Concept of a laser-plasma based electron source for sub-10 fs electron diffraction

We propose a new concept of an electron source for ultrafast electron diffraction with sub-10~fs temporal resolution. Electrons are generated in a laser-plasma accelerator, able to deliver femtosecond electron bunches at 5 MeV energy with kHz repetition rate. The possibility of producing this electron source is demonstrated using Particle-In-Cell simulations. We then use particle tracking simulations to show that this electron beam can be transported and manipulated in a realistic beamline, in order to reach parameters suitable for electron diffraction. The beamline consists of realistic static magnetic optics and introduces no temporal jitter. We demonstrate numerically that electron bunches with 5~fs duration and containing 1.5~fC per bunch can be produced, with a transverse coherence length exceeding 2~nm, as required for electron diffraction

Current Induced Fingering Instability in Magnetic Domain Walls

The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient is found either to stabilize domains with walls perpendicular to current lines or to produce finger-like patterns, depending on the domain wall motion direction. The instability mechanism is shown to result from the non-adiabatic contribution of the spin transfer torque mechanism.Comment: 5 pages, 3 figures + supplementary material

Magnetic domain structure and dynamics in interacting ferromagnetic stacks with perpendicular anisotropy

The time and field dependence of the magnetic domain structure at magnetization reversal were investigated by Kerr microscopy in interacting ferromagnetic Co/Pt multilayers with perpendicular anisotropy. Large local inhomogeneous magnetostatic fields favor mirroring domain structures and domain decoration by rings of opposite magnetization. The long range nature of these magnetostatic interactions gives rise to ultra-slow dynamics even in zero applied field, i.e. it affects the long time domain stability. Due to this additionnal interaction field, the magnetization reversal under short magnetic field pulses differs markedly from the well-known slow dynamic behavior. Namely, in high field, the magnetization of the coupled harder layer has been observed to reverse more rapidly by domain wall motion than the softer layer alone.Comment: 42 pages including 17 figures. submitted to JA

Two-dimensional nanosecond electric field mapping based on cell electropermeabilization

Nanosecond, megavolt-per-meter electric pulses cause permeabilization of cells to small molecules, programmed cell death (apoptosis) in tumor cells, and are under evaluation as a treatment for skin cancer. We use nanoelectroporation and fluorescence imaging to construct two-dimensional maps of the electric field associated with delivery of 15 ns, 10 kV pulses to monolayers of the human prostate cancer cell line PC3 from three different electrode configurations: single-needle, five-needle, and flat-cut coaxial cable. Influx of the normally impermeant fluorescent dye YO-PRO-1 serves as a sensitive indicator of membrane permeabilization. The level of fluorescence emission after pulse exposure is proportional to the applied electric field strength. Spatial electric field distributions were compared in a plane normal to the center axis and 15-20 μm from the tip of the center electrode. Measurement results agree well with models for the three electrode arrangements evaluated in this study. This live-cell method for measuring a nanosecond pulsed electric field distribution provides an operationally meaningful calibration of electrode designs for biological applications and permits visualization of the relative sensitivities of different cell types to nanoelectropulse stimulation. PACS Codes: 87.85.M

Magnetic patterning of (Ga,Mn)As by hydrogen passivation

We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passivation on perpendicularly magnetized layers, the switching fields can be maintained closer to the continuous film coercivity, compared to dots made by usual dry etch techniques

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer