Minority Hole Mobility in n+ GaAs

The minority hole diffusivity, or equivalently the hole mobility, was measured in n+GaAs with the zero‐field time‐of‐flight technique. The minority hole mobility was measured for the donor doping range of 1.3×1017 cm−3 to 1.8×1018 cm−3 and was found to vary from 235 to 295 cm2/V s. At the lower doping level, the minority hole mobility is comparable to the corresponding majority hole mobility, but at 1.8×1018 cm−3 the minority hole mobility was 30% higher than the majority carrier hole mobility. These results have important implications for the design of devices such as solar cells and pnp‐heterojunction bipolar transistors

Recombination Lifetimes Using the RCPCD Technique: Comparison with Other Methods

The theory and operation of the resonance-coupled photoconductive decay (RCPCD) technique is described. Examples are presented of data measured on a wide variety of sample types. The RCPCD technique has been applied to a variety of wafer and thin-film materials. Using this technique, we can measure recombination lifetime over at least three decades of injection level. We can also measure relative values of minority-carrier mobility and diffusion length. By scanning the excitation wavelength, we can measure spectral response and photoconductive excitation spectra. Deep-level impurities have been detected by several variations of RCPCD

Microsecond Lifetimes and Low Interface Recombination Velocities in Moderately Doped n-GaAs Thin Films

We have observed lifetimes greater than 1 ps in moderately doped, thin film, n-GaAs/A1a,Gae,As double heterostructure membranes formed by etching away the substrate. We attribute these ultralong lifetimes to enhanced photon recycling caused by the removal of the substrate. Nonradiative recombination in the bulk and at the interfaces is very low; the upper limit of the interface recombination velocity is 25 cm/S.-Such long lifetimes in GaAs doped at N,= 1.3 X 10” cme3 suggest that thin-film solar cells offer a potential option for achieving very high efficiencies

Modeling Minority-Carrier Lifetime Techniques That Use Transient Excess-Carrier Decay: Preprint

Lifetime spectroscopy is a valuable tool for the characterization of PV materials. This paper combines modeling and experimental results to illustrate the injection-level dependent response of three transient excess-carrier decay techniques

Investigation of Deep Impurity Levels in CdTe/CdS Solar Cells

We have studied deep impurity levels of CdTe/CdS solar cells by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and time-resolved photoluminescence (TRPL)

Zero-Field Time-of-Flight Measurements of Electron Diffusion in P+-GaAs

Minority electron diffusivities in p+-GaAs-doped NA =~1.4×1018 and ~1019 cm-3 have been measured in zero-field conditions with an extension of the zero-field time-of-flight technique. Extension of the technique to make it applicable to heavily doped p+-GaAs is described and zero-field data are discussed. Unexpectedly, majority carrier drag effects are not evident in a comparison of this data with recently reported high-field data. Low zero-field mobility of electrons in p+-GaAs has important implications for high-speed devices such as heterojunction bipolar transistors

A study of minority carrier lifetime versus doping concentration in n‐type GaAs grown by metalorganic chemical vapor deposition

Time‐resolved photoluminescence decay measurements are used to explore minority carrier recombination in n‐type GaAs grown by metalorganic chemical vapor deposition, and doped with selenium to produce electron concentrations from 1.3×1017 cm−3 to 3.8×1018 cm−3. For electron densities n0\u3c1018 cm−3, the lifetime is found to be controlled by radiative recombination and photon recycling with no evidence of Shockley–Read–Hall recombination. For higher electron densities, samples show evidence of Shockley–Read–Hall recombination as reflected in the intensity dependence of the photoluminescence decay. Still, we find that radiative recombination and photon recycling are important for all electron concentrations studied, and no evidence for Auger recombination was observed

Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbon

Minority electron properties in p+‐GaAs doped with beryllium (Be) and with carbon (C) are reported. Measurements of essentially identical responses for structures differing only in dopant element demonstrate that the diffusivity (Dn) and the diffusion lengths (Ln) are the same in p+‐GaAs doped to ∼1019 cm−3 with Be‐ and C‐dopants. Zero‐field time‐of‐flight analysis yields Dn=35 cm2/s and internal quantum efficiency analysis yields Ln=2.4 μm, which implies a lifetime that is approximately at the estimated radiative limit. In addition, the majority Hall mobility was also found to be identical for the Be‐ and C‐doped material

The Spectral Energy Distribution of HH30 IRS: Constraining The Circumstellar Dust Size Distribution

We present spectral energy distribution (SED) models for the edge-on classical T Tauri star HH30 IRS that indicate dust grains have grown to larger than 50 microns within its circumstellar disk. The disk geometry and inclination are known from previous modeling of multiwavelength Hubble Space Telescope images and we use the SED to constrain the dust size distribution. Model spectra are shown for different circumstellar dust models: a standard ISM mixture and larger grain models. As compared to ISM grains, the larger dust grain models have a shallower wavelength dependent opacity. Models with the larger dust grains provide a good match to the currently available data, but mid and far-IR observations are required to more tightly constrain the dust size distribution. The accretion luminosity in our models is L_acc<0.2 L_star corresponding to an accretion rate of 4E-9M_sun/yr. Dust size distributions that are simple power-law extensions (i.e., no exponential cutoff) yield acceptable fits to the optical/near-IR but too much emission at mm wavelengths and require larger disk masses. Such a simple size distribution would not be expected in an environment such as the disk of HH30 IRS, particularly over such a large range in grain sizes. However, its ability to adequately characterize the grain populations may be determined from more complete observational sampling of the SED in the mid to far-IR.Comment: ApJ Accepte