Heterogeneously integrated InGaAsSb detectors on SOI waveguide circuits for short

Abstract: We present evanescently coupl on silicon-on-insulator waveguide circuits for short responsivity of 0.13 A/W is obtained at a wavelength of 3.5 µA at -1V

Accurate strain measurements in highly strained Ge microbridges

Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression.Comment: 10 pages, 4 figure

Long-wavelength silicon photonic integrated circuits

status: publishe

The InAs/GaSb/InSb short-period superlattice: an active zone for mid-IR lasers

International audienc

InAs/GaSb/InSb short-period superlattice diode lasers emitting near 3.3 µm at room temperature

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Cycle de conception d’un laser à semi-conducteur pour la détection de gaz

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Nouveau laser moyen infra-rouge à super-réseaux InAs/GaSb pour une émission entre 3 et 4 µm

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