Gymnemic acids inhibit hyphal growth and virulence in Candida albicans

Candida albicans is an opportunistic and polymorphic fungal pathogen that causes mucosal, disseminated and invasive infections in humans. Transition from the yeast form to the hyphal form is one of the key virulence factors in C. albicans contributing to macrophage evasion, tissue invasion and biofilm formation. Nontoxic small molecules that inhibit C. albicans yeast-to-hypha conversion and hyphal growth could represent a valuable source for understanding pathogenic fungal morphogenesis, identifying drug targets and serving as templates for the development of novel antifungal agents. Here, we have identified the triterpenoid saponin family of gymnemic acids (GAs) as inhibitor of C. albicans morphogenesis. GAs were isolated and purified from Gymnema sylvestre leaves, the Ayurvedic traditional medicinal plant used to treat diabetes. Purified GAs had no effect on the growth and viability of C. albicans yeast cells but inhibited its yeast-to-hypha conversion under several hypha-inducing conditions, including the presence of serum. Moreover, GAs promoted the conversion of C. albicans hyphae into yeast cells under hypha inducing conditions. They also inhibited conidial germination and hyphal growth of Aspergillus sp. Finally, GAs inhibited the formation of invasive hyphae from C. albicans-infected Caenorhabditis elegans worms and rescued them from killing by C. albicans. Hence, GAs could be useful for various antifungal applications due to their traditional use in herbal medicine

Influence of lexical semantics on product form

by Manasi A Kanetka

Role of short-term intensive activity as a precursor to design conceptualization

by Manasi A Kanetka

The Pattern Of Occlusive Arterial Disorders Affecting The Lower Extermities In India

N

Formation of diamond particulates by pulsed ruby laser irradiation of graphite immersed in benzene

Pulsed ruby laser irradiation of pyrolytic graphite surface under benzene is shown to lead to formation of diamond particulates. Use of the techniques of laser Raman spectroscopy, scanning electron microscopy and small angle x-ray diffraction has been made to establish the result. A model based on the notion of hydrodynamic sputtering is proposed to explain the process

Effects of nitrogen ion implantation on the mechanical properties of laser-deposited thin films of TiC and TiN on stainless steel

Thin films of TiC and TiN were deposited on type 304 stainless steel substrates using the pulsed-laser-induced physical vapour deposition technique. The films were irradiated with 100 keV nitrogen ions at various fluences. The structural differences between the as-deposited and nitrogen-ion-implanted samples were studied by small-angle X-ray diffraction. The surface hardness of the films was measured using the Vickers microhardness measurement technique. The wear characteristics of the samples were studied using a pin-on-disc wear-testing machine. Nitrogen ion implantation in the laser-deposited TiC and TiN was shown to improve the friction pin-on-disc wear-testing machine. Nitrogen ion implantation in the laser-deposited TiC and TiN was shown to improve the friction coefficient as well as the wear resistance of the stainless steel surface. Observations of scanning electron micrographs of the samples were used to confirm the better adhesion and the increase in the wear resistance of the nitrogen-implanted films compared with the as-deposited films