Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when growing high-aluminum-content layers by this technique. Furthermore, Raman measurements show the quadratic variations of longitudinal optical phonon frequencies with aluminum concentration in good agreement with previous experimental results. In this work we show that high quality indirect-gap AlxGa1−xAs samples can be grown by LPE under near-equilibrium [email protected]

Sub-nanosecond Pulse Generation from a Two-section Laser-thyristor: Theoretical Analysis

We have developed a theoretical model of a two-section laser-thyristor. It is shown that using a 4 µm weakly doped p-base can increase blocking voltage up to 50 V, which makes it possible to generate 2 ns 10 A current pulses. It is demonstrated that the proposed device utilizes passive Q switching to generate high-power short optical pulses that account for up to 80% of output power. By picking the optimal passive section length, we have achieved optical pulses of ∼30 ps full width at half maximum (FWHM) and ∼100 W peak power.     Keywords: pulsed laser, semiconductor N-p-N-i-P heterostructure, laser-thyristor, dynamic model of pulsed lase

Low-temperature tapered-fiber probing of diamond NV ensembles coupled to GaP microcavities

In this work we present a platform for testing the device performance of a cavity-emitter system, using an ensemble of emitters and a tapered optical fiber. This method provides high-contrast spectra of the cavity modes, selective detection of emitters coupled to the cavity, and an estimate of the device performance in the single- emitter case. Using nitrogen-vacancy (NV) centers in diamond and a GaP optical microcavity, we are able to tune the cavity onto the NV resonance at 10 K, couple the cavity-coupled emission to a tapered fiber, and measure the fiber-coupled NV spontaneous emission decay. Theoretically we show that the fiber-coupled average Purcell factor is 2-3 times greater than that of free-space collection; although due to ensemble averaging it is still a factor of 3 less than the Purcell factor of a single, ideally placed center.Comment: 15 pages, 6 figure

High‐speed photoconductivity and infrared to visible up‐conversion in GaP light‐emitting diodes

In GaP:N (Zn,Te) light‐emitting diodes extrinsic photoconductivity and infrared to visible up‐conversion have been investigated by short laser pulses at 10‐μm wavelength. A time constant of the order of 1 ns was observed indicating that free infrared excited hole to bound donor recombination yields the fast response