Theory of transient spectroscopy of multiple quantum well structures

A theory of the transient spectroscopy of quantum well (QW) structures under a large applied bias is presented. An analytical model of the initial part of the transient current is proposed. The time constant of the transient current depends not only on the emission rate from the QWs, as is usually assumed, but also on the subsequent carrier transport across QWs. Numerical simulation was used to confirm the validity of the proposed model, and to study the transient current on a larger time scale. It is shown that the transient current is influenced by the nonuniform distribution of the electric field and related effects, which results in a step-like behavior of the current. A procedure of extraction of the QW emission time from the transient spectroscopy experiments is suggested.Comment: 5 pages, 4 figures, to be published in J. Appl. Phy

Tunneling spin-galvanic effect

It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons, in particular the current changes its direction if the spin orientation changes the sign. Microscopic origin of such a 'tunneling spin-galvanic' effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wavevector of electrons.Comment: 3 pages, 2 figure

Capture of carriers to screened charged centres and low temperature shallow impurity electric field break down in semiconductors

Free carrier capture by a screened Coulomb potential in semiconductors are considered. It is established that with decreasing screening radius the capture cross section decreases drastically, and it goes to zero when $$. On the basis of this result a new mechanism of shallow impurity electric field break down in semiconductors is suggested.Comment: 8 pages, latex, 1 figure in gif format, to be submitted to "Journal of Condensed Matter

Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Tunneling ionization in high frequency fields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probability allows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between optical and thermal binding energy, and the basic structure of the defect adiabatic potentials. Compared to static fields, high frequency electric fields in the terahertz-range offer various advantages, as they can be applied contactlessly and homogeneously even to bulk samples using the intense radiation of a high power pulsed far-infrared laser. Furthermore, impurity ionization with terahertz radiation can be detected as photoconductive signal with a very high sensitivity in a wide range of electric field strengths

Mechanisms of regulation of invasive processes in phytoplankton on the example of the north-eastern part of the Black Sea

© 2016, Springer Science+Business Media Dordrecht. In the north-eastern part of the Black Sea, the seasonal complexes of dominant species of phytoplankton were fixed: small-celled diatom (spring), coccolithophores (late spring, early summer) and large diatoms (summer and autumn). In May–June 2005 and 2006, two invasive species of marine diatoms Chaetoceros throndsenii (maximal abundance 1.92 × 105 cells/l) and Chaetoceros minimus (1.6 × 105 cells/l) were recorded. These species have been incorporated in the complex of the late spring and early summer and grew simultaneously with the coccolithophore Emiliania huxleyi. The coccolithophore was dominant species, whose abundance had reached the level of a bloom. C. throndsenii was observed over the entire area from the coast to the centre of the sea; C. minimus were recorded at coastal stations and only at two stations of the open sea. Stratification of the water mass and the low (below the Redfield) ratio of nitrogen to phosphorus were observed at this time. Then, C. throndsenii was not marked even once, and C. minimus has been registered once on a shelf in June 2011. Experimental studies (2005) have shown that intensive growth C. throndsenii requires the simultaneous addition of nitrogen and phosphorus in a ratio close to the Redfield ratio. C. minimus shows the intensive growth only at high concentrations of phosphorus and at low nitrogen-to-phosphorus ratio (the experiment was carried out in June 2011). Mathematical modelling shows that C. throndsenii and Emiliania huxleyi form a stable couple whose growth is limited by different factors: the diatoms by nitrogen and the coccolithophores by phosphorus. C. minimus might not be able to form a stable couple with coccolithophores because they have the same limiting factor, i.e. phosphorus. However, this species could become the dominant one, if low (0.5–1) nitrogen-to-phosphorus ratio conditions were stable for more than 2 months. However, this scenario is improbable in natural circumstances since the existence of this complex seasonal rarely exceeds 1.5 months

Single-particle states in spherical Si/SiO2_2 quantum dots

We calculate ground and excited electron and hole levels in spherical Si quantum dots inside SiO$_2$ in a multiband effective mass approximation. Luttinger Hamiltonian is used for holes and the strong anisotropy of the conduction electron effective mass in Si is taken into account. As boundary conditions for electron and hole wave functions we use continuity of the wave functions and the velocity density at the boundary of the quantum dots.Comment: 8 pages, 5 figure

Sodium-Vanadium Bronze Na9V14O35: An Electrode Material for Na-Ion Batteries

Na9V14O35 (η-NaxV2O5) has been synthesized via solid-state reaction in an evacuated sealed silica ampoule and tested as electroactive material for Na-ion batteries. According to powder X-ray diffraction, electron diffraction and atomic resolution scanning transmission electron microscopy, Na9V14O35 adopts a monoclinic structure consisting of layers of corner- and edge-sharing VO5 tetragonal pyramids and VO4 tetrahedra with Na cations positioned between the layers, and can be considered as sodium vanadium(IV,V) oxovanadate Na9V104.1+O19(V5+O4)4. Behavior of Na9V14O35 as a positive and negative electrode in Na half-cells was investigated by galvanostatic cycling against metallic Na, synchrotron powder X-ray diffraction and electron energy loss spectroscopy. Being charged to 4.6 V vs. Na+/Na, almost 3 Na can be extracted per Na9V14O35 formula, resulting in electrochemical capacity of ~60 mAh g−1. Upon discharge below 1 V, Na9V14O35 uptakes sodium up to Na:V = 1:1 ratio that is accompanied by drastic elongation of the separation between the layers of the VO4 tetrahedra and VO5 tetragonal pyramids and volume increase of about 31%. Below 0.25 V, the ordered layered Na9V14O35 structure transforms into a rock-salt type disordered structure and ultimately into amorphous products of a conversion reaction at 0.1 V. The discharge capacity of 490 mAh g−1 delivered at first cycle due to the conversion reaction fades with the number of charge-discharge cycles

Temperature influence on the properties of thin Si₃N₄ films

Applying Raman spectroscopy, small-angle x-ray scattering, and atomic force microscopy it were studied phase composition and surface morphology of nanoscale films Si₃N₄ (obtained by RF magnetron sputtering

Anomalous electric conductions in KSbO3-type metallic rhenium oxides

Single crystals of KSbO3-type rhenium oxides, La4Re6O$19, Pb6Re6O19, Sr2Re3O9 and Bi3Re3O11, were synthesized by a hydrothermal method. Their crystal structures can be regarded as a network of three-dimensional orthogonal-dimer lattice of edge-shared ReO6 octahedra. All of them exhibit small magnitude of Pauli paramagnetism, indicating metallic electronic states without strong electron correlations. The resistivity of these rhenates, except Bi3Re3O11, have a temperature dependence of$rho(T)=\rho_{0}+AT^{n}$$(n \approx 1.6)$ in a wide temperature range between 5 K and 300 K, which is extraordinary for three-dimensional metals without strong electron correlations. The resistivity of Bi3Re3O11 shows an anomaly around at 50 K, where the magnetic susceptibility also detects a deviation from ordinary Pauli paramagnetism.Comment: 13 pages, 7 figures. J. Phys. Soc. Japan, in pres

Strong electron correlations in cobalt valence tautomers

We have examined cobalt based valence tautomer molecules such as Co(SQ)$_2$(phen) using density functional theory (DFT) and variational configuration interaction (VCI) approaches based upon a model Hamiltonian. Our DFT results extend earlier work by finding a reduced total energy gap (order 0.6 eV) between high temperature and low temperature states when we fully relax the coordinates (relative to experimental ones). Futhermore we demonstrate that the charge transfer picture based upon formal valence arguments succeeds qualitatively while failing quantitatively due to strong covalency between the Co 3$d$ orbitals and ligand $p$ orbitals. With the VCI approach, we argue that the high temperature, high spin phase is strongly mixed valent, with about 30 % admixture of Co(III) into the predominantly Co(II) ground state. We confirm this mixed valence through a fit to the XANES spectra. Moreover, the strong electron correlations of the mixed valent phase provide an energy lowering of about 0.2-0.3 eV of the high temperature phase relative to the low temperature one. Finally, we use the domain model to account for the extraordinarily large entropy and enthalpy values associated with the transition.Comment: 10 pages, 4 figures, submitted to J. Chem. Phy