62 research outputs found
Heterogeneously integrated InGaAsSb detectors on SOI waveguide circuits for short
Abstract: We present evanescently coupl on silicon-on-insulator waveguide circuits for short responsivity of 0.13 A/W is obtained at a wavelength of 3.5 µA at -1V
Accurate strain measurements in highly strained Ge microbridges
Ge under high strain is predicted to become a direct bandgap semiconductor.
Very large deformations can be introduced using microbridge devices. However,
at the microscale, strain values are commonly deduced from Raman spectroscopy
using empirical linear models only established up to 1.2% for uniaxial stress.
In this work, we calibrate the Raman-strain relation at higher strain using
synchrotron based microdiffraction. The Ge microbridges show unprecedented high
tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift.
We demonstrate experimentally and theoretically that the Raman strain relation
is not linear and we provide a more accurate expression.Comment: 10 pages, 4 figure
Long-wavelength silicon photonic integrated circuits
status: publishe
The InAs/GaSb/InSb short-period superlattice: an active zone for mid-IR lasers
International audienc
InAs/GaSb/InSb short-period superlattice diode lasers emitting near 3.3 µm at room temperature
International audienc
Cycle de conception d’un laser à semi-conducteur pour la détection de gaz
International audienc
Nouveau laser moyen infra-rouge à super-réseaux InAs/GaSb pour une émission entre 3 et 4 µm
International audienc
- …