X-ray polarimetry with an active-matrix pixel proportional counter

We report the first results from an X-ray polarimeter with a micropattern gas proportional counter using an amorphous silicon active matrix readout. With 100% polarized X-rays at 4.5 keV, we obtain a modulation factor of 0.33 +/- 0.03, confirming previous reports of the high polarization sensitivity of a finely segmented pixel proportional counter. The detector described here has a geometry suitable for the focal plane of an astronomical X-ray telescope. Amorphous silicon readout technology will enable additional extensions and improvements.Comment: 4 pages, 4 figures, 1 tabl

Intrinsic hole mobility and trapping in a regio-regular poly(thiophene)

The transport properties of high-performance thin-film transistors (TFT) made with a regio-regular poly(thiophene) semiconductor (PQT-12) are reported. The room-temperature field-effect mobility of the devices varied between 0.004 cm2/V s and 0.1 cm2/V s and was controlled through thermal processing of the material, which modified the structural order. The transport properties of TFTs were studied as a function of temperature. The field-effect mobility is thermally activated in all films at T<200 K and the activation energy depends on the charge density in the channel. The experimental data is compared to theoretical models for transport, and we argue that a model based on the existence of a mobility edge and an exponential distribution of traps provides the best interpretation of the data. The differences in room-temperature mobility are attributed to different widths of the shallow localized state distribution at the edge of the valence band due to structural disorder in the film. The free carrier mobility of the mobile states in the ordered regions of the film is the same in all structural modifications and is estimated to be between 1 and 4 cm2/V s.Comment: 20 pages, 8 figure

Multiple minimum coverings of Kn with copies of K4 - e

This paper is the last of a trilogy completely solving the maximum packing and minimum covering problems for the complete graph on n vertices, Kn, with copies of K4 - e, that is, the complete graph on four vertices with one edge missing

Hydrogen dynamics and light-induced structural changes in hydrogenated amorphous silicon

We use accurate first principles methods to study the network dynamics of hydrogenated amorphous silicon, including the motion of hydrogen. In addition to studies of atomic dynamics in the electronic ground state, we also adopt a simple procedure to track the H dynamics in light-excited states. Consistent with recent experiments and computer simulations, we find that dihydride structures are formed for dynamics in the light-excited states, and we give explicit examples of pathways to these states. Our simulations appear to be consistent with aspects of the Staebler-Wronski effect, such as the light-induced creation of well separated dangling bonds.Comment: 9 pages, 8 figures, submitted to PR

Recombination in polymer-fullerene bulk heterojunction solar cells

Recombination of photogenerated charge carriers in polymer bulk heterojunction (BHJ) solar cells reduces the short circuit current (Jsc) and the fill factor (FF). Identifying the mechanism of recombination is, therefore, fundamentally important for increasing the power conversion efficiency. Light intensity and temperature dependent current-voltage measurements on polymer BHJ cells made from a variety of different semiconducting polymers and fullerenes show that the recombination kinetics are voltage dependent and evolve from first order recombination at short circuit to bimolecular recombination at open circuit as a result of increasing the voltage-dependent charge carrier density in the cell. The "missing 0.3V" inferred from comparison of the band gaps of the bulk heterojunction materials and the measured open circuit voltage at room temperature results from the temperature dependence of the quasi-Fermi-levels in the polymer and fullerene domains - a conclusion based upon the fundamental statistics of Fermions.Comment: Accepted for publication in Physical Review B. http://prb.aps.org/accepted/B/6b07cO3aHe71bd1b149e1425e58bf2868cda2384d?ajax=1&height=500&width=50

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

We report first principles ab initio density functional calculations of hydrogen dynam- ics in hydrogenated amorphous silicon. Thermal motion of the host Si atoms drives H diffusion, as we demonstrate by direct simulation and explain with simple models. Si-Si bond centers and Si ring centers are local energy minima as expected. We also describe a new mechanism for break- ing Si-H bonds to release free atomic H into the network: a fluctuation bond center detachment (FBCD) assisted diffusion. H dynamics in a-Si:H is dominated by structural fluctuations intrinsic to the amorphous phase not present in the crystal.Comment: 4 pages, 5 figures, In press EPL (Jun. 2007

Higher Descent Data as a Homotopy Limit

We define the 2-groupoid of descent data assigned to a cosimplicial 2-groupoid and present it as the homotopy limit of the cosimplicial space gotten after applying the 2-nerve in each cosimplicial degree. This can be applied also to the case of $n$-groupoids thus providing an analogous presentation of "descent data" in higher dimensions.Comment: Appeared in JHR

The Value of Literacy Practices

The concepts of literacy events and practices have received considerable attention in educational research and policy. In comparison, the question of value, that is, ‘which literacy practices do people most value?’ has been neglected. With the current trend of cross-cultural adult literacy assessment, it is increasingly important to recognise locally valued literacy practices. In this paper we argue that measuring preferences and weighting of literacy practices provides an empirical and democratic basis for decisions in literacy assessment and curriculum development and could inform rapid educational adaptation to changes in the literacy environment. The paper examines the methodological basis for investigating literacy values and its potential to inform cross-cultural literacy assessments. The argument is illustrated with primary data from Mozambique. The correlation between individual values and respondents’ socio-economic and demographic characteristics is explored

Approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon with inner voids

We have performed an approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon (a-Si:H) using a molecular dynamics method. A 216 atom model for pure amorphous silicon (a-Si) has been employed as a starting point for our a-Si:H models with voids that were made by removing a cluster of silicon atoms out of the bulk and terminating the resulting dangling bonds with hydrogens. Our calculation shows that the presence of voids leads to localized low energy (30-50 cm^{-1}) states in the vibrational spectrum of the system. The nature and localization properties of these states are analyzed by various visualization techniques.Comment: 15 pages with 6 PS figures, to appear in PRB in December 199