡΡ
, ΡΠ°ΡΡΠΎΡΠ°Ρ
ΠΈΠ·ΠΌΠ΅ΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΈΠ³Π½Π°Π»Π° ΠΈ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ°Ρ
.ΠΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π° ΠΌΠΎΠ΄Π΅Π»Ρ ΡΠ°ΠΊΠΎΠ³ΠΎ ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡΠ°, Π² ΠΊΠΎΡΠΎΡΠΎΠΉ ΡΠ»ΠΎΠΉ Π½Π΅Π»Π΅Π³ΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ (ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΠΎΠ³ΠΎ) ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ (i-Si) ΡΠΎΠ»ΡΠΈΠ½ΠΎΠΉ 30 ΠΌΠΊΠΌ ΠΎΡΠ΄Π΅Π»Π΅Π½ ΠΎΡ ΠΊΠ°ΠΆΠ΄ΠΎΠ³ΠΎ ΠΈΠ· ΡΠ»Π΅ΠΊΡΡΠΎΠ΄ΠΎΠ² ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡΠ° ΡΠ»ΠΎΠ΅ΠΌ ΠΈΠ·ΠΎΠ»ΡΡΠΎΡΠ° (Π΄ΠΈΠΎΠΊΡΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ) ΡΠΎΠ»ΡΠΈΠ½ΠΎΠΉ 1 ΠΌΠΊΠΌ.Π Π°ΡΡΡΠΈΡΠ°Π½Ρ Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΠΈ Π΅ΠΌΠΊΠΎΡΡΠΈ ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡΠ° ΠΎΡ ΠΏΠΎΡΡΠΎΡΠ½Π½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ Π½Π°ΠΏΡΡΠΆΠ΅Π½ΠΈΡ U Π½Π° ΠΌΠ΅ΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ»Π΅ΠΊΡΡΠΎΠ΄Π°Ρ
Π½Π° Π½ΡΠ»Π΅Π²ΠΎΠΉ ΡΠ°ΡΡΠΎΡΠ΅ ΠΈ Π½Π° ΡΠ°ΡΡΠΎΡΠ΅ ΠΈΠ·ΠΌΠ΅ΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΈΠ³Π½Π°Π»Π° 1 ΠΠΡ ΠΏΡΠΈ Π°Π±ΡΠΎΠ»ΡΡΠ½ΡΡ
ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ°Ρ
T = 300 ΠΈ 400 Π. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ Π΄Π΅ΠΉΡΡΠ²ΠΈΡΠ΅Π»ΡΠ½Π°Ρ ΡΠ°ΡΡΡ Π΅ΠΌΠΊΠΎΡΡΠΈ ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡΠ° ΠΌΠΎΠ½ΠΎΡΠΎΠ½Π½ΠΎ Π²ΠΎΠ·ΡΠ°ΡΡΠ°Π΅Ρ, Π° ΠΌΠ½ΠΈΠΌΠ°Ρ ΡΠ°ΡΡΡ ΠΎΡΡΠΈΡΠ°ΡΠ΅Π»ΡΠ½Π° ΠΈ Π½Π΅ΠΌΠΎΠ½ΠΎΡΠΎΠ½Π½ΠΎ Π·Π°Π²ΠΈΡΠΈΡ ΠΎΡ U ΠΏΡΠΈ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ΅ T = 300 Π. Π£Π²Π΅Π»ΠΈΡΠ΅Π½ΠΈΠ΅ Π΄Π΅ΠΉΡΡΠ²ΠΈΡΠ΅Π»ΡΠ½ΠΎΠΉ ΡΠ°ΡΡΠΈ Π΅ΠΌΠΊΠΎΡΡΠΈ ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡΠ° Π΄ΠΎ Π³Π΅ΠΎΠΌΠ΅ΡΡΠΈΡΠ΅ΡΠΊΠΎΠΉ Π΅ΠΌΠΊΠΎΡΡΠΈ ΠΎΠΊΡΠΈΠ΄Π½ΡΡ
ΡΠ»ΠΎΠ΅Π² ΠΏΡΠΈ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΠΈ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΡ ΠΎΠ±ΡΡΠ»ΠΎΠ²Π»Π΅Π½ΠΎ ΡΠΌΠ΅Π½ΡΡΠ΅Π½ΠΈΠ΅ΠΌ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΡ ΡΠ»ΠΎΡ i-Si. ΠΡΠ»Π΅Π΄ΡΡΠ²ΠΈΠ΅ ΡΡΠΎΠ³ΠΎ Ρ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΠ΅ΠΌ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΡ Π΄ΠΎ 400 Π Π΄Π΅ΠΉΡΡΠ²ΠΈΡΠ΅Π»ΡΠ½Π°Ρ ΠΈ ΠΌΠ½ΠΈΠΌΠ°Ρ ΡΠ°ΡΡΠΈ Π΅ΠΌΠΊΠΎΡΡΠΈ ΠΏΡΠΈΠ½ΠΈΠΌΠ°ΡΡ ΠΏΠΎΡΡΠΎΡΠ½Π½ΡΠ΅ Π·Π½Π°ΡΠ΅Π½ΠΈΡ, Π½Π΅Π·Π°Π²ΠΈΡΡΡΠΈΠ΅ ΠΎΡ U. ΠΠΌΠΊΠΎΡΡΡ ΡΠ»ΠΎΡ i-Si ΠΏΡΠΈ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΠΈ ΠΊΠ°ΠΊ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΡ T, ΡΠ°ΠΊ ΠΈ Π½Π°ΠΏΡΡΠΆΠ΅Π½ΠΈΡ U ΡΡΠ½ΡΠΈΡΡΠ΅ΡΡΡ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΏΡΠΎΠ²ΠΎΠ΄ΠΈΠΌΠΎΡΡΡΡ ΡΡΠΎΠ³ΠΎ ΡΠ»ΠΎΡ. ΠΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ ΡΠ΄Π²ΠΈΠ³ ΡΠ°Π· Π΄Π»Ρ ΡΠΈΠ½ΡΡΠΎΠΈΠ΄Π°Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠΈΠ³Π½Π°Π»Π° Ρ ΡΠ°ΡΡΠΎΡΠΎΠΉ 0,3; 1; 10; 30; 100 ΠΈ 300 ΠΠΡ, ΠΏΠΎΠ΄Π°Π²Π°Π΅ΠΌΠΎΠ³ΠΎ Π½Π° ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡ ΠΏΡΠΈ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ°Ρ
300 ΠΈ 400 Π
High-Frequency Capacitor with Working Substance "InsulatorβUndoped SiliconβInsulator"
The study of the parameters of capacitors with various working substances is of interest for the design
and creation of electronic elements, in particular for the development of high-frequency phase-shifting circuits.
The purpose of the work is to calculate the high-frequency capacitance of a capacitor with the working
substance insulator undoped silicon insulator at different applied to the capacitor direct current (DC)
voltages, measuring signal frequencies and temperatures.
A model of such the capacitor is proposed, in which 30 Β΅m thick layer of undoped (intrinsic) crystalline
silicon (i-Si) is separated from each of the capacitor electrodes by 1 Β΅m thick insulator layer (silicon
dioxide).
The dependences of the capacitor capacitance on the DC electrical voltage U on metal electrodes at
zero frequency and at the measuring signal frequency of 1 MHz at absolute temperatures T = 300 and
400 K are calculated. It is shown that the real part of the capacitor capacitance increases monotonically,
while the imaginary part is negative and non-monotonically depends on U at the temperature T = 300 K. An
increase in the real part of the capacitor capacitance up to the geometric capacitance of oxide layers with
increasing temperature is due to a decrease in the electrical resistance of i-Si layer. As a result, with an increase
in temperature up to 400 K, the real and imaginary parts of the capacitance take constant values independent
of U. The capacitance of i-Si layer with an increase in both temperature T and voltage U is
shunted by the electrical conductivity of this layer. The phase shift is determined for a sinusoidal electrical
signal with a frequency of 0.3, 1, 10, 30, 100, and 300 MHz applied to the capacitor at temperatures 300
and 400 K
Numerical Modeling of the Dispersed Particles Distribution and FIxation during the Centrifugal Casting with Vertical and Horizontal Rotation Axes
Numerical modeling of the dispersed particles distribution in the production billets has been carried out. Centrifugal casting machine with vertical and horizontal rotation axes has been used. Hardening particles distribution information has been obtained. Mathematical apparatus has been developed
A METHOD OF MODIFICATION SURFACE MOULD IN GASIFICATED CASTING TO PURPOSE INCREASE WEAR RESISTANCE
The article suggests a method for increasing the wear resistance of a casting surface by introducing a pre-prepared insert with dispersed tungsten and titanium particles. The method makes it possible to obtain an extended wear-resistant layer in a metallic casting.Π Π°Π±ΠΎΡΠ° Π²ΡΠΏΠΎΠ»Π½Π΅Π½Π° Π² ΡΠ°ΠΌΠΊΠ°Ρ
Π²ΡΠΏΠΎΠ»Π½Π΅Π½ΠΈΡ Π³ΡΠ°Π½ΡΠ° ΠΡΠ΅Π·ΠΈΠ΄Π΅Π½ΡΠ° Π Π€ ΠΏΠΎ Π΄ΠΎΠ³ΠΎΠ²ΠΎΡΡ β14.Y30.18.2874-ΠΠ
Π‘Ρ Π΅ΠΌΠ° ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ° ΠΠ΅Π»ΡΡΡΠ΅ Π½Π° ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠ°Ρ Ρ ΠΏΡΡΠΆΠΊΠΎΠ²ΡΠΌ ΠΏΠ΅ΡΠ΅Π½ΠΎΡΠΎΠΌ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΏΠΎ Π΄Π΅ΡΠ΅ΠΊΡΠ°ΠΌ
The study of thermoelectric properties of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant Peltier elements. In this case, the spectrum of energy levels of hydrogen-like impurities and intrinsic point defects in the band gap (energy gap) of crystal plays an important role.The purpose of this work is to analyze the features of the single-electron band model of semiconductors with hopping electron migration both via atoms of hydrogen-like impurities and via their own point triplecharged intrinsic defects in the c- and v-bands, as well as to search for the possibility of their use in the Peltier element in the temperature range, when the transitions of electrons and holes from impurity atoms and/or intrinsic defects to the c- and v-bands can be neglected.For Peltier elements with electron hopping migration we propose: (i) an h-diode containing |d1)and |d2)-regions with hydrogen-like donors of two types in the charge states (0) and (+1) and compensating them hydrogen-like acceptors in the charge state (β1); (ii) a homogeneous semiconductor containing intrinsic t-defects in the charge states (β1, 0, +1), as well as ions of donors and acceptors to control the distribution of t-defects over the charge states. The band diagrams of the proposed Peltier elements in equilibrium and upon excitation of a stationary hopping electric current are analyzed.A model of the h-diode containing hydrogen-like donors of two types |d1) and |d2) with hopping migration of electrons between them for 50 % compensation by acceptors is considered. It is shown that in the case of the reverse (forward) electrical bias of the diode, the cooling (heating) of the region of the electric double layer between |d1)and |d2)-regions is possible.A Peltier element based on a semiconductor with point t-defects is considered. It is assumed that the temperature and the concentration of ions of hydrogen-like acceptors and donors are to assure all t-defects to be in the charge state (0). It is shown that in such an element it is possible to cool down the metal-semiconductor contact under a negative electric potential and to heat up the opposite contact under a positive potential.ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ΅ΡΠΌΠΎΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ² ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ² Ρ Π΄Π΅ΡΠ΅ΠΊΡΠ°ΠΌΠΈ ΡΡΡΡΠΊΡΡΡΡ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»ΡΠ΅Ρ ΠΏΡΠ°ΠΊΡΠΈΡΠ΅ΡΠΊΠΈΠΉ ΠΈΠ½ΡΠ΅ΡΠ΅Ρ ΠΏΡΠΈ ΡΠΎΠ·Π΄Π°Π½ΠΈΠΈ ΡΠ°Π΄ΠΈΠ°ΡΠΈΠΎΠ½Π½ΠΎ-ΡΡΠΎΠΉΠΊΠΈΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΠΠ΅Π»ΡΡΡΠ΅. ΠΡΠΈ ΡΡΠΎΠΌ Π²Π°ΠΆΠ½ΡΡ ΡΠΎΠ»Ρ ΠΈΠ³ΡΠ°Π΅Ρ ΡΠΏΠ΅ΠΊΡΡ ΡΡΠΎΠ²Π½Π΅ΠΉ ΡΠ½Π΅ΡΠ³ΠΈΠΈ Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΡ
ΠΏΡΠΈΠΌΠ΅ΡΠ΅ΠΉ ΠΈ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΡΡ
ΡΠΎΡΠ΅ΡΠ½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ² Π² ΡΠ½Π΅ΡΠ³Π΅ΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΡΠ΅Π»ΠΈ (Π·Π°ΠΏΡΠ΅ΡΡΠ½Π½ΠΎΠΉ Π·ΠΎΠ½Π΅) ΠΊΡΠΈΡΡΠ°Π»Π»Π°.Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡ Π°Π½Π°Π»ΠΈΠ· ΠΎΡΠΎΠ±Π΅Π½Π½ΠΎΡΡΠ΅ΠΉ ΠΎΠ΄Π½ΠΎΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠΉ Π·ΠΎΠ½Π½ΠΎΠΉ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ² Ρ ΠΏΡΡΠΆΠΊΠΎΠ²ΠΎΠΉ ΠΌΠΈΠ³ΡΠ°ΡΠΈΠ΅ΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΊΠ°ΠΊ ΠΏΠΎ Π°ΡΠΎΠΌΠ°ΠΌ Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΡ
ΠΏΡΠΈΠΌΠ΅ΡΠ΅ΠΉ, ΡΠ°ΠΊ ΠΈ ΠΏΠΎ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΡΠΌ ΡΠΎΡΠ΅ΡΠ½ΡΠΌ ΡΡΡΡ
Π·Π°ΡΡΠ΄Π½ΡΠΌ Π΄Π΅ΡΠ΅ΠΊΡΠ°ΠΌ, Π° ΡΠ°ΠΊΠΆΠ΅ ΠΏΠΎΠΈΡΠΊ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΠΈ ΠΈΡ
ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΡ Π² ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ΅ ΠΠ΅Π»ΡΡΡΠ΅ Π² ΠΎΠ±Π»Π°ΡΡΠΈ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡ, ΠΊΠΎΠ³Π΄Π° ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π°ΠΌΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΈ Π΄ΡΡΠΎΠΊ Ρ Π°ΡΠΎΠΌΠΎΠ² ΠΏΡΠΈΠΌΠ΅ΡΠ΅ΠΉ ΠΈ/ΠΈΠ»ΠΈ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ² Π² cΠΈ v-Π·ΠΎΠ½Ρ ΠΌΠΎΠΆΠ½ΠΎ ΠΏΡΠ΅Π½Π΅Π±ΡΠ΅ΡΡ.Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΠΠ΅Π»ΡΡΡΠ΅ Ρ ΠΏΡΡΠΆΠΊΠΎΠ²ΠΎΠΉ ΠΌΠΈΠ³ΡΠ°ΡΠΈΠ΅ΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Ρ: 1) h-Π΄ΠΈΠΎΠ΄, ΡΠΎΠ΄Π΅ΡΠΆΠ°ΡΠΈΠΉ |d1)ΠΈ |d2)-ΠΎΠ±Π»Π°ΡΡΠΈ Ρ Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΠΌΠΈ Π΄ΠΎΠ½ΠΎΡΠ°ΠΌΠΈ Π΄Π²ΡΡ
ΡΠΎΡΡΠΎΠ² Π² Π·Π°ΡΡΠ΄ΠΎΠ²ΡΡ
ΡΠΎΡΡΠΎΡΠ½ΠΈΡΡ
(0) ΠΈ (+1) ΠΈ ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠΈΡΡΡΡΠΈΠ΅ ΠΈΡ
Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΠ΅ Π°ΠΊΡΠ΅ΠΏΡΠΎΡΡ Π² Π·Π°ΡΡΠ΄ΠΎΠ²ΠΎΠΌ ΡΠΎΡΡΠΎΡΠ½ΠΈΠΈ (β1); 2) ΠΎΠ΄Π½ΠΎΡΠΎΠ΄Π½ΡΠΉ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊ, ΡΠΎΠ΄Π΅ΡΠΆΠ°ΡΠΈΠΉ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΡΠ΅ t-Π΄Π΅ΡΠ΅ΠΊΡΡ Π² Π·Π°ΡΡΠ΄ΠΎΠ²ΡΡ
ΡΠΎΡΡΠΎΡΠ½ΠΈΡΡ
(β1, 0, +1), Π° ΡΠ°ΠΊΠΆΠ΅ ΠΈΠΎΠ½Ρ Π΄ΠΎΠ½ΠΎΡΠΎΠ² ΠΈ Π°ΠΊΡΠ΅ΠΏΡΠΎΡΠΎΠ² Π΄Π»Ρ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ΠΌ t-Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ² ΠΏΠΎ Π·Π°ΡΡΠ΄ΠΎΠ²ΡΡ
ΡΠΎΡΡΠΎΡΠ½ΠΈΡΠΌ. ΠΡΠΎΠ°Π½Π°Π»ΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Ρ Π·ΠΎΠ½Π½ΡΠ΅ Π΄ΠΈΠ°Π³ΡΠ°ΠΌΠΌΡ ΠΏΡΠ΅Π΄Π»Π°Π³Π°Π΅ΠΌΡΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΠΠ΅Π»ΡΡΡΠ΅ Π² ΡΠ°Π²Π½ΠΎΠ²Π΅ΡΠΈΠΈ Β ΠΈ ΠΏΡΠΈ Π²ΠΎΠ·Π±ΡΠΆΠ΄Π΅Π½ΠΈΠΈ ΡΡΠ°ΡΠΈΠΎΠ½Π°ΡΠ½ΠΎΠ³ΠΎ ΠΏΡΡΠΆΠΊΠΎΠ²ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠΎΠΊΠ°.Π Π°ΡΡΠΌΠΎΡΡΠ΅Π½Π° ΠΌΠΎΠ΄Π΅Π»Ρ h-Π΄ΠΈΠΎΠ΄Π°, ΡΠΎΠ΄Π΅ΡΠΆΠ°ΡΠ΅Π³ΠΎ Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΠ΅ Π΄ΠΎΠ½ΠΎΡΡ Π΄Π²ΡΡ
ΡΠΎΡΡΠΎΠ² |d1) ΠΈ |d2) Ρ ΠΏΡΡΠΆΠΊΠΎΠ²ΠΎΠΉ ΠΌΠΈΠ³ΡΠ°ΡΠΈΠ΅ΠΉ ΠΌΠ΅ΠΆΠ΄Ρ Π½ΠΈΠΌΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΏΡΠΈ ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠ°ΡΠΈΠΈ ΠΈΡ
Π½Π° 50 % Π°ΠΊΡΠ΅ΠΏΡΠΎΡΠ°ΠΌΠΈ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΡΠΈ ΠΎΠ±ΡΠ°ΡΠ½ΠΎΠΌ (ΠΏΡΡΠΌΠΎΠΌ) ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠΌ ΡΠΌΠ΅ΡΠ΅Π½ΠΈΠΈ Π΄ΠΈΠΎΠ΄Π° Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎ ΠΎΡ
Π»Π°ΠΆΠ΄Π΅Π½ΠΈΠ΅ (Π½Π°Π³ΡΠ΅Π²Π°Π½ΠΈΠ΅) ΠΎΠ±Π»Π°ΡΡΠΈ Π΄Π²ΠΎΠΉΠ½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠ»ΠΎΡ ΠΌΠ΅ΠΆΠ΄Ρ |d1)ΠΈ |d2)-ΠΎΠ±Π»Π°ΡΡΡΠΌΠΈ.Π Π°ΡΡΠΌΠΎΡΡΠ΅Π½ ΡΠ»Π΅ΠΌΠ΅Π½Ρ ΠΠ΅Π»ΡΡΡΠ΅ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠ° Ρ ΡΠΎΡΠ΅ΡΠ½ΡΠΌΠΈ t-Π΄Π΅ΡΠ΅ΠΊΡΠ°ΠΌΠΈ. ΠΡΠΈΠ½ΠΈΠΌΠ°Π»ΠΎΡΡ, ΡΡΠΎ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ°, Π° ΡΠ°ΠΊΠΆΠ΅ ΠΊΠΎΠ½ΡΠ΅Π½ΡΡΠ°ΡΠΈΠΈ ΠΈΠΎΠ½ΠΎΠ² Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΡ
Π°ΠΊΡΠ΅ΠΏΡΠΎΡΠΎΠ² ΠΈ Π΄ΠΎΠ½ΠΎΡΠΎΠ² ΡΠ°ΠΊΠΎΠ²Ρ, ΡΡΠΎ ΠΏΡΠ°ΠΊΡΠΈΡΠ΅ΡΠΊΠΈ Π²ΡΠ΅ t-Π΄Π΅ΡΠ΅ΠΊΡΡ Π½Π°Ρ
ΠΎΠ΄ΡΡΡΡ Π² Π·Π°ΡΡΠ΄ΠΎΠ²ΠΎΠΌ ΡΠΎΡΡΠΎΡΠ½ΠΈΠΈ (0). ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ Π² ΡΠ°ΠΊΠΎΠΌ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ΅ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎ ΠΎΡ
Π»Π°ΠΆΠ΄Π΅Π½ΠΈΠ΅ ΠΊΠΎΠ½ΡΠ°ΠΊΡΠ° ΠΌΠ΅ΡΠ°Π»Π»-ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊ, Π½Π°Ρ
ΠΎΠ΄ΡΡΠ΅Π³ΠΎΡΡ ΠΏΠΎΠ΄ ΠΎΡΡΠΈΡΠ°ΡΠ΅Π»ΡΠ½ΡΠΌ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΠΌ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»ΠΎΠΌ, ΠΈ Π½Π°Π³ΡΠ΅Π²Π°Π½ΠΈΠ΅ ΠΏΡΠΎΡΠΈΠ²ΠΎΠΏΠΎΠ»ΠΎΠΆΠ½ΠΎΠ³ΠΎ ΠΊΠΎΠ½ΡΠ°ΠΊΡΠ°, ΠΏΠΎΠ΄ ΠΏΠΎΠ»ΠΎΠΆΠΈΡΠ΅Π»ΡΠ½ΡΠΌ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»ΠΎΠΌ
On the Issue of Nitrogen Solubility in Chromium-Nickel Grades of Steels
The article presents a comparative analysis of the solubility of nitrogen in chromium-nickel grades of steels. It is revealed that the existing theoretical calculations on the solubility of nitrogen in chromium-nickel steels can be applied only to austenitic grades of steels
Preparation of porous TiNi-Ti alloy by diffusion sintering method and study of its composition, structure and martensitic transformations
The study demonstrates a method for controlling not only the phase composition but also the atomic composition of TiNi matrix in porous TiNi-Ti alloys developed for biomedical uses as implants. The alloys were obtained from TiNi powder which was sintered with Ti powder added at as much as 0β10 at%. The structure, phase and chemical composition of the produced TiNi-Ti alloys was investigated with respect to the amount of Ti added into the material. It is shown that in the sintered product containing 5 at% and more of Ti additive, the composition of its TiNi matrix becomes close to equiatomic (with Ti:Ni atomic ratio ~1), and the excessive Ti precipitates as secondary phases Ti2Ni and Ti3Ni4. In parallel, with increase in Ti ad- ditive from 0β10 at%, the structure of the precipitating Ti2Ni type phases changes its morphology from separate spherical or pyramidal precipitates to large dendritic formations. The direct martensitic trans- formation from austenite to martensite in all the samples was found to proceed in two stages and through the R-phase (B2βRβB19β²). Thermoresistive analysis demonstrated that TiNi-Ti samples with 5 and more at% of Ti had their characteristic starting temperature of martensite transition stabilizing at ~57 Β°C (330 K). This implies that the sample with 5 at% of Ti additive exhibited desired martensite transition temperatures, while containing a minimum concentration of secondary-phase precipitates in its matrix which deteriorate its properties. Thus, for the κ³rst time, we show that a very simple preparation approach based on sintering powders of TiNi and Ti is capable of producing porous TiNi-Ti alloys with properties optimized for fabricating bone implants
Experimental study of direct photon emission in K- --> pi- pi0 gamma decay using ISTRA+ detector
The branching ratio in the charged-pion kinetic energy region of 55 to 90 MeV
for the direct photon emission in the K- --> pi- pi0 gamma decay has been
measured using in-flight decays detected with the ISTRA+ setup operating in the
25 GeV/c negative secondary beam of the U-70 PS. The value
Br(DE)=[0.37+-0.39(stat)+-0.10(syst)]*10^(-5) obtained from the analysis of 930
completely reconstructed events is consistent with the average value of two
stopped-kaon experiments, but it differs by 2.5 standard deviations from the
average value of three in-flight-kaon experiments. The result is also compared
with recent theoretical predictions.Comment: 13 pages, 8 figure
ENGAGING NUMERICAL MODELING TO ANALYZE METALLURGICAL AND CASTING PROCESSES
This theses present the numerical modeling of direct current electroslag remelting process and hardening dispersed carbides injection in centrifugal casting process. The computer soft-ware for modeling this processes has been described
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