2,518 research outputs found

    Excited states of spherium

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    We report analytic solutions of a recently discovered quasi-exactly solvable model consisting of two electrons, interacting {\em via} a Coulomb potential, but restricted to remain on the surface of a D\mathcal{D}-dimensional sphere. Polynomial solutions are found for the ground state, and for some higher (L3L\le3) states. Kato cusp conditions and interdimensional degeneracies are discussed.Comment: 6 pages, 2 figures, to appear in Mol. Phy

    Accurate Parameter Extraction From Liquids Measured Using On-chip Terahertz Spectroscopy

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    We introduce a method for estimating the permittivity of liquid samples measured using integrated microfluidic/planar Goubau line terahertz waveguides, in which simulation results are incorporated with measurement data to enable accurate frequency-dependent analysis

    On-chip Terahertz Spectroscopy of Liquid Mixtures

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    We demonstrate 'through-substrate' sensing of fluids for application in the terahertz spectroscopy of biological materials. This technique employs planar Goubau lines with integrated photoconductive material, formed on a flexible, thin polyimide substrate, and bonded to a microfluidic channel. Few-picosecond pulses are used to probe liquid samples confined within the channel, over a total interaction length of 4 mm, overcoming water-absorption limitations of free-space terahertz transmission measurements

    Spatially Resolved On-Chip Picosecond Pulse Detection Using Graphene

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    We present an on-chip time domain terahertz (TD-THz) system in which picosecond pulses are generated in low-temperature-grown gallium arsenide (LT-GaAs) and detected in graphene. The detected pulses were found to vary in amplitude, full width at half maximum (FWHM), and DC offset when sampled optically at different locations along a 50-μm-long graphene photoconductive (PC) detector. The results demonstrate the importance of detection location and switch design in graphene-based on-chip PC detectors

    Investigation into free-space terahertz radiation from a LT-GaAs-on-quartz photoconductive emitter

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    We report on large-area photoconductive THz emitters and detectors with an LT-GaAs active region fabricated on quartz substrates using a lift-off transfer process. These devices are compared to the same LT-GaAs emitters when fabricated on the growth substrate. We find that the transferred devices show higher optical-to-THz conversion efficiencies and significantly larger breakdown fields

    Free-space terahertz radiation from a LT-GaAs-on-quartz large-area photoconductive emitter

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    We report on large-area photoconductive terahertz (THz) emitters with a low-temperature-grown GaAs (LT-GaAs) active layer fabricated on quartz substrates using a lift-off transfer process. These devices are compared to the same LT-GaAs emitters when fabricated on the growth substrate. We find that the transferred devices show higher optical-to-THz conversion efficiencies and significantly larger breakdown fields, which we attribute to reduced parasitic current in the substrate. Through these improvements, we demonstrate a factor of ~8 increase in emitted THz field strength at the maximum operating voltage. In addition we find improved performance when these devices are used for photoconductive detection, which we explain through a combination of reduced parasitic substrate currents and reduced space-charge build-up in the device
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