838 research outputs found

    Perturbative analysis of anharmonic chains of oscillators out of equilibrium

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    We compute the first-order correction to the correlation functions of the stationary state of a stochastically forced harmonic chain out of equilibrium when a small on-site anharmonic potential is added. This is achieved by deriving a suitable formula for the covariance matrix of the invariant state. We find that the first-order correction of the heat current does not depend on the size of the system. Second, the temperature profile is linear when the harmonic part of the on-site potential is zero. The sign of the gradient of the profile, however, is opposite to the sign of the temperature difference of the two heat baths.Comment: 26 pages, 2 figures, corrected typo

    Real-time Text Queries with Tunable Term Pair Indexes

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    Term proximity scoring is an established means in information retrieval for improving result quality of full-text queries. Integrating such proximity scores into efficient query processing, however, has not been equally well studied. Existing methods make use of precomputed lists of documents where tuples of terms, usually pairs, occur together, usually incurring a huge index size compared to term-only indexes. This paper introduces a joint framework for trading off index size and result quality, and provides optimization techniques for tuning precomputed indexes towards either maximal result quality or maximal query processing performance, given an upper bound for the index size. The framework allows to selectively materialize lists for pairs based on a query log to further reduce index size. Extensive experiments with two large text collections demonstrate runtime improvements of several orders of magnitude over existing text-based processing techniques with reasonable index sizes

    Normal Heat Conductivity in a strongly pinned chain of anharmonic oscillators

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    We consider a chain of coupled and strongly pinned anharmonic oscillators subject to a non-equilibrium random forcing. Assuming that the stationary state is approximately Gaussian, we first derive a stationary Boltzmann equation. By localizing the involved resonances, we next invert the linearized collision operator and compute the heat conductivity. In particular, we show that the Gaussian approximation yields a finite conductivity κ1λ2T2\kappa\sim\frac{1}{\lambda^2T^2}, for λ\lambda the anharmonic coupling strength.Comment: Introduction and conclusion modifie

    Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

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    A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighbouring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. We present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalability issues intrinsic to exchange-based two-qubit gates, as it does not rely on sub-nanometer precision in donor placement and is robust against noise in the control fields. We use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.Comment: Published version - more detailed discussions, robustness to dephasing pointed out additionall

    Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon

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    We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins

    Long Range Anticorrelations and Non-Gaussian Behavior of a Leaky Faucet

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    We find that intervals between successive drops from a leaky faucet display scale-invariant, long-range anticorrelations characterized by the same exponents of heart beat-to-beat intervals of healthy subjects. This behavior is also confirmed by numerical simulations on lattice and it is faucet-width- and flow-rate-independent. The histogram for the drop intervals is also well described by a L\'evy distribution with the same index for both histograms of healthy and diseased subjects. This additional result corroborates the evidence for similarities between leaky faucets and healthy hearts underlying dynamics.Comment: Self-extracting uuencoded postscript file. Phys.Rev.E (Rap.Comm.). Related papers can be found at http://www.if.uff.br/~tjpp/tjppe.htm

    Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

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    We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.Comment: 4 pages, 4 figure

    Stark shift and field ionization of arsenic donors in 28^{28}Si-SOI structures

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    We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28^{28}Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to \sim 2 V/μ\mum to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the 28^{28}Si SOI layer and find a contact hyperfine Stark parameter of ηa=1.9±0.2×103μ\eta_a=-1.9\pm0.2\times10^{-3} \mum2^2/V2^2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.Comment: 5 pages, 3 figure

    Distributed top-k aggregation queries at large

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    Top-k query processing is a fundamental building block for efficient ranking in a large number of applications. Efficiency is a central issue, especially for distributed settings, when the data is spread across different nodes in a network. This paper introduces novel optimization methods for top-k aggregation queries in such distributed environments. The optimizations can be applied to all algorithms that fall into the frameworks of the prior TPUT and KLEE methods. The optimizations address three degrees of freedom: 1) hierarchically grouping input lists into top-k operator trees and optimizing the tree structure, 2) computing data-adaptive scan depths for different input sources, and 3) data-adaptive sampling of a small subset of input sources in scenarios with hundreds or thousands of query-relevant network nodes. All optimizations are based on a statistical cost model that utilizes local synopses, e.g., in the form of histograms, efficiently computed convolutions, and estimators based on order statistics. The paper presents comprehensive experiments, with three different real-life datasets and using the ns-2 network simulator for a packet-level simulation of a large Internet-style network
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