About the interaction between a laser beam and group IV nanowires: a study of the electromagnetic field enhancement in homogeneous and heterostructured nanowires

The optical properties of semiconductor nanowires (NWs) are object of study because they are the building blocks of the future nanophotonic devices. The high refractive index and its reduced dimension, make them suitable for photon engineering. The study of the interaction between NWs and visible light has revealed resonances of the light absorption/scattering by the NWs. Micro-Raman spectroscopy is used as a characterization method of semiconductor NWs. The relation between the Raman intensity and the incident electromagnetic (EM) field permits to study the light/NW interaction through the micro-Raman spectra of individual NWs. As compared to either metallic or dielectric NWs, the semiconductor NWs add additional tools to modify its interaction with light, for example, the composition, the presence of heterostructures, both axial and radial, doping, and the surface morphology. One presents herein a study of the optical response of group IV semiconductor NWs to visible photons. The study is experimentally carried out through the micro-Raman spectroscopy of different group IV NWs, both homogeneous and heterostructured (SiGe/Si), and the results are analyzed in terms of the EM modeling of the light/NW interaction using finite element methods (FEMs). The heterostructures are seen to produce additional resonances allowing new photonic capacities to the semiconductor NWs.Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref VA293U13

Electromagnetic interaction between a laser beam and semiconductor nanowires deposited on different substrates: Raman enhancement in Si Nanowires

Producción CientíficaRaman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depends on the electromagnetic coupling of the system laser/NW/substrate. The antenna effect of the Raman signal was measured in individual NWs deposited on different substrates, and also free standing NWs in air. The one phonon Raman band in NWs can reach high intensities depending on the system configuration; values of Raman intensity per unit volume more than a few hundred times with respect to bulk substrate can be obtained.Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13

Propuesta documental del Plan Estratégico de Seguridad Vial para RMC Industriales de Colombia S.A.S

La propuesta documental del Plan Estratégico de Seguridad Vial (PESV) para la empresa RMC Industriales de Colombia S.A.S. la cual se dedica principalmente a ejecutar proyectos de reparación, mantenimiento y construcción en diferentes sectores industriales; se enfocó principalmente en el diagnóstico y caracterización de los riesgos viales presentes en las actividades inherentes a su objeto social, brindando herramientas documentales que permitan a la Alta Dirección tomar las decisiones que permitan en un mediano plazo la ejecución del mismo, garantizando la seguridad y salud de sus empleados y en pro de mejorar la calidad de los servicios brindados

Mechanisms driving the catastrophic optical damage in high power laser diodes

Producción CientíficaThe catastrophic optical damage (COD) of laser diodes consists of the sudden drop off of the optical power. COD is generally associated with a thermal runaway mechanism in which the active zone of the laser is molten in a positive feedback process. The full sequence of the degradation follows different phases: in the first phase, a weak zone of the laser is incubated and the temperature is locally increased there; when a critical temperature is reached the thermal runaway process takes place. Usually, the positive feedback leading to COD is circumscribed to the sequential enhancement of the optical absorption in a process driven by the increase of the temperature. However, the meaning of the critical temperature has not been unambiguously established. Herein, we will discuss about the critical temperature, and the physical mechanisms involved in this process. The influence of the progressive deterioration of the thermal conductivity of the laser structure as a result of the degradation during the laser operation will be addressed.Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13

Enhanced Signal Micro-Raman Study of SiGe Nanowires and SiGe/Si Nanowire Axial Heterojuntions Grown Using Au and Ga-Au Catalysts

Producción CientíficaMicroRaman spectroscopy was used for the characterization of heterostructured SiGe/Si nanowires. The NWs were grown with alloyed AuGa catalysts droplets with different Ga compositions aiming to make more abrupt heterojunctions. The heterojunctions were first characterized by TEM; then the NWs were scanned by the laser beam in order to probe the heterojunction. The capability of the MicroRaman spectroscopy for studying the heterojunction is discussed. The results show that the use of catalysts with lower Ge and Si solubility (AuGa alloys) permits to achieve more abrupt junctions.Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.Junta de Castilla y Le on (Projects VA293U13 and VA081U16) and Spanish Government (CICYT MAT2010-20441-C02 (01 and 02) and ENE 2014-56069-C4-4-R). J. L. Pura was granted by the FPU programme (Spanish Government) (FPU14/00916)

Local electric field enhancement at the heterojunction of Si/SiGe axially heterostructured nanowires under laser illumination

Producción CientíficaWe present a phenomenon concerning the electric eld enhancement at the heterojunction region of axially heterostructured Si/SiGe nanowires when the nanowire is illuminated by a focused laser beam. The electric eld is sensed by micro Raman spectroscopy, which permits to reveal the enhancement of the Raman signal arising from the heterojunction region; the Raman signal per unit volume increases at least 10 times with respect to the homogeneous Si, and SiGe nanowire segments. In order to explore the physical meaning of this phenomenon, a 3-dimensional solution of the Maxwell equations of the interaction between the focused laser beam and the nanowire was carried out by nite element methods. A local enhancement of the electric eld at the heterojunction was deduced; however, the magnitude of the electromagnetic eld enhancement only approaches the experimental one when the free carriers are considered, showing enhanced absorption at the carrier depleted heterojunction region. The existence of this e ect promises a way to improve the photon harvesting using axially heterostructured semiconductor NWs.Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13

Cardiovascular disease in latin american patients with systemic lupus erythematosus: a cross-sectional study and a systematic review

Objective. This study was performed to determine the prevalence of and associated risk factors for cardiovascular disease (CVD) in Latin American (LA) patients with systemic lupus erythematosus (SLE). Methods. First, a cross-sectional analytical study was conducted in 310 Colombian patients with SLE in whom CVD was assessed. Associated factors were examined by multivariate regression analyses. Second, a systematic review of the literature on CVD in SLE in LA was performed. Results. There were 133 (36.5%) Colombian SLE patients with CVD. Dyslipidemia, smoking, coffee consumption, and pleural effusion were positively associated with CVD. An independent effect of coffee consumption and cigarette on CVD was found regardless of gender and duration of disease. In the systematic review, 60 articles fulfilling the eligibility criteria were included. A wide range of CVD prevalence was found (4%–79.5%). Several studies reported ancestry, genetic factors, and polyautoimmunity as novel risk factors for such a condition.Conclusions. A high rate of CVD is observed in LA patients with SLE. Awareness of the observed risk factors should encourage preventive population strategies for CVD in patients with SLE aimed at facilitating the suppression of cigarette smoking and coffee consumption as well as at the tight control of dyslipidemia and other modifiable risk factors

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.Junta de Castilla y Le on (Projects VA293U13 and VA081U16) and Spanish Government (CICYT MAT2010-20441-C02 (01 and 02) and ENE 2014-56069-C4-4-R). J. L. Pura was granted by the FPU programme (Spanish Government) (FPU14/00916)

Cytokine and autoantibody clusters interaction in systemic lupus erythematosus

Background: Evidence supports the existence of different subphenotypes in systemic lupus erythematosus (SLE) and the pivotal role of cytokines and autoantibodies, which interact in a highly complex network. Thus, understanding how these complex nonlinear processes are connected and observed in real-life settings is a major challenge. Cluster approaches may assist in the identification of these subphenotypes, which represent such a phenomenon, and may contribute to the development of personalized medicine. Therefore, the relationship between autoantibody and cytokine clusters in SLE was analyzed. Methods: This was an exploratory study in which 67 consecutive women with established SLE were assessed. Clinical characteristics including disease activity, a 14-autoantibody profile, and a panel of 15 serum cytokines were measured simultaneously. Mixed-cluster methodology and bivariate analyses were used to define autoantibody and cytokine clusters and to identify associations between them and related variables. Results: First, three clusters of autoantibodies were defined: (1) neutral, (2) antiphospholipid antibodies (APLA)-dominant, and (3) anti-dsDNA/ENA-dominant. Second, eight cytokines showed levels above the threshold thus making possible to find 4 clusters: (1) neutral, (2) chemotactic, (3) G-CSF dominant, and (4) IFN?/Pro-inflammatory. Furthermore, the disease activity was associated with cytokine clusters, which, in turn, were associated with autoantibody clusters. Finally, when all biomarkers were included, three clusters were found: (1) neutral, (2) chemotactic/APLA, and (3) IFN/dsDNA, which were also associated with disease activity. Conclusion: These results support the existence of three SLE cytokine-autoantibody driven subphenotypes. They encourage the practice of personalized medicine, and support proof-of-concept studies. © 2017 The Author(s)