423 research outputs found
Magnetic Gaps related to Spin Glass Order in Fermionic Systems
We provide evidence for spin glass related magnetic gaps in the fermionic
density of states below the freezing temperature. Model calculations are
presented and proposed to be relevant for explaining resistivity measurements
which observe a crossover from variable-range- to activated behavior. The
magnetic field dependence of a hardgap and the low temperature decay of the
density of states are given. In models with fermion transport a new
metal-insulator transition is predicted to occur due to the spin-glass gap,
anteceding the spin glass to quantum paramagnet transition at smaller spin
density. Important fluctuation effects due to finite range frustrated
interactions are estimated and discussed.Comment: 4 pages, 1 Postscript figure, revised version accepted for
publication in Physical Review Letter
One-dimensional transport in polymer nanofibers
We report our transport studies in quasi one-dimensional (1D) conductors -
helical polyacetylene fibers doped with iodine and the data analysis for other
polymer single fibers and tubes. We found that at 30 K < T < 300 K the
conductance and the current-voltage characteristics follow the power law: G(T)
~ T^alpha with alpha ~ 2.2-7.2 and I(V) ~ V^betta with betta ~ 2-5.7. Both G(T)
and I(V) show the features characteristic of 1D systems such as Luttinger
liquid or Wigner crystal. The relationship between our results and theories for
tunneling in 1D systems is discussed.Comment: 11 pages, 3 figures, accepted for publication in Phys. Rev. Letter
Effect of electric field on the photoluminescence of polymer-inorganic nanoparticles composites
We report on the effect of electric field on the photoluminescence, PL, from
a composite consisting of a conjugated polymer mixed with zinc oxide
nanoparticles. We have found that in the absence of electric field PL emission
from the composite film has two maxima in the blue and green-yellow regions.
Application of a voltage bias to planar gold electrodes suppresses the
green-yellow emission and shifts the only PL emission maximum towards the blue
region. Current-voltage characteristics of the polymer-nanoparticles composite
exhibit the non-linear behavior typical of non-homogeneous polymer-inorganic
structures. Generation of excited states in the composite structure implies the
presence of several radiative recombination mechanisms including formation of
polymer-nanoparticle complexes including exciplex states and charge transfer
between the polymer and nanoparticle that can be controlled by an electric
field.Comment: 5 pages, 5 figures. accepted for publication in Solid State
Communication
Thermodynamic aspects of materials' hardness: prediction of novel superhard high-pressure phases
In the present work we have proposed the method that allows one to easily
estimate hardness and bulk modulus of known or hypothetical solid phases from
the data on Gibbs energy of atomization of the elements and corresponding
covalent radii. It has been shown that hardness and bulk moduli of compounds
strongly correlate with their thermodynamic and structural properties. The
proposed method may be used for a large number of compounds with various types
of chemical bonding and structures; moreover, the temperature dependence of
hardness may be calculated, that has been performed for diamond and cubic boron
nitride. The correctness of this approach has been shown for the recently
synthesized superhard diamond-like BC5. It has been predicted that the
hypothetical forms of B2O3, diamond-like boron, BCx and COx, which could be
synthesized at high pressures and temperatures, should have extreme hardness
ΠΠΊΡΠΈΠ²Π°ΡΠΈΠΎΠ½Π½ΡΠ΅ ΠΏΡΠΎΡΠ΅ΡΡΡ ΠΏΡΠΈ ΡΠ°Π±ΠΎΡΠ΅ ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠ° Ag/SnSe/Ge2Se3/W Ρ ΡΠ°ΠΌΠΎΡΠΎΡΠΌΠΈΡΡΡΡΠΈΠΌΡΡ ΡΠΎΠΊΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠΈΠΌ ΠΊΠ°Π½Π°Π»ΠΎΠΌ
In an Ag/SnSe/Ge2Se3/W ionic type memristor, the activation energy of two main processes responsible for its operation has been determined, namely: the activation energy for the formation of a conductive channel and the activation energy for memristor degradation. By measuring the current-voltage characteristics, the electrical conductivity of the memristor in low- and high-resistance operating modes was assessed. To determine the activation energy, the Arrhenius law and the provisions of the thermodynamics of irreversible processes were used, in particular the second postulate of Onsager, according to which the growth rate of the irreversible part of the entropy of a system tending to equilibrium is proportional to the sum of the products of the flows occurring in the system and the generalized thermodynamic force corresponding to each flow. The equilibrium state of the memristor was taken to be the state in which the memristor lost the ability to function as a resistive memory cell. The flow of Ag+ ions β electromigration was used as a substance flow. For the first process, the activation energy was 0.24 eV, and for the second, 1.16 eV. The different values of activation energy reflect the difference between the agglomeration mechanism of formation of a current-conducting channel, typical of an Ag/SnSe/Ge2Se3/W memristor, and the βstandardβ mechanism of substance transfer based on a group of point defects, which accompanies the process of memristor degradation.Π ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠ΅ ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΡΠΈΠΏΠ° Ag/SnSe/Ge2Se3/W ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½Π° ΡΠ½Π΅ΡΠ³ΠΈΡ Π°ΠΊΡΠΈΠ²Π°ΡΠΈΠΈ Π΄Π²ΡΡ
ΠΎΡΠ½ΠΎΠ²Π½ΡΡ
ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ², ΠΎΡΠ²Π΅ΡΡΡΠ²Π΅Π½Π½ΡΡ
Π·Π° Π΅Π³ΠΎ ΡΠ°Π±ΠΎΡΡ, Π° ΠΈΠΌΠ΅Π½Π½ΠΎ: ΡΠ½Π΅ΡΠ³ΠΈΡ Π°ΠΊΡΠΈΠ²Π°ΡΠΈΠΈ ΠΎΠ±ΡΠ°Π·ΠΎΠ²Π°Π½ΠΈΡ ΡΠΎΠΊΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠ΅Π³ΠΎ ΠΊΠ°Π½Π°Π»Π° ΠΈ ΡΠ½Π΅ΡΠ³ΠΈΡ Π°ΠΊΡΠΈΠ²Π°ΡΠΈΠΈ Π΄Π΅Π³ΡΠ°Π΄Π°ΡΠΈΠΈ ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠ°. Π‘ ΠΏΠΎΠΌΠΎΡΡΡ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ Π²ΠΎΠ»ΡΡ-Π°ΠΌΠΏΠ΅ΡΠ½ΡΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΠΎΡΠ΅Π½Π΅Π½Π° ΡΠ»Π΅ΠΊΡΡΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΎΡΡΡ ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠ° Π² Π½ΠΈΠ·ΠΊΠΎ- ΠΈ Π²ΡΡΠΎΠΊΠΎΠΎΠΌΠ½ΠΎΠΌ ΡΠ΅ΠΆΠΈΠΌΠ°Ρ
ΡΠ°Π±ΠΎΡΡ. ΠΠ»Ρ ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΡΠ½Π΅ΡΠ³ΠΈΠΈ Π°ΠΊΡΠΈΠ²Π°ΡΠΈΠΈ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½Ρ Π·Π°ΠΊΠΎΠ½ ΠΡΡΠ΅Π½ΠΈΡΡΠ° ΠΈ ΠΏΠΎΠ»ΠΎΠΆΠ΅Π½ΠΈΡ ΡΠ΅ΡΠΌΠΎΠ΄ΠΈΠ½Π°ΠΌΠΈΠΊΠΈ Π½Π΅ΠΎΠ±ΡΠ°ΡΠΈΠΌΡΡ
ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ², Π² ΡΠ°ΡΡΠ½ΠΎΡΡΠΈ Π²ΡΠΎΡΠΎΠΉ ΠΏΠΎΡΡΡΠ»Π°Ρ ΠΠ½Π·Π°Π³Π΅ΡΠ°, ΡΠΎΠ³Π»Π°ΡΠ½ΠΎ ΠΊΠΎΡΠΎΡΠΎΠΌΡ ΡΠΊΠΎΡΠΎΡΡΡ ΡΠΎΡΡΠ° Π½Π΅ΠΎΠ±ΡΠ°ΡΠΈΠΌΠΎΠΉ ΡΠ°ΡΡΠΈ ΡΠ½ΡΡΠΎΠΏΠΈΠΈ ΡΡΡΠ΅ΠΌΡΡΠ΅ΠΉΡΡ ΠΊ ΡΠ°Π²Π½ΠΎΠ²Π΅ΡΠΈΡ ΡΠΈΡΡΠ΅ΠΌΡ ΠΏΡΠΎΠΏΠΎΡΡΠΈΠΎΠ½Π°Π»ΡΠ½Π° ΡΡΠΌΠΌΠ΅ ΠΏΡΠΎΠΈΠ·Π²Π΅Π΄Π΅Π½ΠΈΠΉ ΠΏΡΠΎΡΠ΅ΠΊΠ°ΡΡΠΈΡ
Π² ΡΠΈΡΡΠ΅ΠΌΠ΅ ΠΏΠΎΡΠΎΠΊΠΎΠ² Π½Π° ΡΠΎΠΎΡΠ²Π΅ΡΡΡΠ²ΡΡΡΡΡ ΠΊΠ°ΠΆΠ΄ΠΎΠΌΡ ΠΏΠΎΡΠΎΠΊΡ ΠΎΠ±ΠΎΠ±ΡΠ΅Π½Π½ΡΡ ΡΠ΅ΡΠΌΠΎΠ΄ΠΈΠ½Π°ΠΌΠΈΡΠ΅ΡΠΊΡΡ ΡΠΈΠ»Ρ. ΠΠ° ΡΠ°Π²Π½ΠΎΠ²Π΅ΡΠ½ΠΎΠ΅ ΡΠΎΡΡΠΎΡΠ½ΠΈΠ΅ ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠ° ΠΏΡΠΈΠ½ΠΈΠΌΠ°Π»ΠΈ ΡΠΎΡΡΠΎΡΠ½ΠΈΠ΅, Π² ΠΊΠΎΡΠΎΡΠΎΠΌ ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡ ΡΠ΅ΡΡΠ» ΡΠΏΠΎΡΠΎΠ±Π½ΠΎΡΡΡ ΡΡΠ½ΠΊΡΠΈΠΎΠ½ΠΈΡΠΎΠ²Π°ΡΡ ΠΊΠ°ΠΊ ΡΡΠ΅ΠΉΠΊΠ° ΡΠ΅Π·ΠΈΡΡΠΈΠ²Π½ΠΎΠΉ ΠΏΠ°ΠΌΡΡΠΈ. Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΠΏΠΎΡΠΎΠΊΠ° Π²Π΅ΡΠ΅ΡΡΠ²Π° ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π»ΠΈ ΠΏΠΎΡΠΎΠΊ ΠΈΠΎΠ½ΠΎΠ² Ag+ β ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠΈΠ³ΡΠ°ΡΠΈΡ. ΠΠ»Ρ ΠΏΠ΅ΡΠ²ΠΎΠ³ΠΎ ΠΏΡΠΎΡΠ΅ΡΡΠ° ΡΠ½Π΅ΡΠ³ΠΈΡ Π°ΠΊΡΠΈΠ²Π°ΡΠΈΠΈ ΡΠΎΡΡΠ°Π²Π»ΡΠ»Π° 0,24 ΡΠ, Π° Π΄Π»Ρ Π²ΡΠΎΡΠΎΠ³ΠΎ β 1,16 ΡΠ. Π Π°Π·Π½ΡΠ΅ Π·Π½Π°ΡΠ΅Π½ΠΈΡ ΡΠ½Π΅ΡΠ³ΠΈΠΈ Π°ΠΊΡΠΈΠ²Π°ΡΠΈΠΈ ΠΎΡΡΠ°ΠΆΠ°ΡΡ ΡΠ°Π·Π»ΠΈΡΠΈΠ΅ ΠΌΠ΅ΠΆΠ΄Ρ Π°Π³Π»ΠΎΠΌΠ΅ΡΠ°ΡΠΈΠΎΠ½Π½ΡΠΌ ΠΌΠ΅Ρ
Π°Π½ΠΈΠ·ΠΌΠΎΠΌ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠΎΠΊΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠ΅Π³ΠΎ ΠΊΠ°Π½Π°Π»Π°, ΡΠΈΠΏΠΈΡΠ½ΡΠΌ Π΄Π»Ρ ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠ°Β Ag/SnSe/Ge2Se3/W, ΠΈ Β«ΡΡΠ°Π½Π΄Π°ΡΡΠ½ΡΠΌΒ» ΠΌΠ΅Ρ
Π°Π½ΠΈΠ·ΠΌΠΎΠΌ ΠΏΠ΅ΡΠ΅Π½ΠΎΡΠ° Π²Π΅ΡΠ΅ΡΡΠ²Π° Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ Π³ΡΡΠΏΠΏΡ ΡΠΎΡΠ΅ΡΠ½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ², ΡΠΎΠΏΡΠΎΠ²ΠΎΠΆΠ΄Π°ΡΡΠΈΠΌ ΠΏΡΠΎΡΠ΅ΡΡ Π΄Π΅Π³ΡΠ°Π΄Π°ΡΠΈΠΈ ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠ°
ΠΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ Π²ΠΎΠ»ΡΡ-Π°ΠΌΠΏΠ΅ΡΠ½ΠΎΠΉ Ρ Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠ° TiN/HfO2/Pt ΠΏΡΠΈ ΡΠ°Π·Π»ΠΈΡΠ½ΠΎΠΉ ΡΠΎΠ»ΡΠΈΠ½Π΅ ΡΠΎΠΊΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠ΅Π³ΠΎ ΠΊΠ°Π½Π°Π»Π°
The operation of the TiN/HfO2/Pt bipolar memristor has been simulated by the finite elements method using the Maxwell steady state equations as a mathematical basis. The simulation provided knowledge of the effect of conductive filament thickness on the shape of the I-V curve. The conductive filament has been considered as the highly conductive Hf ion enriched HfOx phase (x < 2) whose structure is similar to a Magneli phase. In this work a mechanism has been developed describing the formation, growth and dissolution of the HfOx phase in bipolar mode of memristor operation which provides for oxygen vacancy flux control. The conductive filament has a cylindrical shape with the radius varying within 5β10 nm. An increase in the thickness of the conductive filament leads to an increase in the area of the hysteresis loop of the I-V curve due to an increase in the energy output during memristor operation. A model has been developed which allows quantitative calculations and hence can be used for the design of bipolar memristors and assessment of memristor heat loss during operation.ΠΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΊΠΎΠ½Π΅ΡΠ½ΡΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΠΈ Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ Π² ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΠΌΠ°ΡΠ΅ΠΌΠ°ΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ Π±Π°Π·ΠΈΡΠ° ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΉ ΠΠ°ΠΊΡΠ²Π΅Π»Π»Π° Π² ΡΡΠ°ΡΠΈΠΎΠ½Π°ΡΠ½ΠΎΠΌ ΡΠΎΡΡΠΎΡΠ½ΠΈΠΈ ΠΏΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ°Π±ΠΎΡΡ Π±ΠΈΠΏΠΎΠ»ΡΡΠ½ΠΎΠ³ΠΎ ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠ° TiN/HfO2/Pt, ΡΡΠΎ ΠΏΠΎΠ·Π²ΠΎΠ»ΠΈΠ»ΠΎ ΠΈΠ·ΡΡΠΈΡΡ Π²Π»ΠΈΡΠ½ΠΈΠ΅ ΡΠΎΠ»ΡΠΈΠ½Ρ ΡΠΎΠΊΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠ΅Π³ΠΎ ΠΊΠ°Π½Π°Π»Π° Π½Π° ΡΠΎΡΠΌΡ Π²ΠΎΠ»ΡΡ-Π°ΠΌΠΏΠ΅ΡΠ½ΠΎΠΉ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ. ΠΠ° ΡΠΎΠΊΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠΈΠΉ ΠΊΠ°Π½Π°Π» ΠΏΡΠΈΠ½ΠΈΠΌΠ°Π»Π°ΡΡ ΠΎΠ±ΠΎΠ³Π°ΡΠ΅Π½Π½Π°Ρ ΠΈΠΎΠ½Π°ΠΌΠΈ Hf ΡΠ°Π·Π° HfOx (x < 2), ΠΈΠΌΠ΅ΡΡΠ°Ρ ΡΡΡΡΠΊΡΡΡΡ ΡΠ°Π·Ρ ΠΠ°Π³Π½Π΅Π»ΠΈ, ΠΈ, ΡΠΎΠΎΡΠ²Π΅ΡΡΡΠ²Π΅Π½Π½ΠΎ, ΠΎΠ±Π»Π°Π΄Π°ΡΡΠ°Ρ ΠΏΠΎΠ²ΡΡΠ΅Π½Π½ΠΎΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΎΡΡΡΡ. Π Π°Π·ΡΠ°Π±ΠΎΡΠ°Π½ ΠΌΠ΅Ρ
Π°Π½ΠΈΠ·ΠΌ ΠΎΠ±ΡΠ°Π·ΠΎΠ²Π°Π½ΠΈΡ, ΡΠΎΡΡΠ° ΠΈ ΡΠ°ΡΡΠ²ΠΎΡΠ΅Π½ΠΈΡ ΡΠ°Π·Ρ HfOx Π² ΡΡΠ»ΠΎΠ²ΠΈΡΡ
Π±ΠΈΠΏΠΎΠ»ΡΡΠ½ΠΎΠ³ΠΎ ΡΠ΅ΠΆΠΈΠΌΠ° ΡΠ°Π±ΠΎΡΡ ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠ°, ΠΊΠΎΡΠΎΡΡΠΉ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΡΠΏΡΠ°Π²Π»ΡΡΡ ΠΏΠΎΡΠΎΠΊΠ°ΠΌΠΈ ΠΊΠΈΡΠ»ΠΎΡΠΎΠ΄Π½ΡΡ
Π²Π°ΠΊΠ°Π½ΡΠΈΠΉ. Π’ΠΎΠΊΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠΈΠΉ ΠΊΠ°Π½Π°Π» ΠΈΠΌΠ΅Π» ΡΠΎΡΠΌΡ ΡΠΈΠ»ΠΈΠ½Π΄ΡΠ° Ρ ΡΠ°Π΄ΠΈΡΡΠΎΠΌ, Π²Π°ΡΡΠΈΡΡΠ΅ΠΌΡΠΌ Π² ΠΏΡΠ΅Π΄Π΅Π»Π°Ρ
5β10 Π½ΠΌ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ Ρ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΠ΅ΠΌ ΡΠΎΠ»ΡΠΈΠ½Ρ ΠΊΠ°Π½Π°Π»Π° ΡΠ²Π΅Π»ΠΈΡΠΈΠ²Π°Π΅ΡΡΡ ΠΈ ΠΏΠ»ΠΎΡΠ°Π΄Ρ Π³ΠΈΡΡΠ΅ΡΠ΅Π·ΠΈΡΠ½ΡΡ
ΠΏΠ΅ΡΠ΅Π»Ρ Π²ΠΎΠ»ΡΡ-Π°ΠΌΠΏΠ΅ΡΠ½ΠΎΠΉ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ, ΡΡΠΎ ΡΠ²ΡΠ·Π°Π½ΠΎ Ρ Π²ΠΎΠ·ΡΠ°ΡΡΠ°ΡΡΠ΅ΠΉ ΡΠ½Π΅ΡΠ³Π΅ΡΠΈΡΠ΅ΡΠΊΠΎΠΉ Π½Π°Π³ΡΡΠ·ΠΊΠΎΠΉ ΠΏΡΠΈ ΡΠ°Π±ΠΎΡΠ΅ ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠ°. Π Π°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π° ΠΌΠΎΠ΄Π΅Π»Ρ, ΠΊΠΎΡΠΎΡΠ°Ρ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΠΏΡΠΎΠ²ΠΎΠ΄ΠΈΡΡ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²Π΅Π½Π½ΡΠ΅ ΡΠ°ΡΡΠ΅ΡΡ ΠΈ, ΡΠ»Π΅Π΄ΠΎΠ²Π°ΡΠ΅Π»ΡΠ½ΠΎ, Β ΠΌΠΎΠΆΠ΅Ρ Π±ΡΡΡ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½Π° ΠΏΡΠΈ ΠΊΠΎΠ½ΡΡΡΡΠΈΡΠΎΠ²Π°Π½ΠΈΠΈ Π±ΠΈΠΏΠΎΠ»ΡΡΠ½ΡΡ
ΠΌΠ΅ΠΌΡΠΈΡΡΠΎΡΠΎΠ² Π΄Π»Ρ ΠΎΡΠ΅Π½ΠΊΠΈ ΡΠ΅ΠΏΠ»ΠΎΠ²ΡΡ
ΠΏΠΎΡΠ΅ΡΡ Π²ΠΎ Π²ΡΠ΅ΠΌΡ ΠΈΡ
ΡΠ°Π±ΠΎΡΡ.
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