Optical properties of split ring resonator metamaterial structures on semiconductor substrates

Metamaterials based on single-layer metallic Split Ring Resonators (SRR) and Wires have been demonstrated to have a resonant response in the near infra-red wavelength range. The use of semiconductor substrates gives the potential for control of the resonant properties of split-ring resonator (SRR) structures by means of active changes in the carrier concentration obtained using either electrical injection or photo-excitation. We examine the influence of extended wires that are either parallel or perpendicular to the gap of the SRRs and report on an equivalent circuit model that provides an accurate method of determining the polarisation dependent resonant response for incident light perpendicular to the surface. Good agreement is obtained for the substantial shift observed in the position of the resonances when the planar metalisation is changed from gold to aluminium

Analysis of resonant responses of split ring resonators using conformal mapping techniques

We report a novel method for modeling the resonant frequency response of infra-red light, in the range of 2 to 10 microns, reflected from metallic spilt ring resonators (SRRs) fabricated on a silicon substrate. The calculated positions of the TM and TE peaks are determined from the plasma frequency associated with the filling fraction of the metal array and the equivalent LC circuit defined by the SRR elements. The capacitance of the equivalent circuit is calculated using conformal mapping techniques to determine the co-planar capacitance associated with both the individual and the neighbouring elements. The inductance of the equivalent circuit is based on the self-inductance of the individual elements and the mutual inductance of the neighboring elements. The results obtained from the method are in good agreement with experimental results and simulation results obtained from a commercial FDTD simulation software package. The method allows the frequency response of a SRR to be readily calculated without complex computational methods and enables new designs to be optimised for a particular frequency response by tuning the LC circuit

Characterisation at infrared wavelengths of metamaterials formed by thin-film metallic split-ring resonator arrays on silicon

The infrared reflectance spectra at normal incidence for split-ring resonator arrays fabricated in thin films of three different metals on a silicon substrate are reported. The results are compared with a finite difference time domain simulation of the structures and a simple and novel equivalent-circuit method for the calculation of the first and second resonant wavelengths

Increasing optical metamaterials functionality

Gold Split Ring Resonators (SRRs) were fabricated on silicon substrates by electron beam lithography and lift-off, with overall dimensions of approximately 200 nm. Reflectance spectra from the SRRs are similar to those published elsewhere. New devices are proposed based on the additional functionality afforded by the use of a silicon substrate

Improving the efficiency of fibre-chip grating couplers near 1310 nm

We present our recent work on fibre-chip grating couplers operating around 1310 nm. For the first time, we demonstrated the combination of dual-etch and apodization design approaches which can offer state of the art performance. Initial tests from fabricated structures show a -2.2dB loss

Mid-infrared Suspended Waveguide Platform and Building Blocks

In this work we present our recent progress in the development of a platform for the mid-infrared wavelength range, based on suspended silicon waveguide with subwavelength metamaterial cladding. The platform has some intrinsic advantages, which make it a very promising candidate for sensing applications in the fingerprint region. Specifically, it can cover the full transparency window of silicon (up to a wavelength of 8 μm), only requires one lithographic etch-step and can be designed for strong light-matter interaction. Design rules, practical aspects of the fabrication process and experimental results of a complete set of elemental building blocks operating at two very different wavelengths, 3.8 μm and 7.67 μm, will be discussed. Propagation losses as low as 0.82 dB/cm at λo=3.8 μm and 3.1 dB/cm at λo=7.67 μm are attained, for the interconnecting waveguides.Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech

Enhanced photoluminescence from photonic crystal-coated GaN LED wafers

This paper describes results of studies on photoluminescence from blue-emitting GaN LED wafers coated with a layer of synthetic opal photonic crystals. Commercial LED wafer material was used and samples were coated with thin films consisting of several layers of stacked spherical polystyrene balls. Various optical measurements were performed on these samples while they were excited with a 405 nm laser beam. Diffraction pattern due to the photonic crystal structure, showing the underlying six-fold symmetry, was recorded. The spectrum and angle-resolved intensity of photoluminescence were measured to understand the coupling of LED light with the grown photonic crystal structure on top of the wafer

Thermochromic effect in synthetic opal/polyaniline composite structures

The design and construction of a novel storage/indicator bilayer system is described where ammonia gas stored in a porous material can be used to dope a colour-changing polyaniline film. Both reversible and irreversible colour change effects are possible. A thin synthetic opal film is coupled to a polyaniline film in a parallel plate glass cell with ammonia gas adsorbed on the silica balls that form the opal structure. When heated and cooled, ammonia reversibly exchanges between the opal and polyaniline films causing a very distinct change in the colour of the polyaniline film. This thermochromic effect is also electrically detectable because of the large concomitant change in the resistivity of the polyaniline film that accompanies its colour chang

Surface passivation of nitride- and phosphide-based compound semiconductors

Results of surface passivation treatments on nitride and phosphide compound semiconductors are described. In order to assess why sulphur-based passivation treatments are not equally effective on all semiconductors we carried out sulphur passivation using both liquid phase and gas phase techniques and found that the former is more effective than the latter. An explanation in terms of surface ionicity is provided. The improvement as seen through the DC current gain of heterojunction bipolar transistors is described as is its temporal behaviour. Experiments with nitride semiconductors show that silicon nitride is more effective as a surface passivation than any type of sulphide treatment, for this family of semiconductors. The temporal behaviour of silicon nitride passivation on gallium nitride is described. Finally, the use of silicon nitride conformal films for topography-intensive devices has been demonstrated

Photonic crystal heterostructures from self-assembled opals

This paper describes the fabrication of opal-based photonic crystal heterostructures. These heterostructures were created by using multilayer deposition of silica and polystyrene spheres. The fabricated structures involved both different lattice constants and different dielectric constants. Single and double heterostructures working in the visible region were fabricated by using techniques described here. The optical properties of these heterostructures were investigated experimentally and showed the superposition of the properties of each individual crystal region as well as optical signatures due to inter-layer defects