Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device

Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device

Experimental observation of the optical spin transfer torque

The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven magnetization dynamics in magnetic nanostructures and plays an important role in the development of a new generation of memory devices and tunable oscillators. Optical excitations of magnetic systems by laser pulses have been a separate research field whose aim is to explore magnetization dynamics at short time scales and enable ultrafast spintronic devices. We report the experimental observation of the optical spin transfer torque, predicted theoretically several years ago building the bridge between these two fields of spintronics research. In a pump-and-probe optical experiment we measure coherent spin precession in a (Ga,Mn)As ferromagnetic semiconductor excited by circularly polarized laser pulses. During the pump pulse, the spin angular momentum of photo-carriers generated by the absorbed light is transferred to the collective magnetization of the ferromagnet. We interpret the observed optical spin transfer torque and the magnetization precession it triggers on a quantitative microscopic level. Bringing the spin transfer physics into optics introduces a fundamentally distinct mechanism from the previously reported thermal and non-thermal laser excitations of magnets. Bringing optics into the field of spin transfer torques decreases by several orders of magnitude the timescales at which these phenomena are explored and utilized.Comment: 11 pages, 4 figure

Deterministic control of magnetic vortex wall chirality by electric field

Concepts for information storage and logical processing based on magnetic domain walls have great potential for implementation in future information and communications technologies. To date, the need to apply power hungry magnetic fields or heat dissipating spin polarized currents to manipulate magnetic domain walls has limited the development of such technologies. The possibility of controlling magnetic domain walls using voltages offers an energy efficient route to overcome these limitations. Here we show that a voltage-induced uniaxial strain induces reversible deterministic switching of the chirality of a magnetic vortex wall. We discuss how this functionality will be applicable to schemes for information storage and logical processing, making a significant step towards the practical implementation of magnetic domain walls in energy efficient computing

Nonvolatile ferroelectric control of ferromagnetism in (Ga,Mn)As

There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus on composites coupled by magnetostrictive and piezoelectric strain transmitted across ferromagnetic-ferroelectric interfaces, but substrate clamping limits the response in the supported multilayer configuration favoured for devices. This constraint is avoided in a ferroelectric-ferromagnetic bilayer in which the magnetic response is modulated by the electric field of the poled ferroelectric. Here, we report the realization of such a device using a diluted magnetic semiconductor (DMS) channel and a polymer ferroelectric gate. Polarization reversal of the gate by a single voltage pulse results in a persistent modulation of the Curie temperature as large as 5%. The device demonstrates direct and quantitatively understood electric-fieldmediated coupling in a multiferroic bilayer and may provide new routes to nanostructured DMS materials and devices via ferroelectric domain nanopatterning. The successful implementation of a polymer-ferroelectric gate fieldeffect transistor (FeFET) with a DMS channel adds a new functionality to semiconductor spintronics and may be of importance for future low-voltage spintronics devices and memory structures.Comment: 19 pages, 5 figure

Piezo voltage controlled planar hall effect devices

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials

Origin of in-plane uniaxial magnetic anisotropy in CoFeB amorphous ferromagnetic thin -films

Describing the origin of uniaxial magnetic anisotropy (UMA) is generally problematic in systems other than single crystals. We demonstrate an in-plane UMA in amorphous CoFeB films on GaAs(001) which has the expected symmetry of the interface anisotropy in ferromagnetic films on GaAs(001), but strength which is independent of, rather than in inverse proportion to, the film thickness. We show that this volume UMA is consistent with a bond-orientational anisotropy, which propagates the interface-induced UMA through the thickness of the amorphous film. It is explained how, in general, this mechanism may describe the origin of in-plane UMAs in amorphous ferromagnetic films.Comment: 4 pages, 4 figure

Magnetism and carrier modulation in (Ga,Mn)As/organic-dye hybrid devices

We present the manipulation of magnetic and electrical properties of Ga,Mn As via the adsorption of dye-molecules as a step toward the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Curie temperature with a corresponding increase in electrical resistance and a higher coercive field is found for the Ga,Mn As/fluorescein system with respect to Ga,Mn As. Upon exposure to visible light a shift in Curie temperature toward higher values as well as a reduction of the electrical resistance and the coercive field can be achieved. This points toward a hole quenching effect at the molecule- Ga,Mn As interface which is susceptible to light exposure

Electrical transport of 2D electrons in non-uniform magnetic fields

We present a review of some of our recent experimental work on hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through magnetic barriers, periodic magnetic modulations, and random magnetic fields

Polarized x-ray spectroscopy of quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) thin films

X-ray magnetic circular dichroism (XMCD) is used to study the magnetic and electronic properties of the quaternary diluted magnetic semiconductor (Ga,Mn)(As,P) as a function of the P concentration y. A clear signature of the variation in strain, from compressive to tensile on increasing y, is observed in the angular dependence of the hybridized d(5)-like Mn L(2,3) XMCD spectra. The ferromagnetic transition temperature and magnetic moment per Mn ion both decrease steadily with increasing y. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609776