420 research outputs found

    NIR Microscopy Possibilities for the Visualization of Silicon Microelectronic Structure Topology through the Substrate

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    AbstractExperimental setup based on visible and NIR spectral range microscope with laser port and picosecond laser is developed for silicon integrated circuit (IC) failure analysis. The possibility of visualizing the topology of the submicron technology silicon structures from the back side of the crystal through the substrate is shown. Main features of new setup are demonstrated by some results of backside focused pulsed laser beam initiated latchup effect study. The possibility of the localization of the latchup sensitive areas under focused laser irradiation is shown. NIR light emission accompanying the latchup effect is observed and analyzed. The practical aspects of NIR microscopy for failure analysis under backside laser irradiation are discussed

    ДинамичСская нСлинСйная модСль распространСния ΠΈ измСнСния лингвистичСской ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΈ Π² индоСвропСйском модСльном языковом сообщСствС

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    The paper considers the nonlinear dynamic mathematical model describing the distribution and variation of linguistic information in the Indo-European linguistic community. When constructing a mathematical model of linguistic information propagation and changes in the linguistic community as a priori information data from independent studies both linguistics and other scientific fields, such as history, archeology and genetics were used. Within the framework of this model the spread of linguistic information in a model Indo-European language community, including at the initial stage of its formation was numerically studied. The preliminary results of theoretical analysis and computer simulation are given. It was found that the mathematical model of the distribution and modification of linguistic information shows both regular and typical chaotic behavior. As one of quantitative characteristics of considered nonlinear process of distribution of the linguistic information it is offered to consider number of arising cycles as number of the arisen modern languages, in the given language community. Results of computer modeling show, that from two main hypotheses of formation of the Proto-Indo-Europeans - Anatolian and Kurgan, the latter better matches temporary estimates obtained by us.Π’ Ρ€Π°Π±ΠΎΡ‚Π΅ рассмотрСна нСлинСйная динамичСская матСматичСская модСль, ΠΎΠΏΠΈΡΡ‹Π²Π°ΡŽΡ‰Π°Ρ распространСниС ΠΈ ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ лингвистичСской ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΈ Π² индоСвропСйском языковом сообщСствС. ΠŸΡ€ΠΈ построСнии матСматичСской ΠΌΠΎΠ΄Π΅Π»ΠΈ распространСния ΠΈ измСнСния лингвистичСской ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΈ Π² языковом сообщСствС Π² качСствС Π°ΠΏΡ€ΠΈΠΎΡ€Π½ΠΎΠΉ ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΈ использовали Π΄Π°Π½Π½Ρ‹Π΅ нСзависимых исслСдований, ΠΊΠ°ΠΊ ΠΈΠ· лингвистики, Ρ‚Π°ΠΊ ΠΈ ΠΈΠ· Π΄Ρ€ΡƒΠ³ΠΈΡ… Π½Π°ΡƒΡ‡Π½Ρ‹Ρ… областСй, Π½Π°ΠΏΡ€ΠΈΠΌΠ΅Ρ€, ΠΈΠ· истории, Π³Π΅Π½Π΅Ρ‚ΠΈΠΊΠΈ ΠΈ Π°Ρ€Ρ…Π΅ΠΎΠ»ΠΎΠ³ΠΈΠΈ. Π’ Ρ€Π°ΠΌΠΊΠ°Ρ… этой ΠΌΠΎΠ΄Π΅Π»ΠΈ Π±Ρ‹Π»ΠΎ ΠΏΡ€ΠΎΠ²Π΅Π΄Π΅Π½ΠΎ числСнноС исслСдованиС распространСния лингвистичСской ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΈ Π² Π½Π΅ΠΊΠΎΡ‚ΠΎΡ€ΠΎΠΌ модСльном индоСвропСйском языковом сообщСствС, Π² Ρ‚ΠΎΠΌ числС Π½Π° Π½Π°Ρ‡Π°Π»ΡŒΠ½ΠΎΠΌ этапС Π΅Π³ΠΎ формирования. Π”Π°Π½Ρ‹ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Ρ‹ ΠΏΡ€Π΅Π΄Π²Π°Ρ€ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ тСорСтичСского Π°Π½Π°Π»ΠΈΠ·Π° ΠΈ ΠΊΠΎΠΌΠΏΡŒΡŽΡ‚Π΅Ρ€Π½ΠΎΠ³ΠΎ модСлирования. УстановлСно, Ρ‡Ρ‚ΠΎ данная матСматичСская модСль процСсса распространСния ΠΈ измСнСния лингвистичСской ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΈ дСмонстрируСт ΠΊΠ°ΠΊ рСгулярноС, Ρ‚Π°ΠΊ ΠΈ Ρ‚ΠΈΠΏΠΈΡ‡Π½ΠΎ хаотичСскоС ΠΏΠΎΠ²Π΅Π΄Π΅Π½ΠΈΠ΅. Π’ качСствС ΠΎΠ΄Π½ΠΎΠΉ ΠΈΠ· количСствСнных характСристик рассматриваСмого Π½Π΅Π»ΠΈΠ½Π΅ΠΉΠ½ΠΎΠ³ΠΎ процСсса распространСния лингвистичСской ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΈ ΠΏΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½ΠΎ Ρ€Π°ΡΡΠΌΠ°Ρ‚Ρ€ΠΈΠ²Π°Ρ‚ΡŒ число Π²ΠΎΠ·Π½ΠΈΠΊΠ°ΡŽΡ‰ΠΈΡ… Ρ†ΠΈΠΊΠ»ΠΎΠ² Π² качСствС числа Π²ΠΎΠ·Π½ΠΈΠΊΡˆΠΈΡ… Π½ΠΎΠ²Ρ‹Ρ… языков Π² Π΄Π°Π½Π½ΠΎΠΌ языковом сообщСствС. Π Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Ρ‹ ΠΊΠΎΠΌΠΏΡŒΡŽΡ‚Π΅Ρ€Π½ΠΎΠ³ΠΎ модСлирования ΠΏΠΎΠΊΠ°Π·Ρ‹Π²Π°ΡŽΡ‚, Ρ‡Ρ‚ΠΎ ΠΈΠ· Π΄Π²ΡƒΡ… основных Π³ΠΈΠΏΠΎΡ‚Π΅Π· формирования ΠΏΡ€Π°ΠΈΠ½Π΄ΠΎΠ΅Π²Ρ€ΠΎΠΏΠ΅ΠΉΡ†Π΅Π² - Анатолийской ΠΈ ΠšΡƒΡ€Π³Π°Π½Π½ΠΎΠΉ - послСдняя Π»ΡƒΡ‡ΡˆΠ΅ соотвСтствуСт ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹ΠΌ Π½Π°ΠΌΠΈ Π²Ρ€Π΅ΠΌΠ΅Π½Π½Ρ‹ΠΌ ΠΎΡ†Π΅Π½ΠΊΠ°ΠΌ

    Волновая модСль распространСния ΠΈ измСнСния лингвистичСской ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΈ Π² индоСвропСйском модСльном языковом сообщСствС

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    Paper considers the wave mathematical model describing the distribution and change of linguistic information in Indo-European model linguistic community. Brief information about the Anatolian and Kurgan hypothesis of formation of Proto-Indo-Europeans (PIE) is given. The mathematical model of wave propagation and changing of information is described by system of integral-differential equations. Results of the preliminary theoretical analysis and computer modeling are given. In particular, an estimate of the maximum possible time (24000 years) of development/emergence of considered Indo-European β€œfamily” is obtained in the framework of this model. Results of computer modeling show, that from two main hypotheses of formation of the PIE - Anatolian and Kurgan, the latter better matches obtained by us temporary estimates. Finally, data on a hypothetical PIE alphabet - namely, the number of possible β€œcharacters/symbols” (or β€œletters”) alphabet of PIE on the basis of our data were obtained. Based on the results, it was found that the range of possible values for alphabetic characters is limited to about values: 3 32. In addition, there is a good correlation of our data with the findings of geneticists on a possible time of occurrence (14000-20000 years ago) of the haplogroup Y-DNA R1a (it is believed that PIE language speakers were primarily men with this haplogroup).Π’ Ρ€Π°Π±ΠΎΡ‚Π΅ рассмотрСна волновая матСматичСская модСль, ΠΎΠΏΠΈΡΡ‹Π²Π°ΡŽΡ‰Π°Ρ распространСниС ΠΈ ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ лингвистичСской ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΈ Π² индоСвропСйском модСльном языковом сообщСствС. Π”Π°Π½Π° краткая информация ΠΎΠ± анатолийской ΠΈ ΠΊΡƒΡ€Π³Π°Π½Π½ΠΎΠΉ Π³ΠΈΠΏΠΎΡ‚Π΅Π·Π°Ρ… формирования ΠΏΡ€Π°ΠΈΠ½Π΄ΠΎΠ΅Π²Ρ€ΠΎΠΏΠ΅ΠΉΡ†Π΅Π². ΠœΠ°Ρ‚Π΅ΠΌΠ°Ρ‚ΠΈΡ‡Π΅ΡΠΊΠ°Ρ модСль процСсса Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ³ΠΎ распространСния ΠΈ измСнСния ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΈ описываСтся систСмой ΠΈΠ½Ρ‚Π΅Π³Ρ€ΠΎ-Π΄ΠΈΡ„Ρ„Π΅Ρ€Π΅Π½Ρ†ΠΈΠ°Π»ΡŒΠ½Ρ‹Ρ… ΡƒΡ€Π°Π²Π½Π΅Π½ΠΈΠΉ. Π”Π°Π½Ρ‹ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Ρ‹ ΠΏΡ€Π΅Π΄Π²Π°Ρ€ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ тСорСтичСского Π°Π½Π°Π»ΠΈΠ·Π° ΠΈ ΠΊΠΎΠΌΠΏΡŒΡŽΡ‚Π΅Ρ€Π½ΠΎΠ³ΠΎ модСлирования. Π’ частности, ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π° ΠΎΡ†Π΅Π½ΠΊΠ° максимально Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΠ³ΠΎ Π²Ρ€Π΅ΠΌΠ΅Π½ΠΈ ( 24000 Π»Π΅Ρ‚) развития/возникновСния рассматриваСмой индоСвропСйской языковой «сСмьи» Π² Ρ€Π°ΠΌΠΊΠ°Ρ… Π΄Π°Π½Π½ΠΎΠΉ ΠΌΠΎΠ΄Π΅Π»ΠΈ. Π Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Ρ‹ ΠΊΠΎΠΌΠΏΡŒΡŽΡ‚Π΅Ρ€Π½ΠΎΠ³ΠΎ модСлирования ΠΏΠΎΠΊΠ°Π·Ρ‹Π²Π°ΡŽΡ‚, Ρ‡Ρ‚ΠΎ ΠΈΠ· Π΄Π²ΡƒΡ… основных Π³ΠΈΠΏΠΎΡ‚Π΅Π· формирования ΠΏΡ€Π°ΠΈΠ½Π΄ΠΎΠ΅Π²Ρ€ΠΎΠΏΠ΅ΠΉΡ†Π΅Π² - анатолийской ΠΈ ΠΊΡƒΡ€Π³Π°Π½Π½ΠΎΠΉ - послСдняя Π»ΡƒΡ‡ΡˆΠ΅ соотвСтствуСт ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹ΠΌ Π½Π°ΠΌΠΈ Π²Ρ€Π΅ΠΌΠ΅Π½Π½Ρ‹ΠΌ ΠΎΡ†Π΅Π½ΠΊΠ°ΠΌ. Π’ Π·Π°ΠΊΠ»ΡŽΡ‡Π΅Π½ΠΈΠ΅ ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Ρ‹ Π΄Π°Π½Π½Ρ‹Π΅ ΠΎ гипотСтичСском праиндоСвропСйском Π°Π»Ρ„Π°Π²ΠΈΡ‚Π΅, Π° ΠΈΠΌΠ΅Π½Π½ΠΎ - ΠΎ числС Π²ΠΎΠ·ΠΌΠΎΠΆΠ½Ρ‹Ρ… «символов/Π·Π½Π°ΠΊΠΎΠ²Β» (ΠΈΠ»ΠΈ Β«Π±ΡƒΠΊΠ²Β») Π°Π»Ρ„Π°Π²ΠΈΡ‚Π° ΠΏΡ€Π°ΠΈΠ½Π΄ΠΎΠ΅Π²Ρ€ΠΎΠΏΠ΅ΠΉΡ†Π΅Π² Π½Π° основании ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Ρ… Π½Π°ΠΌΠΈ Π΄Π°Π½Π½Ρ‹Ρ…. Π˜ΡΡ…ΠΎΠ΄Ρ ΠΈΠ· ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Ρ… Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚ΠΎΠ² установлСно, Ρ‡Ρ‚ΠΎ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½Ρ‹Ρ… Π·Π½Π°Ρ‡Π΅Π½ΠΈΠΉ для символов Π°Π»Ρ„Π°Π²ΠΈΡ‚Π° ΠΎΠ³Ρ€Π°Π½ΠΈΡ‡Π΅Π½ ΠΏΡ€ΠΈΠΌΠ΅Ρ€Π½ΠΎ значСниями: 3 32. ΠšΡ€ΠΎΠΌΠ΅ Ρ‚ΠΎΠ³ΠΎ, Π΅ΡΡ‚ΡŒ Ρ…ΠΎΡ€ΠΎΡˆΠ°Ρ коррСляция Π½Π°ΡˆΠΈΡ… Π΄Π°Π½Π½Ρ‹Ρ… с Π²Ρ‹Π²ΠΎΠ΄Π°ΠΌΠΈ Π³Π΅Π½Π΅Ρ‚ΠΈΠΊΠΎΠ² ΠΎ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΠΌ Π²Ρ€Π΅ΠΌΠ΅Π½ΠΈ появлСния (ΠΏΡ€ΠΈΠΌΠ΅Ρ€Π½ΠΎ 14000-20000 Π»Π΅Ρ‚ Π½Π°Π·Π°Π΄) Π³Π°ΠΏΠ»ΠΎΠ³Ρ€ΡƒΠΏΠΏΡ‹ Y-DNA R1a (считаСтся, Ρ‡Ρ‚ΠΎ носитСлями праиндоСвропСйских языков Π±Ρ‹Π»ΠΈ Π² ΠΏΠ΅Ρ€Π²ΡƒΡŽ ΠΎΡ‡Π΅Ρ€Π΅Π΄ΡŒ ΠΌΡƒΠΆΡ‡ΠΈΠ½Ρ‹ с Π΄Π°Π½Π½ΠΎΠΉ Π³Π°ΠΏΠ»ΠΎΠ³Ρ€ΡƒΠΏΠΏΠΎΠΉ)

    Π Π°Π·Ρ€Π°Π±ΠΎΡ‚ΠΊΠ° ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠ² ΠΈ Π°Π»Π³ΠΎΡ€ΠΈΡ‚ΠΌΠΎΠ² расчёта основных характСристик Ρ‚Ρ€Ρ‘Ρ…ΠΌΠ΅Ρ€Π½Ρ‹Ρ… нСрСгулярных ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎ-оптичСских Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄ΠΎΠ²

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    In the present paper the methods and algorithms permitting to calculate fields for various directed and radiant TE and TM modes of symmetrical and asymmetrical integrated-optical waveguides are presented. The description of the theoretical approaches and algorithm of calculation of the field of a scattered radiation outside of an irregular integrated-optical waveguide in the system of visual programming Delphi is given. The dispersion dependences for TE and TM modes in the trigonometric form, and appropriate pictures of fields of the radiation TE modes of the substrates and the pictures of fields of electromagnetic radiation scattered in an integrated-optical waveguide with three-dimensional irregularities are also given.Π’ Π΄Π°Π½Π½ΠΎΠΉ Ρ€Π°Π±ΠΎΡ‚Π΅ прСдставлСны ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ‹ ΠΈ Π°Π»Π³ΠΎΡ€ΠΈΡ‚ΠΌΡ‹, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‰ΠΈΠ΅ Ρ€Π°ΡΡΡ‡ΠΈΡ‚Ρ‹Π²Π°Ρ‚ΡŒ поля для Ρ€Π°Π·Π»ΠΈΡ‡Π½Ρ‹Ρ… направляСмых ΠΈ ΠΈΠ·Π»ΡƒΡ‡Π°Ρ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… Π’Π•- ΠΈ ВМ-ΠΌΠΎΠ΄ симмСтричных ΠΈ нСсиммСтричных ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎ-оптичСских Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄ΠΎΠ². Π”Π°Π½ΠΎ описаниС тСорСтичСских ΠΏΠΎΠ΄Ρ…ΠΎΠ΄ΠΎΠ² ΠΈ Π°Π»Π³ΠΎΡ€ΠΈΡ‚ΠΌΠ° расчёта поля рассСянного излучСния Π²Π½Π΅ нСрСгулярного ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎ-оптичСского Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π° Π² систСмС Π²ΠΈΠ·ΡƒΠ°Π»ΡŒΠ½ΠΎΠ³ΠΎ программирования Delphi. ΠŸΡ€ΠΈΠ²Π΅Π΄Π΅Π½Ρ‹ диспСрсионныС зависимости Π’Π•- ΠΈ ВМ-ΠΌΠΎΠ΄ рСгулярного ΠΏΠ»Π°Π½Π°Ρ€Π½ΠΎΠ³ΠΎ ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎ-оптичСского Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π°, Π³Ρ€Π°Ρ„ΠΈΠΊΠΈ ΠΏΠΎΠ»Π΅ΠΉ ΠΈΠ·Π»ΡƒΡ‡Π°Ρ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… Π’Π•-ΠΌΠΎΠ΄ ΠΏΠΎΠ΄Π»ΠΎΠΆΠΊΠΈ ΠΈ Π³Ρ€Π°Ρ„ΠΈΠΊΠΈ ΠΏΠΎΠ»Π΅ΠΉ элСктромагнитного излучСния рассСянного Π² нСрСгулярном Ρ‚Ρ€Ρ‘Ρ…ΠΌΠ΅Ρ€Π½ΠΎΠΌ ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎ-оптичСском Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π΅

    New Electron Conversion Lines from Existing ?-Transitions In 160dy

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    Three photo plates derived with spectrograph LNP JINR with constant magnetic field [1] have been investigated using the Microscope Automatic Scanning MAS [2]. Electron internal conversion (ICE) spectrograms of two erbium (Er P-2, Er P-8) and one Ho fractions has been measured. More detailed analysis gave us the possibility to obtain some new lines (see table) in addition to many earlier existing lines in 160Dy [3]. For that investigations it is necessary to increase the speed with which microscopic objects are measured are described. These efforts include the modernization of the MAS automatic scanning microscope and the development of programs to reach an initial point and for carrying out automatic point-to-point linear transitions with a specified step. The error in realizing a transition to a given point with specified coordinates is shown to amount to 1 Β΅m

    МодСль ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎ-оптичСской ΠΎΠ±ΠΎΠ±Ρ‰Ρ‘Π½Π½ΠΎΠΉ Π»ΠΈΠ½Π·Ρ‹ Π›ΡŽΠ½Π΅Π±Π΅Ρ€Π³Π° Π² Π½ΡƒΠ»Π΅Π²ΠΎΠΌ ΠΏΡ€ΠΈΠ±Π»ΠΈΠΆΠ΅Π½ΠΈΠΈ

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    The approximate solution of vector electrodynamics' problem in smoothly irregular four-layered integrated-optical waveguide is obtained. As a method of solution of the electrodynamics' problem in question, satisfying to a condition of a smooth modification of a profile of a researched integrated-optical structure, the asymptotic method is used. The represented outcomes of numerical modeling show good convergence of a solution of the considered problem in a zero approximation of the used asymptotic method with the results of other authors. The offered method is applicable to analysis of similar dielectric, magnetic, and meta-materials' structures, including nonlinear ones in sufficiently broad band of electromagnetic wavelengths, that is doubtless advantageous.ΠŸΠΎΠ»ΡƒΡ‡Π΅Π½ΠΎ ΠΏΡ€ΠΈΠ±Π»ΠΈΠΆΠ΅Π½Π½ΠΎΠ΅ аналитичСскоС Ρ€Π΅ΡˆΠ΅Π½ΠΈΠ΅ Π²Π΅ΠΊΡ‚ΠΎΡ€Π½ΠΎΠΉ элСктродинамичСской Π·Π°Π΄Π°Ρ‡ΠΈ Π² ΠΏΠ»Π°Π²Π½ΠΎ-нСрСгулярном чСтырёхслойном ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎ-оптичСском Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π΅. Π’ качСствС ΠΌΠ΅Ρ‚ΠΎΠ΄Π° Ρ€Π΅ΡˆΠ΅Π½ΠΈΡ поставлСнной элСктродинамичСской Π·Π°Π΄Π°Ρ‡ΠΈ, ΡƒΠ΄ΠΎΠ²Π»Π΅Ρ‚Π²ΠΎΡ€ΡΡŽΡ‰Π΅Π³ΠΎ ΡƒΡΠ»ΠΎΠ²ΠΈΡŽ ΠΏΠ»Π°Π²Π½ΠΎΠ³ΠΎ измСнСния профиля исслСдуСмой ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎ-оптичСской структуры, использован асимптотичСский ΠΌΠ΅Ρ‚ΠΎΠ΄. ΠŸΡ€Π΅Π΄ΡΡ‚Π°Π²Π»Π΅Π½Ρ‹ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Ρ‹ числСнного модСлирования, ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Π΅ Π΄Π΅ΠΌΠΎΠ½ΡΡ‚Ρ€ΠΈΡ€ΡƒΡŽΡ‚ высокоточноС совпадСниС Ρ€Π΅ΡˆΠ΅Π½ΠΈΡ поставлСнной Π·Π°Π΄Π°Ρ‡ΠΈ Π² Π½ΡƒΠ»Π΅Π²ΠΎΠΌ ΠΏΡ€ΠΈΠ±Π»ΠΈΠΆΠ΅Π½ΠΈΠΈ использованного асимптотичСского ΠΌΠ΅Ρ‚ΠΎΠ΄Π° с Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Π°ΠΌΠΈ Π΄Ρ€ΡƒΠ³ΠΈΡ… Π°Π²Ρ‚ΠΎΡ€ΠΎΠ². ΠŸΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½Π½Ρ‹ΠΉ Π² Ρ€Π°Π±ΠΎΡ‚Π΅ ΠΌΠ΅Ρ‚ΠΎΠ΄ исслСдования ΠΏΡ€ΠΈΠΌΠ΅Π½ΠΈΠΌ для Π°Π½Π°Π»ΠΈΠ·Π° Π°Π½Π°Π»ΠΎΠ³ΠΈΡ‡Π½Ρ‹Ρ… структур ΠΈΠ· диэлСктричСских, ΠΌΠ°Π³Π½ΠΈΡ‚Π½Ρ‹Ρ… ΠΈ ΠΌΠ΅Ρ‚Π°-ΠΌΠ°Ρ‚Π΅Ρ€ΠΈΠ°Π»ΠΎΠ², Π² Ρ‚ΠΎΠΌ числС ΠΈ Π½Π΅Π»ΠΈΠ½Π΅ΠΉΠ½Ρ‹Ρ… Π² достаточно ΡˆΠΈΡ€ΠΎΠΊΠΎΠΌ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π΅ элСктромагнитных Π΄Π»ΠΈΠ½ Π²ΠΎΠ»Π½, Ρ‡Ρ‚ΠΎ являСтся Π΅Π³ΠΎ Π΅Ρ‰Ρ‘ ΠΎΠ΄Π½ΠΈΠΌ нСсомнСнным прСимущСством

    Properties of nematic LC planar and smoothly-irregular waveguide structures: research in the experiment and using computer modeling

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    Nematic liquid crystal planar and smoothly-irregular waveguide structures were studied experimentally and by the computer modeling. Two types of optical smoothly-irregular waveguide structures promising for application in telecommunications and control systems are studied by numerical simulation: liquid crystal waveguides and thin film solid generalized waveguide Luneburg lens. Study of the behavior of these waveguide structures where liquid crystal layer can be used to control the properties of the entire device, of course, promising, especially since such devices are also able to perform various sensory functions when changing some external parameters, accompanied by a change in a number of their properties. It can be of interest to researchers not only in the field of the integrated optics but also in some others areas: nano-photonics, optofluidics, telecommunications, and control systems. The dependences of the attenuation coefficient (optical losses) of waveguide modes and the effective sizes (correlation radii) of quasi-stationary irregularities of the liquid-crystal layers on the linear laser radiation polarization and on the presence of pulse-periodic electric field were experimentally observed. An estimate was made of the correlation radii of liquid-crystal waveguide quasi-stationary irregularities. The obtained results are undoubtedly important for further research of waveguide liquid crystal layers, both from the theoretical point of view, and practical – in the organization and carrying out new experimental researches, for example, when developing promising integrated-optical LC sensors.The publication has been prepared with the support of the β€œRUDN University Program 5-100” (Sevastyanov L.A.) and funded by RFBR according to the research projects No. 18-07-00567, No. 18-51-18005 and No. 19-01-00645

    Characteristic calculation of directional coupler for accelerator high-power feeders

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    The calculation results of directional couplers with connection via the waveguide common narrow wall with a coupling factor of 3.0 decibels, directivity no less than 20 decibels, adjustment of coupling factor at 1 decibels are presented. The adjustment is carried out with the help of cylindrical plungers, moving inside of waveguides on the part of broad walls in the location of the connection slot, and prismatic plungers, moving in rectangular waveguides connected to narrow walls opposite to a slot of connection. The device as a magic tee with movable throttle pistons in Π•- and Н-plane arms permitting to match any load is designed too. The calculations are executed for devices operating at frequencies of 2.797 and 1.3 GHz

    Subcarrier Wave Quantum Key Distribution in Telecommunication Network with Bitrate 800 kbit/s

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    In the course of work on creating the first quantum communication network in Russia we demonstrated quantum key distribution in metropolitan optical network infrastructure. A single-pass subcarrier wave quantum cryptography scheme was used in the experiments. BB84 protocol with strong reference was chosen for performing key distribution. The registered sifted key rate in an optical cable with 1.5 dB loss was 800 Kbit/s. Signal visibility exceeded 98%, and quantum bit error rate value was 1%. The achieved result is a record for this type of systems

    Development of a pulsed bremsstrahlung source on a base of a nanosecond and microsecond REB accelerators

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    In the paper the preliminary results on measuring parameters of a pulsed bremsstrahlung source developed for investigation of physical-mechanical properties of reactor materials are given. Generation of Ξ³-radiation with parameters Ξ³ ∼ 0.4...1.0 MeV was carried out at microsecond and nanosecond high-current REB accelerators. The absolute values of an absorbed dose are determined for both nanosecond and microsecond sources of Ξ³-radiation.ΠŸΡ€ΠΈΠ²Π΅Π΄Π΅Π½ΠΎ ΠΏΠΎΠΏΠ΅Ρ€Π΅Π΄Π½Ρ– Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚ΠΈ ΠΏΠΎ Π²ΠΈΠΌΡ–Ρ€ΡŽΠ²Π°Π½Π½ΡŽ ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€Ρ–Π² Ρ–ΠΌΠΏΡƒΠ»ΡŒΡΠ½ΠΎΠ³ΠΎ Π΄ΠΆΠ΅Ρ€Π΅Π»Π° гальмованого Π²ΠΈΠΏΡ€ΠΎΠΌΡ–Π½ΡŽΠ²Π°Π½Π½Ρ, якій ΡΡ‚Π²ΠΎΡ€ΡŽΡ”Ρ‚ΡŒΡΡ для дослідТСння Ρ„Ρ–Π·ΠΈΠΊΠΎ-ΠΌΠ΅Ρ…Π°Π½Ρ–Ρ‡Π½ΠΈΡ… властивостСй ΠΌΠ°Ρ‚Π΅Ρ€Ρ–Π°Π»Ρ–Π² Ρ€Π΅Π°ΠΊΡ‚ΠΎΡ€ΠΎΠ±ΡƒΠ΄Ρ–Π²Π½ΠΈΡ†Ρ‚Π²Π°. ГСнСрація НЖР-Π²ΠΈΠΏΡ€ΠΎΠΌΡ–Π½ΡŽΠ²Π°Π½Π½Ρ Π· ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€Π°ΠΌΠΈ 0,4<Ξ³<1,0 ΠœΠ΅Π’ Π·Π΄Ρ–ΠΉΡΠ½ΡŽΠ²Π°Π»Π°ΡΡŒ мікросСкундному Ρ– наносСкундному ΡΠΈΠ»ΡŒΠ½ΠΎΡΡ‚Ρ€ΡƒΠΌΠΎΠ²ΠΈΡ… ΠΏΡ€ΠΈΡΠΊΠΎΡ€ΡŽΠ²Π°Ρ‡Π°Ρ… Π Π•ΠŸ. Π’ΠΈΠ·Π½Π°Ρ‡Π΅Π½Ρ– Π°Π±ΡΠΎΠ»ΡŽΡ‚Π½Ρ– значСння Π΄ΠΎΠ·ΠΈ поглинання, як для наносСкундного, Ρ‚Π°ΠΊ Ρ– мікросСкундного Π΄ΠΆΠ΅Ρ€Π΅Π» Ξ³-Π²ΠΈΠΏΡ€ΠΎΠΌΡ–Π½ΡŽΠ²Π°Π½Π½Ρ.ΠŸΡ€ΠΈΠ²Π΅Π΄Π΅Π½Ρ‹ ΠΏΡ€Π΅Π΄Π²Π°Ρ€ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹Π΅ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Ρ‹ ΠΏΠΎ измСрСниям ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€ΠΎΠ² ΠΈΠΌΠΏΡƒΠ»ΡŒΡΠ½ΠΎΠ³ΠΎ источника Ρ‚ΠΎΡ€ΠΌΠΎΠ·Π½ΠΎΠ³ΠΎ излучСния, создаваСмого для исслСдования Ρ„ΠΈΠ·ΠΈΠΊΠΎ-мСханичСских свойств ΠΌΠ°Ρ‚Π΅Ρ€ΠΈΠ°Π»ΠΎΠ² рСакторостроСния. ГСнСрация Π‘Π–Π  излучСния с ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€Π°ΠΌΠΈ 0,4<Ξ³<1,0 ΠœΡΠ’ ΠΎΡΡƒΡ‰Π΅ΡΡ‚Π²Π»ΡΠ»Π°ΡΡŒ Π½Π° микросСкундном ΠΈ наносСкундном ΡΠΈΠ»ΡŒΠ½ΠΎΡ‚ΠΎΡ‡Π½Ρ‹Ρ… ускоритСлях РЭП. ΠžΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½Ρ‹ Π°Π±ΡΠΎΠ»ΡŽΡ‚Π½Ρ‹Π΅ значСния ΠΏΠΎΠ³Π»ΠΎΡ‰Π΅Π½Π½ΠΎΠΉ Π΄ΠΎΠ·Ρ‹, ΠΊΠ°ΠΊ для наносСкундного Ρ‚Π°ΠΊ ΠΈ микросСкундного источников Ξ³-излучСния
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