Technology and market analysis of standard electronic photonic package

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.Includes bibliographical references (leaves 65-66).Electronic industry will suffer a major turn around in the near future. The current infrastructure will no longer be able to support the increasing data rates. All the disadvantages of copper as current legacy are amplified with the level of bandwidth we are going to experience soon. On the other hand, photonic industry is in the need of finding a new demand source to be able to bring back the state of industry to the "boom" era. With both conditions in mind, it is likely for photonic and electronic industry to emerge. However, the platform for the collaboration has not been mature enough. One of the biggest problems in the photonic industry is the high cost of the package. This, so far, has been one of the major issues holding the industry from gaining back to its golden era. In order to overcome this barrier, standardization has been suggested to be implemented in the industry. This thesis examines the current state of optoelectronic industry, as a convergence of photonic and electronic industry. More specifically, the condition of lack of standardization is analyzed and proven to be the case.(cont.) Interviewing relevant industry players and working closely with the MIT Communications Technology Roadmap-Integration, Packaging and Interconnects Technical Working Group also determine the reason of the condition. Finally, suggestions on the need of standard package and the requirement of standard package are made to hopefully direct the research towards more focused area. For the standard to be the ultimate standard, industry wide implementation has to be the resulting condition. This thesis also examines and suggests steps needed to be taken in order to promote the full implementation of the standard package.by Fatwa Firdaus Abdi.M.Eng

Releasing the Bubbles: Nanotopographical Electrocatalyst Design for Efficient Photoelectrochemical Hydrogen Production in Microgravity Environment

Photoelectrochemical devices integrate the processes of light absorption, charge separation, and catalysis for chemical synthesis. The monolithic design is interesting for space applications, where weight and volume constraints predominate. Hindered gas bubble desorption and the lack of macroconvection processes in reduced gravitation, however, limit its application in space. Physico-chemical modifications of the electrode surface are required to induce gas bubble desorption and ensure continuous device operation. A detailed investigation of the electrocatalyst nanostructure design for light-assisted hydrogen production in microgravity environment is described. p-InP coated with a rhodium (Rh) electrocatalyst layer fabricated by shadow nanosphere lithography is used as a model device. Rh is deposited via physical vapor deposition (PVD) or photoelectrodeposition through a mask of polystyrene (PS) particles. It is observed that the PS sphere size and electrocatalyst deposition technique alter the electrode surface wettability significantly, controlling hydrogen gas bubble detachment and photocurrent–voltage characteristics. The highest, most stable current density of 37.8 mA cm−2 is achieved by depositing Rh via PVD through 784 nm sized PS particles. The increased hydrophilicity of the photoelectrode results in small gas bubble contact angles and weak frictional forces at the solid–gas interface which cause enhanced gas bubble detachment and enhanced device efficiency

Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers

The photoelectrochemical properties of n-type Ga-polar GaN photoelectrodes covered with NiO layers of different thicknesses in the range 0–20 nm are investigated for aqueous solution. To obtain layers of well-defined thickness and high crystal quality, NiO is grown by plasma-assisted molecular-beam epitaxy. Stability tests reveal that the NiO layers suppress photocorrosion. With increasing NiO thickness, the onset of the photocurrent is shifted to more positive voltages and the photocurrent is reduced, especially for low bias potentials, indicating that hole transfer to the electrolyte interface is hindered by thicker NiO layers. Furthermore, cathodic transient spikes are observed under intermittent illumination, which hints at surface recombination processes. These results are inconsistent with the common explanation of the protection mechanism that the band alignment of GaN/NiO enables efficient hole-injection, thus preventing hole accumulation at the GaN surface that would lead to anodic photocorrosion. Interestingly, the morphology of the etch pits as well as further experiments involving the photodeposition of Ag indicate that photocorrosion of GaN photoanodes is related to reductive processes at threading dislocations. Therefore, it is concluded that the NiO layers block the transfer of photogenerated electrons from GaN to the electrolyte interface, which prevents the cathodic photocorrosion. © 2020 The Authors. Solar RRL published by Wiley-VCH Gmb

Nature of Nitrogen Incorporation in BiVO4 Photoanodes through Chemical and Physical Methods

In recent years, BiVO4 has been optimized as a photoanode material to produce photocurrent densities close to its theoretical maximum under AM1.5 solar illumination. Its performance is, therefore, limited by its 2.4 eV bandgap. Herein, nitrogen is incorporated into BiVO4 to shift the valence band position to higher energies and thereby decreases the bandgap. Two different approaches are investigated: modification of the precursors for the spray pyrolysis recipe and post-deposition nitrogen ion implantation. Both methods result in a slight red shift of the BiVO4 bandgap and optical absorption onset. Although previous reports on N-modified BiVO4 assumed individual nitrogen atoms to substitute for oxygen, X-ray photoelectron spectroscopy on the samples reveals the presence of molecular nitrogen (i.e., N-2). Density functional theory calculations confirm the thermodynamic stability of the incorporation and reveal that N-2 coordinates to two vanadium atoms in a bridging configuration. Unfortunately, nitrogen incorporation also results in the formation of a localized state of approximate to 0.1 eV below the conduction band minimum of BiVO4, which suppresses the photoactivity at longer wavelengths. These findings provide important new insights on the nature of nitrogen incorporation into BiVO4 and illustrate the need to find alternative lower-bandgap absorber materials for photoelectrochemical energy conversion applications

Efficient Water-Splitting Device Based on a Bismuth Vanadate Photoanode and Thin-Film Silicon Solar Cells

A hybrid photovoltaic/photoelectrochemical (PV/PEC) water-splitting device with a benchmark solar-to-hydrogen conversion efficiency of 5.2 % under simulated air mass (AM) 1.5 illumination is reported. This cell consists of a gradient-doped tungsten–bismuth vanadate (W:BiVO_4) photoanode and a thin-film silicon solar cell. The improvement with respect to an earlier cell that also used gradient-doped W:BiVO4 has been achieved by simultaneously introducing a textured substrate to enhance light trapping in the BiVO4 photoanode and further optimization of the W gradient doping profile in the photoanode. Various PV cells have been studied in combination with this BiVO_4 photoanode, such as an amorphous silicon (a-Si:H) single junction, an a-Si:H/a-Si:H double junction, and an a-Si:H/nanocrystalline silicon (nc-Si:H) micromorph junction. The highest conversion efficiency, which is also the record efficiency for metal oxide based water-splitting devices, is reached for a tandem system consisting of the optimized W:BiVO_4 photoanode and the micromorph (a-Si:H/nc-Si:H) cell. This record efficiency is attributed to the increased performance of the BiVO_4 photoanode, which is the limiting factor in this hybrid PEC/PV device, as well as better spectral matching between BiVO_4 and the nc-Si:H cell

Gradient dopant profiling and spectral utilization of monolithic thin-film silicon photoelectrochemical tandem devices for solar water splitting

A cost-effective and earth-abundant photocathode based on hydrogenated amorphous silicon carbide (a-SiC:H) is demonstrated to split water into hydrogen and oxygen using solar energy. A monolithic a-SiC:H photoelectrochemical (PEC) cathode integrated with a hydrogenated amorphous silicon (a-SiC:H)/nano-crystalline silicon (nc-Si:H) double photovoltaic (PV) junction achieved a current density of −5.1 mA cm^(−2) at 0 V versus the reversible hydrogen electrode. The a-SiC:H photocathode used no hydrogen-evolution catalyst and the high current density was obtained using gradient boron doping. The growth of high quality nc-Si:H PV junctions in combination with optimized spectral utilization was achieved using glass substrates with integrated micro-textured photonic structures. The performance of the PEC/PV cathode was analyzed by simulations using Advanced Semiconductor Analysis (ASA) software

Releasing the bubbles : nanotopographical electrocatalyst design for efficient photoelectrochemical hydrogen production in microgravity environment

Photoelectrochemical devices integrate the processes of light absorption, charge separation, and catalysis for chemical synthesis. The monolithic design is interesting for space applications, where weight and volume constraints predominate. Hindered gas bubble desorption and the lack of macroconvection processes in reduced gravitation, however, limit its application in space. Physico‐chemical modifications of the electrode surface are required to induce gas bubble desorption and ensure continuous device operation. A detailed investigation of the electrocatalyst nanostructure design for light‐assisted hydrogen production in microgravity environment is described. p‐InP coated with a rhodium (Rh) electrocatalyst layer fabricated by shadow nanosphere lithography is used as a model device. Rh is deposited via physical vapor deposition (PVD) or photoelectrodeposition through a mask of polystyrene (PS) particles. It is observed that the PS sphere size and electrocatalyst deposition technique alter the electrode surface wettability significantly, controlling hydrogen gas bubble detachment and photocurrent–voltage characteristics. The highest, most stable current density of 37.8 mA cm−2 is achieved by depositing Rh via PVD through 784 nm sized PS particles. The increased hydrophilicity of the photoelectrode results in small gas bubble contact angles and weak frictional forces at the solid–gas interface which cause enhanced gas bubble detachment and enhanced device efficiency