The Kinetic Effects, Caused by Thickness Fluctuations of Quantum Semiconductor Wire

It was theoretically determined the electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness. We present the results for cases nondegenerate and generate statistics of carriers. The considered mechanism of relaxation of the carriers is essential for sufficiently thin and clean wire from the А3В5 and А4В6 type of semiconductors at low temperatures. The quantum size effects that are typical of quasi-one-dimensional systems were revealed.</span

Classical Size Effects in Films of n-PbTe

Based on kinetic Boltzmann equation the boundary problem of calculating the conductivity and Seebeck coefficient for a film with a rectangular cross section is solved. Mirror- diffuse mechanism of reflection of the charge carriers from the surfaces of the film is considered. Calculations were performed for different thicknesses nondegenerate semiconductor n-PbTe. A comparison of theoretical calculations with obtained experimental data for vapor-phase condensates based on PbTe is made.Keywords: classical size effects, thin film, lead telluride, thermoelectric properties.</p

The Influence of Surface on Scattering of Carriers and Kinetic Effects in n-PbTe Films

Based on the Fuchs-Sondheimer and Mayer models the influence of mechanisms of surface reflection of electrons on the experimental transport and thermoelectric properties of n-PbTe films on various substrates are substrates are considered. The thickness dependences of the Seebeck films based on PbTe are investigated. It is shown that for films on sital substrates mechanism of completely diffuse scattering of carriers (p≈0) are implemented and for the films obtained on fresh chips of mica chips – mixed specular-diffuse scattering mechanism of carriers (scattering coefficient p≈0,4).Keywords: size effect, thin film, lead telluride, thermoelectric properties.</p