Coherence of Spin Qubits in Silicon

Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control of electric fields and charge transport are required. Conventional semiconductor electronics is built upon these capabilities and has demonstrated scaling to large complicated arrays of interconnected devices. However, the requirements for a quantum computer are very different from those for classical computation, and it is not immediately obvious how best to build one in a semiconductor. One possible approach is to use spins as qubits: of nuclei, of electrons, or both in combination. Long qubit coherence times are a prerequisite for quantum computing, and in this paper we will discuss measurements of spin coherence in silicon. The results are encouraging - both electrons bound to donors and the donor nuclei exhibit low decoherence under the right circumstances. Doped silicon thus appears to pass the first test on the road to a quantum computer.Comment: Submitted to J Cond Matter on Nov 15th, 200

A systematic review of community participation measures for people with intellectual disabilities

Background: Community participation is considered a fundamental aspect of quality of life and one of the essential goals of services for people with intellectual disabilities (ID), yet there is no agreed way of measuring community participation. Method: Two systematic searches were performed across eight electronic databases to identify measures of community participation and identify validation studies for each measure. Measures were included if they were developed for adults with ID, measured extent of participation and had published information regarding content and psychometric properties. Each measure was evaluated on the basis of psychometric properties and in relation to coverage of nine domains of community participation from the International Classification of Functioning, Disability and Health (ICF). Results: Eleven measures were selected with the quality rating scores varying substantially ranging from 2-11 of a possible 16. Conclusions: The majority of measures were not sufficiently psychometrically tested. Findings suggest a need for the development of a psychometrically robust instrument

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass.Comment: 5 pages, 4 figures, 1 tabl

Influence of layer microstructure on the double nucleation process in Cu/Mg multilayers

9 páginas, 9 figuras, 3 tablas.-- et al.We have investigated by differential scanning calorimetry the thermal evolution of Cu/Mg multilayers with different modulation lengths, ranging from 7/28 to 30/120 nm. The Cu and Mg layers were grown by sequential evaporation in an electron beam deposition system. The phase identification and layer microstructure were determined by cross-section transmission electron microscopy, Rutherford backscattering, and scanning electron microscopy with focused ion beam for sample preparation. Upon heating, the intermetallic CuMg2 forms at the interfaces until coalescence is reached and thickens through a diffusion-limited process. Cross-section transmission electron microscopy observations show a distinct microstructure at the top and bottom of the as-prepared Mg layers, while no significant differences were seen in the Cu layers. We show that this effect is responsible for the observed asymmetry in the nucleation process between the Cu on Mg and the Mg on Cu interfaces. By modeling the calorimetric data we determine the role of both interfaces in the nucleation and lateral growth stages. We also show that vertical growth proceeds by grain development of the product phase, increasing significantly the roughness of the interfaces.The financial support by Project No. MAT2004-04761 granted by the Spanish Ministry of Education and 2005SGR00201 granted by the Direcció General de Recerca of the Generalitat of Catalonia is acknowledged. One of the authors (J.L.L.) acknowledges the financial support from the Hungarian National Science Fund (OTKA043437).Peer reviewe

Si in GaN -- On the Nature of the Background Donor

A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples

Flux-Line Lattice Structures in Untwinned YBa2Cu3O

A small angle neutron scattering study of the flux-line lattice in a large single crystal of untwinned YBa2Cu3O is presented. In fields parallel to the c-axis, diffraction spots are observed corresponding to four orientations of a hexagonal lattice, distorted by the a-b anisotropy. A value for the anisotropy, the penetration depth ratio, of 1.18(2) was obtained. The high quality of the data is such that second order diffraction is observed, indicating a well ordered FLL. With the field at 33 degrees to c a field dependent re-orientation of the lattice is observed around 3T.Comment: 4 pages, 4 figure