Half-metallic diluted antiferromagnetic semiconductors

The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, Cr)--are discussed

Coordination Dependence of Hyperfine Fields of 5sp Impurities on Ni Surfaces

We present first-principles calculations of the magnetic hyperfine fields H of 5sp impurities on the (001), (111), and (110) surfaces of Ni. We examine the dependence of H on the coordination number by placing the impurity in the surfaces, on top of them at the adatom positions, and in the bulk. We find a strong coordination dependence of H, different and characteristic for each impurity. The behavior is explained in terms of the on-site s-p hybridization as the symmetry is reduced at the surface. Our results are in agreement with recent experimental findings.Comment: 4 pages, 3 figure

Genetic studies on the behavioral traits of Drosophila Melanogaster

Thesis--University of Tsukuba, D.Sc.(A), no. 84, 1981. 3. 2

An Outcome Measure for Japanese People with Knee Osteoarthritis MASAMI AKAI, TOKUHIDE DOI, KEIJI FUJINO, TSUTOMU IWAYA, HISASHI KUROSAWA, and TERUO NASU

ABSTRACT. Objective. We describe a new outcome measure for Japanese patients with knee osteoarthritis, the Japanese Knee Osteoarthritis Measure (JKO

Optimizing Tc in the (Mn,Cr,Ga)As and (Mn,Ga)(As,P) Ternary Alloys

We explore two possible ways to enhance the critical temperature $T_c$ in the dilute magnetic semiconductor Mn$_{0.08}$Ga$_{0.92}$As. Within the context of the double-exchange and RKKY pictures, the ternary alloys Mn$_{x}$Cr$_{0.08-x}$Ga$_{0.92}$As and Mn$_{0.08}$Ga$_{0.92}$As$_y$P$_{1-y}$ might be expected to have $T_c$ higher than the pseudobinary Mn$_{0.08}$Ga$_{0.92}$As. To test whether the expectations from model pictures are confirmed, we employ linear response theory within the local-density approximation to search for theoretically higher critical temperatures in these ternary alloys. Our results show that neither co-doping Mn with Cr, nor alloying As with P improves $T_c$. Alloying with Cr is found to be deleterious to the $T_c$. Mn$_{0.08}$Ga$_{0.92}$As$_y$P$_{1-y}$ shows almost linear dependence of $T_c$ on $y$.Comment: 10 pages, 5 figure

Optical Conductivity of Ferromagnetic Semiconductors

The dynamical mean field method is used to calculate the frequency and temperature dependent conductivity of dilute magnetic semiconductors. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic mechanism

The local magnetic moments and hyperfine magnetic fields in disordered metal-metalloid alloys

The local magnetic moments and hyperfine magnetic fields (HFF) in the ordered alloys Fe_{15}Sn and Fe_{15}Si are calculated with the first-principles full-potential linear augmented plane wave (FP LAPW) method. The results are compared with the experimental data on Fe-M (M=Si, Sn) disordered alloys at small metalloid concentration. The relaxation of the lattice around the impurity and its influence on the quantities under consideration are studied. The mechanism of the local magnetic moment formation is described. It is proved that the main distinction between these alloys is connected with the different lattice parameters. Three contributions to the HFF are discussed: the contributions of the core and valence electron polarization to the Fermi-contact part, and the contibution from the orbital magnetic moment.Comment: 3 pages, 3 figures, submitted to Phys. Rev.

Mechanism of carrier-induced ferromagnetism in magnetic semiconductors

Taking into account both random impurity distribution and thermal fluctuations of localized spins, we have performed a model calculation for the carrier (hole) state in Ga$_{1-x}$Mn$_x$As by using the coherent potential approximation (CPA). The result reveals that a {\it p}-hole in the band tail of Ga$_{1-x}$Mn$_x$As is not like a free carrier but is rather virtually bounded to impurity sites. The carrier spin strongly couples to the localized {\it d} spins on Mn ions. The hopping of the carrier among Mn sites causes the ferromagnetic ordering of the localized spins through the double-exchange mechanism. The Curie temperature obtained by using conventional parameters agrees well with the experimental result.Comment: 7 pages, 4 figure

Disorder effects in diluted ferromagnetic semiconductors

Carrier induced ferromagnetism in diluted III-V semi-conductor is analyzed within a two step approach. First, within a single site CPA formalism, we calculate the element resolved averaged Green's function of the itinerant carrier. Then using a generalized RKKY formula we evaluate the Mn-Mn long-range exchange integrals and the Curie temperature as a function of the exchange parameter, magnetic impurity concentration and carrier density. The effect of the disorder (impurity scattering) appears to play a crucial role. The standard RKKY calculation (no scattering processes), strongly underestimate the Curie temperature and is inappropriate to describe magnetism in diluted magnetic semi-conductors. It is also shown that an antiferromagnetic exchange favors higher Curie temperature.Comment: tex file + 4 .eps figures are included. submited to PR