Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements

We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2 $\sim$ 31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be $3.0 \sim 9.1 \times 10^{10}$ cm$^{-2}$ for our samples. An asymmetry in the electron/hole scattering is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder potential, in good agreement with quantum-mechanical numerical calculations.Comment: 6 pages, 3 figure

Talc-dominated seafloor deposits reveal a new class of hydrothermal system

The Von Damm Vent Field (VDVF) is located on the flanks of the Mid-Cayman Spreading Centre, 13?km west of the axial rift, within a gabbro and peridotite basement. Unlike any other active vent field, hydrothermal precipitates at the VDVF comprise 85–90% by volume of the magnesium silicate mineral, talc. Hydrothermal fluids vent from a 3-m high, 1-m diameter chimney and other orifices at up to 215?°C with low metal concentrations, intermediate pH (5.8) and high concentrations (667?mmol?kg?1) of chloride relative to seawater. Here we show that the VDVF vent fluid is generated by interaction of seawater with a mafic and ultramafic basement which precipitates talc on mixing with seawater. The heat flux at the VDVF is measured at 487±101?MW, comparable to the most powerful magma-driven hydrothermal systems known, and may represent a significant mode of off-axis oceanic crustal cooling not previously recognized or accounted for in global models

Determination of the QCD color factor ratio CA/CF from the scale dependence of multiplicity in three jet events

I examine the determination of the QCD color factor ratio CA/CF from the scale evolution of particle multiplicity in e+e- three jet events. I fit an analytic expression for the multiplicity in three jet events to event samples generated with QCD multihadronic event generators. I demonstrate that a one parameter fit of CA/CF yields the expected result CA/CF=2.25 in the limit of asymptotically large energies if energy conservation is included in the calculation. In contrast, a two parameter fit of CA/CF and a constant offset to the gluon jet multiplicity, proposed in a recent study, does not yield CA/CF=2.25 in this limit. I apply the one parameter fit method to recently published data of the DELPHI experiment at LEP and determine the effective value of CA/CF from this technique, at the finite energy of the Z0 boson, to be 1.74+-0.03+-0.10, where the first uncertainty is statistical and the second is systematic.Comment: 20 pages including 6 figures Version 2 corrects typographical error in equation (2

Graphene-passivated nickel as an efficient hole-injecting electrode for large area organic semiconductor devices

Efficient injection of charge from metal electrodes into semiconductors is of paramount importance to obtain high performance optoelectronic devices. The quality of the interface between the electrode and the semiconductor must, therefore, be carefully controlled. The case of organic semiconductors presents specific problems: ambient deposition techniques, such as solution processing, restrict the choice of electrodes to those not prone to oxidation, limiting potential applications. Additionally, damage to the semiconductor in sputter coating or high temperature thermal evaporation poses an obstacle to the use of many device-relevant metals as top electrodes in vertical metal–semiconductor–metal structures, making it preferable to use them as bottom electrodes. Here, we propose a possible solution to these problems by implementing graphene-passivated nickel as an air stable bottom electrode in vertical devices comprising organic semiconductors. We use these passivated layers as hole-injecting bottom electrodes, and we show that efficient charge injection can be achieved into standard organic semiconducting polymers, owing to an oxide free nickel/graphene/polymer interface. Crucially, we fabricate our electrodes with low roughness, which, in turn, allows us to produce large area devices (of the order of millimeter squares) without electrical shorts occurring. Our results make these graphene-passivated ferromagnetic electrodes a promising approach for large area organic optoelectronic and spintronic devices.We acknowledge funding from EPSRC (EP/P005152/1, EP/M005143/1). R.M. and K.N. acknowledges funding from the EPSRC Cambridge NanoDTC (Grant No. EP/G037221/1). J.A.-W. acknowledges the support of his Research Fellowship from the Royal Commission for the Exhibition of 1851, and Royal Society Dorothy Hodgkin Research Fellowship. R. S. W. acknowledges support from a CAMS-UK fellowship

Recurrence Plot Based Measures of Complexity and its Application to Heart Rate Variability Data

The knowledge of transitions between regular, laminar or chaotic behavior is essential to understand the underlying mechanisms behind complex systems. While several linear approaches are often insufficient to describe such processes, there are several nonlinear methods which however require rather long time observations. To overcome these difficulties, we propose measures of complexity based on vertical structures in recurrence plots and apply them to the logistic map as well as to heart rate variability data. For the logistic map these measures enable us not only to detect transitions between chaotic and periodic states, but also to identify laminar states, i.e. chaos-chaos transitions. The traditional recurrence quantification analysis fails to detect the latter transitions. Applying our new measures to the heart rate variability data, we are able to detect and quantify the laminar phases before a life-threatening cardiac arrhythmia occurs thereby facilitating a prediction of such an event. Our findings could be of importance for the therapy of malignant cardiac arrhythmias

Multi-band magnetotransport in exfoliated thin films of Cu<i>_x</i>Bi₂Se₃

We report magnetotransport studies in thin (100nm indicating the presence of topologically protected surface states

Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

We demonstrate a simple, scalable approach to achieve encapsulated graphene transistors with negligible gate hysteresis, low doping levels and enhanced mobility compared to as-fabricated devices. We engineer the interface between graphene and atomic layer deposited (ALD) Al$_{2}$O$_{3}$ by tailoring the growth parameters to achieve effective device encapsulation whilst enabling the passivation of charge traps in the underlying gate dielectric. We relate the passivation of charge trap states in the vicinity of the graphene to conformal growth of ALD oxide governed by $\textit{in situ}$ gaseous H$_{2}$O pretreatments. We demonstrate the long term stability of such encapsulation techniques and the resulting insensitivity towards additional lithography steps to enable vertical device integration of graphene for multi-stacked electronics fabrication.This work was supported by the EPSRC (Grant Nos. EP/K016636/1, GRAPHTED and EP/L020963/1) and the ERC (Grant No. 279342, InsituNANO). JAA-W acknowledges a Research Fellowship from Churchill College, Cambridge. JS acknowledges support from NUDT. ZAVV acknowledges funding from ESPRC grant EP/L016087/1. ACV acknowledges the Conacyt Cambridge Scholarship and the Roberto Rocca Fellowship. RW acknowledges EPSRC Doctoral Training Award (EP/M506485/1)