The theory and operation of the resonance-coupled photoconductive decay (RCPCD) technique is described. Examples are presented of data measured on a wide variety of sample types. The RCPCD technique has been applied to a variety of wafer and thin-film materials. Using this technique, we can measure recombination lifetime over at least three decades of injection level. We can also measure relative values of minority-carrier mobility and diffusion length. By scanning the excitation wavelength, we can measure spectral response and photoconductive excitation spectra. Deep-level impurities have been detected by several variations of RCPCD
