Stable White Light Electroluminescence from Highly Flexible Polymer/ZnO Nanorods Hybrid Heterojunction Grown at 50°C

<p>Abstract</p> <p>Stable intrinsic white light&#8211;emitting diodes were fabricated from c-axially oriented ZnO nanorods (NRs) grown at 50&#176;C via the chemical bath deposition on top of a multi-layered poly(9,9-dioctylfluorene-co&#8211;<it>N</it>-(4-butylpheneylamine)diphenylamine)/poly(9,9dioctyl-fluorene) deposited on PEDOT:PSS on highly flexible plastic substrate. The low growth temperature enables the use of a variety of flexible plastic substrates. The fabricated flexible white light&#8211;emitting diode (FWLED) demonstrated good electrical properties and a single broad white emission peak extending from 420 nm and up to 800 nm combining the blue light emission of the polyflourene (PFO) polymer layer with the deep level emission (DLEs) of ZnO NRs. The influence of the temperature variations on the FWLED white emissions characteristics was studied and the devices exhibited high operation stability. Our results are promising for the development of white lighting sources using existing lighting glass bulbs, tubes, and armature technologies.</p

Light-emitting diodes based on n-ZnO nano-wires and p-type organic semiconductors

After our recent successful demonstration of high brightness white light emitting diodes (HB-LEDs) based on high temperature grown n-ZnO nanowires on different p-type semiconductors, we present here LEDs fabricated on n-ZnO nano-wires and p-type organic semiconductors. By employing a low temperature chemical growth (&les; 90 \ub0C) approach for ZnO synthesis combined together with organic p-type semiconductors, we demonstrate high quality LEDs fabricated on a variety of different substrates. The substrates include transparent glass, plastic, and conventional Si. Different multi-layers of p-type organic semiconductors with or without electron blocking layers have been demonstrated and characterized. The investigated p-type organic semiconductors include PEDOT:PSS, which was used as a anode in combination with other p-type polymers. Some of the heterojunction diodes also contain an electron blocking polymer sandwiched between the p-type polymer and the n-ZnO nano-wire. The insertion of electron blocking layer is necessary to engineer the device for the desired emission. Structural and electrical results will be presented. The preliminary I-V characteristics of the organic-inorganic hybrid heterojunction diodes show good rectifying properties. Finally we also present our findings on the origin of the green luminescence band which is responsible of the white light emission in ZnO is discussed