Open-access portal with hindcast wave data for Skåne and Halland

Wave climate data for the Swedish provinces Skane and Halland, were hindcast using SWAN, a third-generation spectral wave model. The 40-year wave dataset, from 1979 to 2019, is made available through an open-access data portal (https://gis.sgi.se/vagmodell/). The wave data has a three-hour resolution and includes significant wave height, peak wave period, and wave direction. The wave model domain encompasses the Baltic Sea, Öresund, Kattegat, and Skagerrak. Along the coast of Skane and Halland, the spatial resolution of the computational nodes, from which data can be extracted in the portal, is 250 m. In the offshore areas, the resolution of the computational grid is coarser. The simulated significant wave height was validated against observations from 25 wave gauges, operating intermittently during the simulation period. The coefficient of determination, R2, for these comparisons ranged from 0.46 to 0.93 for the different stations. For 15 wave gauges, R2 values for the comparisons exceeded 0.80. The wave model will continuously be updated and developed

Valence band of Ce2Co0.8Si3.2Ce_{2}Co_{0.8}Si_{3.2} and Ce2RhSi3Ce_{2}RhSi_{3} studied by resonant photoemission spectroscopy and FPLO calculations

This work presents studies of the valence band of two Kondo lattice systems: Ce2Co0.8Si3.2, which is paramagnetic with the Kondo temperature T-K approximate to 50 K and Ce2RhSi3, which is antiferromagnetic below T-N = 4.5 K and exhibits TK approximate to 9 K. The photoemission spectra, which are obtained with photon energy tuned to Ce - 4d 4f resonance, reveal a Kondo peak at the Fermi energy (E-F), its spin orbit splitting partner at 0.24 eV and a broad maximum related to Ce f(0) final state. The spectra indicate that Kondo peak has a higher intensity for Ce2Co0.8Si3.2. The off-resonance photoemission data reveal that a maximum in the 3d electron density of states is shifted towards EF for Ce2Co0.8Si3.2 as compared to Ce2RhSi3. Full-potential local-orbital calculations were realized with local spin density approach +U approach for 213 stoichiometry. They show that a higher density of states near EF is observed for Ce2CoSi3. The calculations also reveal the existing tendencies for antiferromagnetic and ferromagnetic ground states in a case of Ce2RhSi3 and Ce2CoSi3, respectively

Magnetic topological insulator MnBi6Te10 with zero-field ferromagnetic state and gapped Dirac surface states

Magnetic topological insulators (TIs) with nontrivial topological electronic structure and broken time-reversal symmetry exhibit various exotic topological quantum phenomena. The realization of such exotic phenomena at high temperature is one of central topics in this area. We reveal that MnBi6Te10 is a magnetic TI with an antiferromagnetic ground state below 10.8 K whose nontrivial topology is manifested by Dirac-like surface states. The ferromagnetic axion insulator state with Z4 = 2 emerges once spins polarized at field as low as 0.1 T, accompanied with saturated anomalous Hall resistivity up to 10 K. Such a ferromagnetic state is preserved even external field down to zero at 2 K. Theoretical calculations indicate that the few-layer ferromagnetic MnBi6Te10 is also topologically nontrivial with a non-zero Chern number. Angle-resolved photoemission spectroscopy experiments further reveal three types of Dirac surface states arising from different terminations on the cleavage surfaces, one of which has insulating behavior with an energy gap of ~ 28 meV at the Dirac point. These outstanding features suggest that MnBi6Te10 is a promising system to realize various topological quantum effects at zero field and high temperature.Comment: 18 pages, 4 figures and 1 tabl

Bone Tissue Response to Porous and Functionalized Titanium and Silica Based Coatings

Background: Topography and presence of bio-mimetic coatings are known to improve osseointegration. The objective of this study was to evaluate the bone regeneration potential of porous and osteogenic coatings. Methodology: Six-implants [Control (CTR); porous titanium coatings (T1, T2); thickened titanium (Ti) dioxide layer (TiO2); Amorphous Microporous Silica (AMS) and Bio-active Glass (BAG)] were implanted randomly in tibiae of 20-New Zealand white rabbits. The animals were sacrificed after 2 or 4 weeks. The samples were analyzed histologically and histomorphometrically. In the initial bone-free areas (bone regeneration areas (BRAs)), the bone area fraction (BAF) was evaluated in the whole cavity (500 mm, BAF-500), in the implant vicinity (100 mm, BAF-100) and further away (100–500 mm, BAF-400) from the implant. Bone-to-implant contact (BIC-BAA) was measured in the areas where the implants were installed in contact to the host bone (bone adaptation areas (BAAs)) to understand and compare the bone adaptation. Mixed models were used for statistical analysis. Principal Findings: After 2 weeks, the differences in BAF-500 for different surfaces were not significant (p.0.05). After 4 weeks, a higher BAF-500 was observed for BAG than CTR. BAF-100 for AMS was higher than BAG and BAF-400 for BAG was higher than CTR and AMS. For T1 and AMS, the bone regeneration was faster in the 100-mm compared to the 400-mm zone. BIC-BAA for AMS and BAG was lower after 4 than 2 weeks. After 4 weeks, BIC-BAA for BAG was lower than AMS and CTR. Conclusions: BAG is highly osteogenic at a distance from the implant. The porous titanium coatings didn’t stimulate bone regeneration but allowed bone growth into the pores. Although AMS didn’t stimulate higher bone response, it has a potential of faster bone growth in the vicinity compared to further away from the surface. BIC-BAA data were inconclusive to understand the bone adaptation.status: publishe

Synchrotron light based spectroscopy of MBE-grown (GaMn)As structures

Structures based on the diluted magnetic semiconductor (GaMn)As have been grown by low temperature molecular beam epitaxy and studied using synchrotron radiation based electron spectroscopy. An investigation of modifications due to in situ low temperature annealing under amorphous As capping has been performed. A clear accumulation of Mn is observed. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1x2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure. The good surface quality of the MnAs-terminated layer allows further epitaxial growth. As an example, it was possible to deposit a 3 ML thick MnBi film layer-by-layer. MnBi is particularly interesting in this context due to its predicted half-metal characteristics The GaAs/(GaMn)As interface has been studied with focus on the electrostatic properties. No band offset between the two systems was observed. The continuous transition is explained as an effect of electronic smearing of the atomically abrupt interface. Annealing induced diffusion of Mn interstitials through GaAs films grown on (GaMn)As during thermal treatment was also studied. It was found that GaAs layers thicker than 8 monolayers effectively hinder all Mn out diffusion. The effect was ascribed to the electrostatic potential barrier due to band bending in the GaAs film. Nanowires catalyzed by MnAs particles were studied using valence band photoemission with photon energies around the Mn2p threshold. It was found that with increasing nanowire length the resonant photoemission eventually dominated over the Auger decay channel. This was ascribed to dilution of Mn in the wires