4 research outputs found
Optical monitoring of technological processes for fabrication of thin-film nanostructures
Thisworkillustratesapplicationofthe uniquefiber-optic instrumentationforin situmonitoringofseveral
technologicalprocessescommonlyusedinfabricationof semiconducting
thin-film nanostructures. This instrumentation is basedonprinciplesoflowcoherenttandeminterferometry,
whichdetermineshighsensitivityandprecision in measuring
basic technological parameters, such as thickness of forming layers, temperature and
bending of the substrate.The probing wavelength = 1.55 m allows carrying out the
measurements on majority of substrates for semiconductor technology: Si, SOI, GaAs,
InP, GaP, Al2O3, diamond, ZrO2:Y. Monitoring of such processes as MOVPE,
MBEandplasmaetchingin various set-ups was realized. The absolute resolution achieved
in these experiments was limited only by calibration accuracy and corresponds to 1 at
sensitivity of 0.01 . The accuracy limit in estimating the thickness of layers during
their growth is 2 nm.
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