945 research outputs found

    Growth of vertically aligned Si wire arrays over large areas (>1 cm^2) with Au and Cu catalysts

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    Arrays of vertically oriented Si wires with diameters of 1.5 µm and lengths of up to 75 µm were grown over areas >1 cm^2 by photolithographically patterning an oxide buffer layer, followed by vapor-liquid-solid growth with either Au or Cu as the growth catalyst. The pattern fidelity depended critically on the presence of the oxide layer, which prevented migration of the catalyst on the surface during annealing and in the early stages of wire growth. These arrays can be used as the absorber material in novel photovoltaic architectures and potentially in photonic crystals in which large areas are needed

    Secondary ion mass spectrometry of vapor−liquid−solid grown, Au-catalyzed, Si wires

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    Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCl_4 at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10^16 atoms/cm^3, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires

    Salt-assisted vapor-liquid-solid growth of one-dimensional van der Waals materials

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    We have combined the benefits of two catalytic growth phenomena to form nanostructures of transition metal trichalcogenides (TMTs), materials that are challenging to grow in a nanostructured form by conventional techniques, as required to exploit their exotic physics. Our growth strategy combines the benefits of vapor-liquid-solid (VLS) growth in controlling dimension and growth location, and salt-assisted growth for fast growth at moderate temperatures. This salt-assisted VLS growth is enabled through use of a catalyst that includes Au and an alkali metal halide. We demonstrate high yields of NbS3 1D nanostructures with sub-ten nanometer diameter, tens of micrometers length, and distinct 1D morphologies consisting of nanowires and nanoribbons with [010] and [100] growth orientations, respectively. We present strategies to control the growth location, size, and morphology. We extend the growth method to synthesize other TMTs, NbSe3 and TiS3, as nanowires. Finally, we discuss the growth mechanism based on the relationships we measure between the materials characteristics (growth orientation, morphology and dimensions) and the growth conditions (catalyst volume and growth time). Our study introduces opportunities to expand the library of emerging 1D vdW materials and their heterostructures with controllable nanoscale dimensions.Comment: 16 pages, 5 figure

    The pH-responsive PacC transcription factor of Aspergillus fumigatus governs epithelial entry and tissue invasion during pulmonary aspergillosis

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    Data Availability: The authors confirm that all data underlying the findings are fully available without restriction. Raw data have been deposited in the Gene Expression Omnibus (GEO) (http://www.ncbi.nlm.nih.gov/geo/) under accession number GSE54810. Funding: This work was supported in part by grants to EMB from the MRC (G0501164) and BBSRC (BB/G009619/1), to EMB and NDR from the Wellcome Trust (WT093596MA), to MB from Imperial College London (Division of Investigative Sciences PhD Studentship), to HH from the ERA-NET PathoGenoMics project TRANSPAT, Austrian Science Foundation (FWF I282-B09), to SGF from the National Institutes of Health, USA (R01AI073829). The funders had no role in study design, data collection and analysis, decision to publish, or preparation of the manuscript.Peer reviewedPublisher PD

    High Aspect Ratio Silicon Wire Array Photoelectrochemical Cells

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    In an effort to develop low-cost solar energy conversion techniques, high uniformity vertically oriented silicon wire arrays have been fabricated. These arrays, which allow for radial diffusion of minority charge carriers, have been measured in a photoelectrochemical cell. Large photovoltages (∼400 mV) have been measured, and these values are significantly greater than those obtained from the substrate alone. Additionally, the wire array samples displayed much higher current densities than the underlying substrate, demonstrating that significant energy conversion was occurring due to the absorption and charge-carrier transport in the vertically aligned Si wires. This method therefore represents a step toward the use of collection-limited semiconductor materials in a wire array format in macroscopic solar cell devices
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