Terahertz emission from lithium doped silicon under continuous wave interband optical excitation

We report on experimental observation and study of terahertz emission from lithium doped silicon crystals under continuous wave band-to-band optical excitation. It is shown that radiative transitions of electrons from 2P excited states of lithium donor to the 1S(A1) donor ground state prevail in the emission spectrum. The terahertz emission occurs due to capture of nonequilibrium electrons to charged donors, which in turn are generated in the crystal as a result of impurity assisted electron-hole recombination. Besides the intracentre radiative transitions the terahertz emission spectrum exhibits also features at about 12.7 and 15.27 meV, which could be related to intraexciton transitions and transitions from the continuum to the free exciton ground state

Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

This paper presents a brief overview of available experimental data on the characteristics of stimulated terahertz emission (4.9 – 6.4 THz) from optically excited neutral group V donors (phosphorus, antimony, arsenic and bismuth) in crystalline silicon subjected to uniaxial compressive strain along the [100] axis. Strain is shown to have a significant effect on the characteristics in question. Optimal strain depends on the dopant and may reduce the threshold pump intensity and improve lasing efficiency. We discuss possible mechanisms behind this effect and estimate the limiting output emission parameters

Relaxation of Coulomb States in semiconductors probed by FEL radiation

This article has no abstract

Search for the radiative decay η→π0γγ\eta \to \pi^0 \gamma \gamma in the SND experiment at VEPP-2M

The $\eta \to \pi^0 \gamma \gamma$ decay was investigated by the SND detector at VEPP-2M $e^+e^-$ collider in the reaction $e^+e^-\to\phi\to \eta\gamma$. Here we present the results and some details of this study. We report an upper limit (90% c.l.) $Br(\eta \to \pi^0 \gamma \gamma)<8.4\times 10^{-4}$ as our final result. Our upper limit does not contradict the earlier measurement by GAMS spectrometer. To facilitate future studies a rather detailed review of the problem is also given.Comment: 24 pages, 6 figures, LaTex. To be published in Nucl. Phys.

Stimulated terahertz emission due to electronic Raman scattering in silicon

Silicon-based semiconductors are intensively investigated over the past years as promising candidates for optoelectronic devices at terahertz (THz) frequencies [1]. Optically pumped intracenter silicon lasers, realized in the past decade in the THz range, are based on direct optical transitions between shallow levels of different shallow donors [2]. Recently, terahertz Raman laser emission has been demonstrated in silicon doped by antimony [3] and phosphorus [4]. We report on realization of terahertz lasers based on intracenter electronic Raman scattering in silicon doped by arsenic (Si:As, frequency range 4.8 – 5.1 THz and 5.9 – 6.5 THz) and silicon doped by bismuth (Si:Bi, 4.6 – 5.9 THz) under optical excitation by infrared frequency-tunable free electron laser at low lattice temperatures. The Stokes shift of the observed laser emission is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the excited 1s(E) donor states. Raman terahertz gain of the lasers is similar to those observed for the donor-type terahertz silicon donor lasers

Fast relaxation of free carriers in compensated n- and p-type germanium

The relaxation of free holes and electrons in highly compensated germanium doped by gallium (p-Ge:Ga:Sb) and antimony (n-Ge:Sb:Ga) has been studied by a pump-probe experiment with the free-electron laser FELBE at the Helmholtz-Zentrum Dresden-Rossendorf. The relaxation times vary between 20 ps and 300 ps and depend on the incident THz intensity and compensation level. The relaxation times are about five times shorter than previously obtained for uncompensated n-Ge:Sb and p-Ge:Ga. The results support the development of fast photoconductive detectors in the THz frequency range

Stimulated terahertz emission from arsenic donors in silicon

Stimulated emission has been obtained from intra-center donor transitions in silicon monocrystals doped by arsenic. The Si:As laser was optically excited by radiation from a CO2 laser. The emission spectrum consists of two lines corresponding to the 2p±-->1s(E) and 2p±-->1s(T2) intra-center arcenic transitions. The population inversion is formed due to fast 2s-->1s(A1) electron relaxation assisted by intervalley longitudinal acoustic f-phonon emission. This keeps the excited donor states below the 2p± state unpopulated. Thus population inversion occurs between the 2p± state and the 1s(E), 1s(T2) states

Time-resolved electronic capture in n-type germanium doped with antimony

The low temperature (T=5–40 K) capture of free electrons into hydrogenlike antimony centers in germanium has been studied by a time-resolving experiment using the free electron laser FELBE. The analysis of the pump-probe signal reveals a typical capture time of about 1.7 ns that decreases with pump energy to less than 1 ns while the number of ionized donors increases. The dependence on the pump-pulse energy is well described by an acoustic phonon-assisted capture process. In the cases when (i) a significant number of the electrons is in the conduction band (flux densities larger than 5× 1E25 photons/(cm2 s), (ii) the lattice temperature is above ~20 K, or (iii) a static electric field above ~2V/cm is applied to the crystal, the pump-probe technique reveals an additional intraband relaxation process with a characteristic time of ~100 ps, which is much shorter than that of the capture of free electrons into the antimony ground state

Towards a life-time-limited 8-octave-infrared photoconductive germanium detector

Ultrafast, ultra-broad-band photoconductive detector based on heavily doped and highly compensated germanium has been demonstrated. Such a material demonstrates optical sensitivity in the more than 8 octaves, in the infrared, from about 2 mm to about 8 μm. The spectral sensitivity peaks up between 2 THz and 2.5 THz and is slowly reduced towards lower and higher frequencies. The life times of free electrons/holes measured by a pump-probe technique approach a few tenths of picoseconds and remain almost independent on the optical input intensity and on the temperature of a detector in the operation range. During operation, a detector is cooled down to liquid helium temperature but has been approved to detect, with a reduced sensitivity, up to liquid nitrogen temperature. The response time is shorter than 200 ps that is significantly faster than previously reported times