Molecular Simulation of MoS2 Exfoliation.

A wide variety of two-dimensional layered materials are synthesized by liquid-phase exfoliation. Here we examine exfoliation of MoS2 into nanosheets in a mixture of water and isopropanol (IPA) containing cavitation bubbles. Using force fields optimized with experimental data on interfacial energies between MoS2 and the solvent, multimillion-atom molecular dynamics simulations are performed in conjunction with experiments to examine shock-induced collapse of cavitation bubbles and the resulting exfoliation of MoS2. The collapse of cavitation bubbles generates high-speed nanojets and shock waves in the solvent. Large shear stresses due to the nanojet impact on MoS2 surfaces initiate exfoliation, and shock waves reflected from MoS2 surfaces enhance exfoliation. Structural correlations in the solvent indicate that shock induces an ice VII like motif in the first solvation shell of water

Blue shifting of the A exciton peak in folded monolayer 1H-MoS2

The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene. In many cases these materials have shown a transition from an indirect bandgap in the bulk to a direct bandgap in monolayer systems. In this work we experimentally show that folding a 1H molybdenum disulphide (MoS2) layer results in a turbostratic stack with enhanced photoluminescence quantum yield and a significant shift to the blue by 90 meV. This is in contrast to the expected 2H-MoS2 band structure characteristics, which include an indirect gap and quenched photoluminescence. We present a theoretical explanation to the origin of this behavior in terms of exciton screening.Comment: 16 pages, 8 figure

Intrinsic carrier mobility of multi-layered MoS2_2 field-effect transistors on SiO2_2

By fabricating and characterizing multi-layered MoS$_2$-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility $\mu$ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration we observe mobilities as high as 125 cm$^2$V$^{-1}$s$^{-1}$ which is considerably smaller than 306.5 cm$^2$V$^{-1}$s$^{-1}$ as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS$_2$ on SiO$_2$ is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.Comment: 8 pages, 5 figures, typos fixed, and references update

Local charge transfer doping in suspended graphene nanojunctions

We report electronic transport measurements in nanoscale graphene transistors with gold and platinum electrodes whose channel lengths are shorter than 100 nm, and compare them with transistors with channel lengths from 1 \textmu{}m to 50 \textmu{}m. We find a large positive gate voltage shift in charge neutrality point (NP) for transistors made with platinum electrodes but negligible shift for devices made with gold electrodes. This is consistent with the transfer of electrons from graphene into the platinum electrodes. As the channel length increases, the disparity between the measured NP using gold and platinum electrodes disappears.Comment: 11 pages, 3 figures, to appear in Appl. Phys. Let

Glass Transition Temperature Depression at the Percolation Threshold in Carbon Nanotube-Epoxy Resin and Polypyrrole-Epoxy Resin Composites

The glass transition temperatures of conducting composites, obtained by blending carbon nanotubes (CNTs) or polypyrrole (PPy) particles with epoxy resin, were investigated by using both differential scanning calorimetry (DSC) and dynamical mechanical thermal analysis (DMTA). For both composites, dc and ac conductivity measurements revealed an electrical percolation threshold at which the glass transition temperature and mechanical modulus of the composites pass through a minimum

Anomalous insulator metal transition in boron nitride-graphene hybrid atomic layers

The study of two-dimensional (2D) electronic systems is of great fundamental significance in physics. Atomic layers containing hybridized domains of graphene and hexagonal boron nitride (h-BNC) constitute a new kind of disordered 2D electronic system. Magneto-electric transport measurements performed at low temperature in vapor phase synthesized h-BNC atomic layers show a clear and anomalous transition from an insulating to a metallic behavior upon cooling. The observed insulator to metal transition can be modulated by electron and hole doping and by the application of an external magnetic field. These results supported by ab-initio calculations suggest that this transition in h-BNC has distinctly different characteristics when compared to other 2D electron systems and is the result of the coexistence between two distinct mechanisms, namely, percolation through metallic graphene networks and hopping conduction between edge states on randomly distributed insulating h-BN domains.Comment: 9 pages, 15 figure