Evolution and impact of defects in a p-channel CCD after cryogenic proton-irradiation

P-channel CCDs have been shown to display improved tolerance to radiation-induced charge transfer inefficiency (CTI) when compared to n-channel CCDs. However, the defect distribution formed during irradiation is expected to be temperature dependent due to the differences in lattice energy caused by a temperature change. This has been tested through defect analysis of two p-channel e2v CCD204 devices, one irradiated at room temperature and one at a cryogenic temperature (153K). Analysis is performed using the method of single trap pumping. The dominant charge trapping defects at these conditions have been identified as the donor level of the silicon divacancy and the carbon interstitial defect. The defect parameters are analysed both immediately post irradiation and following several subsequent room-temperature anneal phases up until a cumulative anneal time of approximately 10 months. We have also simulated charge transfer in an irradiated CCD pixel using the defect distribution from both the room-temperature and cryogenic case, to study how the changes affect imaging performance. The results demonstrate the importance of cryogenic irradiation and annealing studies, with large variations seen in the defect distribution when compared to a device irradiated at room-temperature, which is the current standard procedure for radiation-tolerance testing

Modelling charge transfer in a radiation damaged charge coupled device for Euclid

As electrons are transferred through a radiation damaged Charge Coupled Device (CCD), they may encounter traps in the silicon in which they will be captured and subsequently released. This capture and release of electrons can lead to a 'smearing' of the image. The dynamics of the trapping process can be described through the use of Shockley-Read-Hall theory, in which exponential time constants are used to determine the probability of capture and release. If subjected to a hostile radiation environment, such as in space where the dominant charged particle is the proton, these incident protons can cause displacement damage within the CCD and lead to the formation of stable trap sites. As the trap density increases, the trapping and release of signal electrons can have a major impact on the Charge Transfer Efficiency (CTE) to the detriment of device performance. As the science goals for missions become ever more demanding, such as those for the ESA Euclid and Gaia missions, the problem of radiation damage must be overcome. In order to gain a deeper understanding of the trapping process and the impact on device performance, a Monte Carlo simulation has been developed to model the transfer of charge in a radiation damaged CCD. This study investigates the various difficulties encountered when developing such a model: the incorporation of appropriate clocking mechanisms, the use of suitable trap parameters and their degeneracy, and the development of methods to model the charge storage geometry within a pixel through the use of three-dimensional Silvaco simulations

Importance of charge capture in interphase regions during readout of charge-coupled devices

The current understanding of charge transfer dynamics in charge-coupled devices (CCDs) is that charge is moved so quickly from one phase to the next in a clocking sequence and with a density so low that trapping of charge in the interphase regions is negligible. However, simulation capabilities developed at the Centre for Electronic Imaging, which includes direct input of electron density simulations, have made it possible to investigate this assumption further. As part of the radiation testing campaign of the Euclid CCD273 devices, data have been obtained using the trap pumping method, a method that can be used to identify and characterize single defects within CCDs. Combining these data with simulations, we find that trapping during the transfer of charge among phases is indeed necessary to explain the results of the data analysis. This result could influence not only trap pumping theory and how trap pumping should be performed but also how a radiation-damaged CCD is readout in the most optimal way

Effects of peroxynitrite-induced protein modifications on tyrosine phosphorylation and degradation

AbstractThe ability of protein tyrosine kinases to phosphorylate a synthetic peptide was inhibited 51% by peroxynitritemediated nitration of tyrosine. Exposure of endothelial cells to peroxynitrite decreased the intensity of tyrosine phosphorylated proteins and increased the intensity of nitrotyrosine-containing proteins. Peroxynitrite-modified BSA was degraded by human red blood cell lysates. However, human plasma in a concentration-, time-, and temperature-dependent manner, removed the protein nitrotyrosine epitope. These results suggest that tyrosine nitration interferes with phosphorylation and targets proteins for degradation. Specific enzymatic process(es) for removing nitrotyrosine may be present in vivo

Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

The displacement damage hardness that can be achieved using p-channel charge-coupled devices (CCD) was originally demonstrated in 1997, and since then a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs. A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24×109 and 1.24×1011 protons cm-2. The dark current, cosmetic quality and the number of defects identified using trap pumping immediately were monitored after the irradiation for a period of 150 hours with the device held at 153 K and then after different periods of time at room temperature. The device also exhibited a flatband voltage shift of around 30 mV / krad, determined by the reduction in full well capacity

Determination of <i>in situ</i> trap properties in CCDs using a "single-trap pumping" technique

The science goals of space missions from the Hubble Space Telescope through to Gaia and Euclid require ultraprecise positional, photometric, and shape measurement information. However, in the radiation environment of the space telescopes, damage to the focal plane detectors through high-energy protons leads to the creation of traps, a loss of charge transfer efficiency, and a consequent deterioration in measurement accuracy. An understanding of the traps produced and their properties in the CCD during operation is essential to allow optimization of the devices and suitable modeling to correct the effect of the damage through the postprocessing of images. The technique of “pumping single traps” has allowed the study of individual traps in high detail that cannot be achieved with other techniques, such as deep level transient spectroscopy, whilst also locating each trap to the subpixel level in the device. Outlining the principles used, we have demonstrated the technique for the A-center, the most influential trap in serial readout, giving results consistent with the more general theoretical values, but here showing new results indicating the spread in the emission times achieved and the variation in capture probability of individual traps with increasing signal levels. This technique can now be applied to other time and temperature regimes in the CCD to characterize individual traps in situ under standard operating conditions such that dramatic improvements can be made to optimization processes and modeling techniques

The effect of protons on the performance of second generation Swept Charge Devices

The e2v technologies Swept Charge Device (SCD) was developed as a large area detector for X-ray Florescence (XRF) analysis, achieving near Fano-limited spectroscopy at -15 °C. The SCD was flown in the XRF instruments on board the European Space Agency's SMART-1 and the Indian Space Research Organisation's Chandrayaan-1 lunar missions. The second generation SCD, proposed for use in the soft X-ray spectrometer on the Chandrayaan-2 lunar orbiter and the soft X-ray imager on China's HXMT mission, was developed, in part, using the findings of the radiation damage studies performed for the Chandrayaan-1 X-ray Spectrometer. This paper discusses the factor of two improvement in radiation tolerance achieved in the second generation SCD, the different SCD sizes produced and their advantages for future XRF instruments, for example through reduced shielding mass or higher operating temperatures

Comparing simulations and test data of a radiation damaged charge-coupled device for the Euclid mission

The visible imager instrument on board the Euclid mission is a weak-lensing experiment that depends on very precise shape measurements of distant galaxies obtained by a large charge-coupled device (CCD) array. Due to the harsh radiative environment outside the Earth’s atmosphere, it is anticipated that the CCDs over the mission lifetime will be degraded to an extent that these measurements will be possible only through the correction of radiation damage effects. We have therefore created a Monte Carlo model that simulates the physical processes taking place when transferring signals through a radiation-damaged CCD. The software is based on Shockley–Read–Hall theory and is made to mimic the physical properties in the CCD as closely as possible. The code runs on a single electrode level and takes the three-dimensional trap position, potential structure of the pixel, and multilevel clocking into account. A key element of the model is that it also takes device specific simulations of electron density as a direct input, thereby avoiding making any analytical assumptions about the size and density of the charge cloud. This paper illustrates how test data and simulated data can be compared in order to further our understanding of the positions and properties of the individual radiation-induced traps

Comparison of proton irradiated P-channel and N-channel CCDs

Charge transfer inefficiency and dark current effects are compared for e2v technologies plc. p-channel and n-channel CCDs, both irradiated with protons. The p-channel devices, prior to their irradiation, exhibited twice the dark current and considerable worse charge transfer inefficiency (CTI) than a typical n-channel. The radiation induced increase in dark current was found to be comparable with n-channel CCDs, and its temperature dependence suggest the divacancy is the dominant source of thermally generated dark current pre and post irradiation. The factor of improvement in tolerance to radiation induced CTI varied by between 15 and 25 for serial CTI and 8 and 3 for parallel CTI, between −70 °C and −110 °C respectively

Assessment of the performance and radiation damage effects under cryogenic temperatures of a P-channel CCD204s

CCDs continue to be the detector of choice for high resolution and high performance space applications. One perceived drawback is their susceptibility to radiation damage, in particular the formation of trap sites leading to a decrease in charge transfer efficiency. To that end, ESA has started a programme to investigate a new generation of devices based upon p-channel technology. The expectation is that once mature, p-channel devices may offer a significant increase in tolerance to proton radiation over traditional n-type buried channel CCDs. Early studies of e2v devices to assess the radiation hardness of p-channel devices were limited by the quality of devices available, however more recently, good quality p-channel CCD204s have been manufactured and studied. A more detailed evaluation of p-channel CCDs is now underway to realise the full potential of the technology for use in future high radiation environment space missions. A key aspect is the development of a cryogenic test rig that will allow for the first time a direct comparison of the radiation damage effects when the irradiation is performed both traditionally unbiased at room temperature and cryogenically with the device operational. Subsequent characterisations will also be performed on the cryogenic device after periods of storage at room temperature to investigate the potential annealing effects upon the lattice damage. Here we describe and present early results from an extensive programme of testing which will address all key performance parameters for p-channel CCDs, such as full electro-optical characterisation, assessment of radiation hardness and investigation of trap species