A 2-MS/s, 11.22 ENOB, extended input range SAR ADC with improved DNL and offset calculation

A 12-bit successive approximation register analog-to-digital converter (ADC) with extended input range is presented. Employing an input sampling scaling technique, the presented ADC can digitize the signals with an input range of 3.2 V pp-d (±1.33 V REF ). The circuit also includes a comparator offset compensation technique that results in a residual offset of less than 0.5 LSB. The chip has been designed and implemented in a 0.13-μm CMOS process and demonstrates the state-of-the-art performance, featuring an SNDR of 69.3 dB and the SFDR of 79 dB without requiring any calibration. Total power consumption of the ADC is 0.9 mW, with a measured differential non-linearity of 1.2/-1.0 LSB and INL of 2.3/-2.2 LSB

A 2-MS/s, 11.22 ENOB, extended input range SAR ADC with improved DNL and offset calculation

A 12-bit successive approximation register analog-to-digital converter (ADC) with extended input range is presented. Employing an input sampling scaling technique, the presented ADC can digitize the signals with an input range of 3.2 V pp-d (±1.33 V REF ). The circuit also includes a comparator offset compensation technique that results in a residual offset of less than 0.5 LSB. The chip has been designed and implemented in a 0.13-μm CMOS process and demonstrates the state-of-the-art performance, featuring an SNDR of 69.3 dB and the SFDR of 79 dB without requiring any calibration. Total power consumption of the ADC is 0.9 mW, with a measured differential non-linearity of 1.2/-1.0 LSB and INL of 2.3/-2.2 LSB

A 2-MS/s, 11.22 ENOB, extended input range SAR ADC with improved DNL and offset calculation

A 12-bit successive approximation register analog-to-digital converter (ADC) with extended input range is presented. Employing an input sampling scaling technique, the presented ADC can digitize the signals with an input range of 3.2 ± pp-d (pm 1.33~V{REF}). The circuit also includes a comparator offset compensation technique that results in a residual offset of less than 0.5 LSB. The chip has been designed and implemented in a 0.13-μ m CMOS process and demonstrates the state-of-the-art performance, featuring an SNDR of 69.3 dB and the SFDR of 79 dB without requiring any calibration. Total power consumption of the ADC is 0.9 mW, with a measured differential non-linearity of 1.2/-1.0 LSB and INL of 2.3/-2.2 LSB

Dynamic power reduction in digital pixel design for large format focal plane arrays

This paper presents a design and analytical approach to significantly reduce the dynamic power consumption of front-end pixel design for digital readout integrated circuits (DROICs) in digital pixel sensor (DPS) arrays. DPS architecture relies on coarse quantization with pulse frequency modulation (PFM) and a novel approach of extended integration incorporated to achieve lower noise. The design is fabricated in 90 nm CMOS process with pixel pitch of 30 µm. Proposed architecture can attain eminently high charge handling capacity of 2.2Ge- with a quantization noise of 1072e- and extremely low power dissipation of 14.28 mW. The proposed dynamic power reduction paradigm enables to alleviate the overall power consumption to 35% as compared to state-of- art PFM based 256×256 DPS array with the lowest Figure of Merit (FoM) of 297fJ/LSB reported earlier. The power reduction escalates further for higher detector currents and large format Focal Plane Arrays (FPA). The proposed design is tested and compared to our previous DROIC measurement results and other works in terms of power and quantization noise

Implementation of high-dynamic range pixel architecture for SWIR applications

This paper presents novel unit cell architecture for short wave infrared (SWIR) imaging applications. It has two input stages which are CTIA and SFD covering for both respectively low and high light, levels and automatic input stage selection circuitry that chooses best input stage. User can select 2 modes for FPA manual and automatic mode. In manual mode, user can set CTIA or SFD for all pixels according to user needs. In automatic mode, each pixel selects input stage itself according to light level. Light level threshold can be adjusted with reference voltage. Automatic input stage selection for each pixel brings high SNR level and low noise along with highest possible dynamic range for SWIR imaging applications. CMOS 0.18 mu m technology is used to realize unit cell. In the architecture of unit cell, circuit level techniques are used to optimize layout size

Implementation of pixel level digital TDI for scanning type LWIR FPAs

Implementation of a CMOS digital readout integrated circuit (DROIC) based on pixel level digital time delay integration (TDI) for scanning type LWIR focal plane arrays (FPAs) is presented. TDI is implemented on 8 pixels with over sampling rate of 3. Analog signal integrated on integration capacitor is converted to digital domain in pixel, and digital data is transferred to TDI summation counters, where contributions of 8 pixels are added. Output data is 16 bit, where 8 bits are allocated for most significant bits and 8 bits for least significant bits. Control block of the ROIC, which is responsible of generating timing diagram for switches controlling the pixels and summation counters, is realized with VerilogHDL. Summation counters and parallel-to-serial converter to convert 16 bit parallel output data to single bit output are also realized with Verilog HDL. Synthesized verilog netlists are placed&routed and combined with analog under-pixel part of the design. Quantization noise of analog-to-digital conversion is less than 500e-. Since analog signal is converted to digital domain in-pixel, inaccuracies due to analog signal routing over large chip area is eliminated. ROIC is fabricated with 0.18 mu m CMOS process and chip area is 10mm(2). Post-layout simulation results of the implemented design are presented. ROIC is programmable through serial or parallel interface. Input referred noise of ROIC is less than 750 rms electron, while power consumption is less than 30mW. ROIC is designed to perform in cryogenic temperatures