Half-metallic diluted antiferromagnetic semiconductors

The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, Cr)--are discussed

Genetic studies on the behavioral traits of Drosophila Melanogaster

Thesis--University of Tsukuba, D.Sc.(A), no. 84, 1981. 3. 2

Coordination Dependence of Hyperfine Fields of 5sp Impurities on Ni Surfaces

We present first-principles calculations of the magnetic hyperfine fields H of 5sp impurities on the (001), (111), and (110) surfaces of Ni. We examine the dependence of H on the coordination number by placing the impurity in the surfaces, on top of them at the adatom positions, and in the bulk. We find a strong coordination dependence of H, different and characteristic for each impurity. The behavior is explained in terms of the on-site s-p hybridization as the symmetry is reduced at the surface. Our results are in agreement with recent experimental findings.Comment: 4 pages, 3 figure

The local magnetic moments and hyperfine magnetic fields in disordered metal-metalloid alloys

The local magnetic moments and hyperfine magnetic fields (HFF) in the ordered alloys Fe_{15}Sn and Fe_{15}Si are calculated with the first-principles full-potential linear augmented plane wave (FP LAPW) method. The results are compared with the experimental data on Fe-M (M=Si, Sn) disordered alloys at small metalloid concentration. The relaxation of the lattice around the impurity and its influence on the quantities under consideration are studied. The mechanism of the local magnetic moment formation is described. It is proved that the main distinction between these alloys is connected with the different lattice parameters. Three contributions to the HFF are discussed: the contributions of the core and valence electron polarization to the Fermi-contact part, and the contibution from the orbital magnetic moment.Comment: 3 pages, 3 figures, submitted to Phys. Rev.

Electronic structure, exchange interactions and Curie temperature in diluted III-V magnetic semiconductors: (GaCr)As, (GaMn)As, (GaFe)As

We complete our earlier (Phys. Rev. B, {\bf 66}, 134435 (2002)) study of the electronic structure, exchange interactions and Curie temperature in (GaMn)As and extend the study to two other diluted magnetic semiconductors (GaCr)As and (GaFe)As. Four concentrations of the 3d impurities are studied: 25%, 12.5%, 6.25%, 3.125%. (GaCr)As and (GaMn)As are found to possess a number of similar features. Both are semi-metallic and ferromagnetic, with similar properties of the interatomic exchange interactions and the same scale of the Curie temperature. In both systems the presence of the charge carriers is crucial for establishing the ferromagnetic order. An important difference between two systems is in the character of the dependence on the variation of the number of carriers. The ferromagnetism in (GaMn)As is found to be very sensitive to the presence of the donor defects, like As$_{\rm Ga}$ antisites. On the other hand, the Curie temperature of (GaCr)As depends rather weakly on the presence of this type of defects but decreases strongly with decreasing number of electrons. We find the exchange interactions between 3d atoms that make a major contribution into the ferromagnetism of (GaCr)As and (GaMn)As and propose an exchange path responsible for these interactions. The properties of (GaFe)As are found to differ crucially from the properties of (GaCr)As and (GaMn)As. (GaFe)As does not show a trend to ferromagnetism and is not half-metallic that makes this system unsuitable for the use in spintronic semiconductor devices

Noncollinear Ferromagnetism in (III,Mn)V Semiconductors

We investigate the stability of the collinear ferromagnetic state in kinetic exchange models for (III,Mn)V semiconductors with randomly distributed Mn ions >. Our results suggest that {\em noncollinear ferromagnetism} is commom to these semiconductor systems. The instability of the collinear state is due to long-ranged fluctuations invloving a large fraction of the localized magnetic moments. We address conditions that favor the occurrence of noncollinear groundstates and discuss unusual behavior that we predict for the temperature and field dependence of its saturation magnetization.Comment: 5 pages, one figure included, presentation of technical aspects simplified, version to appear in Phys. Rev. Let

Half-metallic Antiferromagnet BaCrFeAs2

First-principles calculations and a tight-binding analysis predict that the iron-pnictide BaCrFeAs2 is a promising candidate for half-metallic material with fully-compensated magnetization. The transition-metal ions Cr and Fe prefer the three-dimensional intervening lattice, which yields the antiferromagnetic order of spin orientations. Due to the difference between Cr and Fe in the electronegativity, a band gap is opened at the Fermi level in the spin channel in which Fe provides the majority carriers. The selective hybridization between 3d orbitals of Cr and As:4p states due to the peculiar lattice structure of the iron-pnictide is shown to be crucial for the novel properties.Comment: added reference

Carrier induced ferromagnetism in diluted magnetic semi-conductors

We present a theory for carrier induced ferromagnetism in diluted magnetic semi-conductor (DMS). Our approach treats on equal footing quantum fluctuations within the RPA approximation and disorder within CPA. This method allows for the calculation of $T_c$, magnetization and magnon spectrum as a function of hole, impurity concentration and temperature. It is shown that, sufficiently close to $T_c$, and within our decoupling scheme (Tyablicov type) the CPA for the itinerant electron gas reduces to the Virtual Crystal Approximation. This allows, in the low impurity concentration and low density of carriers to provide analytical expression for $T_c$. For illustration, we consider the case of $Ga_{1-c}Mn_{c}As$ and compare our results with available experimental data.Comment: 5 figures included. to appear in Phys. Rev. B (brief report

Water formation on bare grains: When the chemistry on dust impacts interstellar gas

Context. Water together with O2 are important gas phase ingredients to cool dense gas in order to form stars. On dust grains, H2 O is an important constituent of the icy mantle in which a complex chemistry is taking place, as revealed by hot core observations. The formation of water can occur on dust grain surfaces, and can impact gas phase composition. Aims. The formation of molecules such as OH, H2 O, HO2, H2 O2, as well as their deuterated forms and O2 and O3 is studied in order to assess how the chemistry varies in different astrophysical environments, and how the gas phase is affected by grain surface chemistry. Methods. We use Monte Carlo simulations to follow the formation of molecules on bare grains as well as the fraction of molecules released into the gas phase. We consider a surface reaction network, based on gas phase reactions, as well as UV photo-dissociation of the chemical species. Results. We show that grain surface chemistry has a strong impact on gas phase chemistry, and that this chemistry is very different for different dust grain temperatures. Low temperatures favor hydrogenation, while higher temperatures favor oxygenation. Also, UV photons dissociate the molecules on the surface, that can reform subsequently. The formation-destruction cycle increases the amount of species released into the gas phase. We also determine the time scales to form ices in diffuse and dense clouds, and show that ices are formed only in shielded environments, as supported by observations.Comment: Accepted in A&