Electrical activity of carbon-hydrogen centers in Si

The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center

Croissance et caractérisations de structures silicium et silicium-germanium réalisées par MBE

AIX-MARSEILLE2-BU Sci.Luminy (130552106) / SudocSudocFranceF

GENERATION LIFETIME AND HOLD TIME OF SMALL MOS DEVICES

Une nouvelle méthode pour la caractérisation de transientes d'inversion dans des dispositifs métal-oxide-semiconducteur est reportée. L'utilisation de la Spectroscopie Isothermique des Transientes de Niveaux Profonds permet de séparer les courants de génération d'origines différentes. La combinaison de graphes d'activation avec des graphiques 'Zerbst' donne une caractérisation complète de dispositifs de dimensions allant jusqu'à moins d'un micromètre.A new method for characterising inversion transients in metal-oxide-semiconductor devices is reported. The technique uses Isothermal Deep Level Transient Spectroscopy to separate generation currents from various sources. The combination of activation graphs with Zerbst plots gives a complete characterisation of devices with dimensions down to sub-micron levels

VOn (n>3) defects in irradiated and heat-treated silicon

Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-related defects (VOn) in the temperature range 300-700°C in carbon-lean Cz-Si samples irradiated with MeV electrons or neutrons. New experimental data confirming an attribution of the absorption bands at 910, 976 and 1105 cm-1 to the VO3 complex are obtained. In particular, a correlated generation Of VO3 and the oxygen trimer is observed upon irradiation of CzSi crystals in the temperature range 300-400°C. Strong evidence for the assignment of the bands at 991 and 1014 cm-1 to a VO4 defect is presented. The lines are found to develop very efficiently in the VO2 containing materials enriched with the oxygen dimer. In such materials the formation of VO 4 is enhanced due to occurrence of the reaction O 2i+VO2 ⇒ VO4. Annealing of the VO 3 and VO4 defects at T > 550C °C is found to result in the appearance of new defects giving rise to a number of O-related LVM bands in the range 990-1110 cm-1. These bands are suggested to arise from VO5 and/or VO6 defects. Similar bands also appear upon the annihilation of oxygen-related thermal double donors at 650°C in Cz-Si crystals pre-annealed at 450°C